1,721,091 research outputs found
On-Off Fluctuations of the Tunnel Current Before Breakdown of the Thin Oxide MOS Devices
No full textTCAD modeling of bias temperature instabilities in SiC MOSFETs
Full text linkTCAD simulations of SiC power MOSFETs have been performed to study the dependence of positive-bias temperature instability (PBTI) on temperature and electric field. The model used to describe the kinetics of the transition rates between neutral and charged traps is the extended Non-Radiative Multi Phonon (eNMP). Connections between oxide defect configurations at the interface with SiC substrate have been made. Validation against experiments is shown
BTI saturation and universal relaxation in SiC power MOSFETs
Full text linkThis work focuses on the positive bias temperature instability of SiC-based MOSFETs under different stress voltages and temperatures. Stress experiments demonstrate that the threshold voltage shift (∆Vth) does not follow a conventional power law for long stress time, but exhibits a saturating log- time dependence attributed to the charge trapping in the pre-existing defects at the SiC/SiO2 interface or in the SiO2 layer. The maximum Vth shift (∆Vmax), which is a function of the total trap density, increases with the stress voltage (Vstress) and decreases for temperatures higher than 50 °C. The time constant of the traps (τ0) also shows an uptrend with Vstress with a maximum value of around 50 °C. Moreover, the trap energy distribution (γ) slightly increases with temperature. The recovery analysis shows that an empiric universal relaxation function well describes the data with a dispersion parameter (β) that follows the Arrhenius law. Finally, the Vth recovery, after the same Vstress, is enhanced with temperature and also depicts a linear behavior on the Arrhenius plot. This indicates that the charge de-trapping process is thermally activated and explains the low degradation observed at high temperatures during the stress phase
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
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