1,720,996 research outputs found
The preventive anti-oxidant action of thiazolidinediones: a new therapeutic prospect in diabetes and insulin resistance.
No full text
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Constant and intermittent high glucose enhances endothelial cell apoptosis through mitochondrial superoxide overproduction.
No full textThe protective effect of rosuvastatin in human umbilical endothelial cells exposed to constant or intermittent high glucose.
No full textPrimary role of superoxide anion generation in the cascade of events leading to endothelial dysfunction and damage in high glucose treated HUVEC.
No full textPunch-through behaviour of FOXFET biased detectors
No full textThe voltage-current DC punch-through characteristics have been studied for FOXFETs with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping level. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation
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