1,721,009 research outputs found
Linewidth and roughness measurement of SAOP by using FIB and planer-TEM as reference metrology
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Tensile strained GeSn on Si by solid phase epitaxy
No full textWe demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by solid phase epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to þ0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.sponsorship: R.R.L acknowledges support as Research Fellow of the Research Foundation-Flanders (FWO) and support for a short research stay at Lawrence Berkeley National Lab from FWO. This work was supported by the Research Foundation-Flanders (FWO), the Flemish Concerted Action (GOA/09/006 and GOA/13/011), and FP7-I3 project SPIRIT (Support of Public and Industrial Research Using Ion Beam Technology, Contract No. 227012). J.W.S. thanks the Belgian Hercules Stichting for their support in HER/08/25J. K. C. B. acknowledges support from the National Science Foundation under Contract No. DMR-0902179. The NIR transmission measurements were performed with funding by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE under Contract No. DE-AC02-05CH11231. J. Beeman is acknowledged for sample preparation. (Research Foundation-Flanders (FWO), FWO, Flemish Concerted Action|GOA/09/006, Flemish Concerted Action|GOA/13/011, FP7-I3 project SPIRIT (Support of Public and Industrial Research Using Ion Beam Technology)|227012, Belgian Hercules Stichting|HER/08/25J, National Science Foundation|DMR-0902179, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE|DE-AC02-05CH11231, Division Of Materials Research; Direct For Mathematical & Physical Scien|0902179)status: Publishe
Exploration of EUV-based self-aligned multipatterning (SAMP) options targeting pitches below 20 nm
No full textCharacterization of patterned porous dielectrics after plasma patterning and subsequent wet processing
No full textDevelopment of a Cu and W compatible PERR clean in BEOL advanced interconnect patterning
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Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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