1,720,973 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Reliability Investigations of MOSFETs using RF Small Signal Characterization
No full textModern technology needs and advancements have introduced various new concepts such as Internet-of-Things, electric automotive, and Artificial intelligence. This implies an increased activity in the electronics domain of analog and high frequency. Silicon devices have emerged as a cost-effective solution for such diverse applications. As these silicon devices are pushed towards higher performance, there is a continuous need to improve fabrication, power efficiency, variability, and reliability. Often, a direct trade-off of higher performance is observed in the reliability of semiconductor devices. The acceleration-based methodologies used for reliability assessment are the adequate time-saving solution for the lifetime's extrapolation but come with uncertainty in accuracy. Thus, the efforts to improve the accuracy of reliability characterization methodologies run in parallel. This study highlights two goals that can be achieved by incorporating high-frequency characterization into the reliability characteristics. The first one is assessing high-frequency performance throughout the device's lifetime to facilitate an accurate description of device/circuit functionality for high-frequency applications. Secondly, to explore the potential of high-frequency characterization as the means of scanning reliability effects within devices. S-parameters served as the high-frequency device's response and mapped onto a small-signal model to analyze different components of a fully depleted silicon-on-insulator MOSFET. The studied devices are subjected to two important DC stress patterns, i.e., Bias temperature instability stress and hot carrier stress. The hot carrier stress, which inherently suffers from the self-heating effect, resulted in the transistor's geometry-dependent magnitudes of hot carrier degradation. It is shown that the incorporation of the thermal resistance model is mandatory for the investigation of hot carrier degradation. The property of direct translation of small-signal parameter degradation to DC parameter degradation is used to develop a new S-parameter based bias temperature instability characterization methodology. The changes in gate-related small-signal capacitances after hot carrier stress reveals a distinct signature due to local change of flat-band voltage. The measured effects of gate-related small-signal capacitances post-stress are validated through transient physics-based simulations in Sentaurus TCAD.:Abstract
Symbols
Acronyms
1 Introduction
2 Fundamentals
2.1 MOSFETs Scaling Trends and Challenges
2.1.1 Silicon on Insulator Technology
2.1.2 FDSOI Technology
2.2 Reliability of Semiconductor Devices
2.3 RF Reliability
2.4 MOSFET Degradation Mechanisms
2.4.1 Hot Carrier Degradation
2.4.2 Bias Temperature Instability
2.5 Self-heating
3 RF Characterization of fully-depleted Silicon on Insulator devices
3.1 Scattering Parameters
3.2 S-parameters Measurement Flow
3.2.1 Calibration
3.2.2 De-embedding
3.3 Small-Signal Model
3.3.1 Model Parameters Extraction
3.3.2 Transistor Figures of Merit
3.4 Characterization Results
4 Self-heating assessment in Multi-finger Devices
4.1 Self-heating Characterization Methodology
4.1.1 Output Conductance Frequency dependence
4.1.2 Temperature dependence of Drain Current
4.2 Thermal Resistance Behavior
4.2.1 Thermal Resistance Scaling with number of fingers
4.2.2 Thermal Resistance Scaling with finger spacing
4.2.3 Thermal Resistance Scaling with GateWidth
4.2.4 Thermal Resistance Scaling with Gate length
4.3 Thermal Resistance Model
4.4 Design for Thermal Resistance Optimization
5 Bias Temperature Instability Investigation
5.1 Impact of Bias Temperature Instability stress on Device Metrics
5.1.1 Experimental Details
5.1.2 DC Parameters Drift
5.1.3 RF Small-Signal Parameters Drift
5.2 S-parameter based on-the-fly Bias Temperature Instability Characterization Method
5.2.1 Measurement Methodology
5.2.2 Results and Discussion
6 Investigation of Hot-carrier Degradation
6.1 Impact of Hot-carrier stress on Device performance
6.1.1 DC Metrics Degradation
6.1.2 Impact on small-signal Parameters
6.2 Implications of Self-heating on Hot-carrier Degradation in n-MOSFETs
6.2.1 Inclusion of Thermal resistance in Hot-carrier Degradation modeling
6.2.2 Convolution of Bias Temperature Instability component in Hot-carrier Degradation
6.2.3 Effect of Source and Drain Placement in Multi-finger Layout
6.3 Vth turn-around effect in p-MOSFET
7 Deconvolution of Hot-carrier Degradation and Bias Temperature Instability using Scattering parameters
7.1 Small-Signal Parameter Signatures for Hot-carrier Degradation and Bias Temperature Instability
7.2 TCAD Dynamic Simulation of Defects
7.2.1 Fixed Charges
7.2.2 Interface Traps near Gate
7.2.3 Interface Traps near Spacer Region
7.2.4 Combination of Traps
7.2.5 Drain Series Resistance effect
7.2.6 DVth Correction
7.3 Empirical Modeling based deconvolution of Hot-carrier Degradation
8 Conclusion and Recommendations
8.1 General Conclusions
8.2 Recommendations for Future Work
A Directly measured S-parameters and extracted Y-parameters
B Device Dimensions for Thermal Resistance Modeling
C Frequency response of hot-carrier degradation (HCD)
D Localization Effect of Interface Traps
Bibliograph
Reliability Investigations of MOSFETs using RF Small Signal Characterization
Get PDFModern technology needs and advancements have introduced various new concepts such as Internet-of-Things, electric automotive, and Artificial intelligence. This implies an increased activity in the electronics domain of analog and high frequency. Silicon devices have emerged as a cost-effective solution for such diverse applications. As these silicon devices are pushed towards higher performance, there is a continuous need to improve fabrication, power efficiency, variability, and reliability. Often, a direct trade-off of higher performance is observed in the reliability of semiconductor devices. The acceleration-based methodologies used for reliability assessment are the adequate time-saving solution for the lifetime's extrapolation but come with uncertainty in accuracy. Thus, the efforts to improve the accuracy of reliability characterization methodologies run in parallel. This study highlights two goals that can be achieved by incorporating high-frequency characterization into the reliability characteristics. The first one is assessing high-frequency performance throughout the device's lifetime to facilitate an accurate description of device/circuit functionality for high-frequency applications. Secondly, to explore the potential of high-frequency characterization as the means of scanning reliability effects within devices. S-parameters served as the high-frequency device's response and mapped onto a small-signal model to analyze different components of a fully depleted silicon-on-insulator MOSFET. The studied devices are subjected to two important DC stress patterns, i.e., Bias temperature instability stress and hot carrier stress. The hot carrier stress, which inherently suffers from the self-heating effect, resulted in the transistor's geometry-dependent magnitudes of hot carrier degradation. It is shown that the incorporation of the thermal resistance model is mandatory for the investigation of hot carrier degradation. The property of direct translation of small-signal parameter degradation to DC parameter degradation is used to develop a new S-parameter based bias temperature instability characterization methodology. The changes in gate-related small-signal capacitances after hot carrier stress reveals a distinct signature due to local change of flat-band voltage. The measured effects of gate-related small-signal capacitances post-stress are validated through transient physics-based simulations in Sentaurus TCAD.:Abstract
Symbols
Acronyms
1 Introduction
2 Fundamentals
2.1 MOSFETs Scaling Trends and Challenges
2.1.1 Silicon on Insulator Technology
2.1.2 FDSOI Technology
2.2 Reliability of Semiconductor Devices
2.3 RF Reliability
2.4 MOSFET Degradation Mechanisms
2.4.1 Hot Carrier Degradation
2.4.2 Bias Temperature Instability
2.5 Self-heating
3 RF Characterization of fully-depleted Silicon on Insulator devices
3.1 Scattering Parameters
3.2 S-parameters Measurement Flow
3.2.1 Calibration
3.2.2 De-embedding
3.3 Small-Signal Model
3.3.1 Model Parameters Extraction
3.3.2 Transistor Figures of Merit
3.4 Characterization Results
4 Self-heating assessment in Multi-finger Devices
4.1 Self-heating Characterization Methodology
4.1.1 Output Conductance Frequency dependence
4.1.2 Temperature dependence of Drain Current
4.2 Thermal Resistance Behavior
4.2.1 Thermal Resistance Scaling with number of fingers
4.2.2 Thermal Resistance Scaling with finger spacing
4.2.3 Thermal Resistance Scaling with GateWidth
4.2.4 Thermal Resistance Scaling with Gate length
4.3 Thermal Resistance Model
4.4 Design for Thermal Resistance Optimization
5 Bias Temperature Instability Investigation
5.1 Impact of Bias Temperature Instability stress on Device Metrics
5.1.1 Experimental Details
5.1.2 DC Parameters Drift
5.1.3 RF Small-Signal Parameters Drift
5.2 S-parameter based on-the-fly Bias Temperature Instability Characterization Method
5.2.1 Measurement Methodology
5.2.2 Results and Discussion
6 Investigation of Hot-carrier Degradation
6.1 Impact of Hot-carrier stress on Device performance
6.1.1 DC Metrics Degradation
6.1.2 Impact on small-signal Parameters
6.2 Implications of Self-heating on Hot-carrier Degradation in n-MOSFETs
6.2.1 Inclusion of Thermal resistance in Hot-carrier Degradation modeling
6.2.2 Convolution of Bias Temperature Instability component in Hot-carrier Degradation
6.2.3 Effect of Source and Drain Placement in Multi-finger Layout
6.3 Vth turn-around effect in p-MOSFET
7 Deconvolution of Hot-carrier Degradation and Bias Temperature Instability using Scattering parameters
7.1 Small-Signal Parameter Signatures for Hot-carrier Degradation and Bias Temperature Instability
7.2 TCAD Dynamic Simulation of Defects
7.2.1 Fixed Charges
7.2.2 Interface Traps near Gate
7.2.3 Interface Traps near Spacer Region
7.2.4 Combination of Traps
7.2.5 Drain Series Resistance effect
7.2.6 DVth Correction
7.3 Empirical Modeling based deconvolution of Hot-carrier Degradation
8 Conclusion and Recommendations
8.1 General Conclusions
8.2 Recommendations for Future Work
A Directly measured S-parameters and extracted Y-parameters
B Device Dimensions for Thermal Resistance Modeling
C Frequency response of hot-carrier degradation (HCD)
D Localization Effect of Interface Traps
Bibliograph
Reliability Investigations of MOSFETs using RF Small Signal Characterization
No full textModern technology needs and advancements have introduced various new concepts such as Internet-of-Things, electric automotive, and Artificial intelligence. This implies an increased activity in the electronics domain of analog and high frequency. Silicon devices have emerged as a cost-effective solution for such diverse applications. As these silicon devices are pushed towards higher performance, there is a continuous need to improve fabrication, power efficiency, variability, and reliability. Often, a direct trade-off of higher performance is observed in the reliability of semiconductor devices. The acceleration-based methodologies used for reliability assessment are the adequate time-saving solution for the lifetime's extrapolation but come with uncertainty in accuracy. Thus, the efforts to improve the accuracy of reliability characterization methodologies run in parallel. This study highlights two goals that can be achieved by incorporating high-frequency characterization into the reliability characteristics. The first one is assessing high-frequency performance throughout the device's lifetime to facilitate an accurate description of device/circuit functionality for high-frequency applications. Secondly, to explore the potential of high-frequency characterization as the means of scanning reliability effects within devices. S-parameters served as the high-frequency device's response and mapped onto a small-signal model to analyze different components of a fully depleted silicon-on-insulator MOSFET. The studied devices are subjected to two important DC stress patterns, i.e., Bias temperature instability stress and hot carrier stress. The hot carrier stress, which inherently suffers from the self-heating effect, resulted in the transistor's geometry-dependent magnitudes of hot carrier degradation. It is shown that the incorporation of the thermal resistance model is mandatory for the investigation of hot carrier degradation. The property of direct translation of small-signal parameter degradation to DC parameter degradation is used to develop a new S-parameter based bias temperature instability characterization methodology. The changes in gate-related small-signal capacitances after hot carrier stress reveals a distinct signature due to local change of flat-band voltage. The measured effects of gate-related small-signal capacitances post-stress are validated through transient physics-based simulations in Sentaurus TCAD.:Abstract
Symbols
Acronyms
1 Introduction
2 Fundamentals
2.1 MOSFETs Scaling Trends and Challenges
2.1.1 Silicon on Insulator Technology
2.1.2 FDSOI Technology
2.2 Reliability of Semiconductor Devices
2.3 RF Reliability
2.4 MOSFET Degradation Mechanisms
2.4.1 Hot Carrier Degradation
2.4.2 Bias Temperature Instability
2.5 Self-heating
3 RF Characterization of fully-depleted Silicon on Insulator devices
3.1 Scattering Parameters
3.2 S-parameters Measurement Flow
3.2.1 Calibration
3.2.2 De-embedding
3.3 Small-Signal Model
3.3.1 Model Parameters Extraction
3.3.2 Transistor Figures of Merit
3.4 Characterization Results
4 Self-heating assessment in Multi-finger Devices
4.1 Self-heating Characterization Methodology
4.1.1 Output Conductance Frequency dependence
4.1.2 Temperature dependence of Drain Current
4.2 Thermal Resistance Behavior
4.2.1 Thermal Resistance Scaling with number of fingers
4.2.2 Thermal Resistance Scaling with finger spacing
4.2.3 Thermal Resistance Scaling with GateWidth
4.2.4 Thermal Resistance Scaling with Gate length
4.3 Thermal Resistance Model
4.4 Design for Thermal Resistance Optimization
5 Bias Temperature Instability Investigation
5.1 Impact of Bias Temperature Instability stress on Device Metrics
5.1.1 Experimental Details
5.1.2 DC Parameters Drift
5.1.3 RF Small-Signal Parameters Drift
5.2 S-parameter based on-the-fly Bias Temperature Instability Characterization Method
5.2.1 Measurement Methodology
5.2.2 Results and Discussion
6 Investigation of Hot-carrier Degradation
6.1 Impact of Hot-carrier stress on Device performance
6.1.1 DC Metrics Degradation
6.1.2 Impact on small-signal Parameters
6.2 Implications of Self-heating on Hot-carrier Degradation in n-MOSFETs
6.2.1 Inclusion of Thermal resistance in Hot-carrier Degradation modeling
6.2.2 Convolution of Bias Temperature Instability component in Hot-carrier Degradation
6.2.3 Effect of Source and Drain Placement in Multi-finger Layout
6.3 Vth turn-around effect in p-MOSFET
7 Deconvolution of Hot-carrier Degradation and Bias Temperature Instability using Scattering parameters
7.1 Small-Signal Parameter Signatures for Hot-carrier Degradation and Bias Temperature Instability
7.2 TCAD Dynamic Simulation of Defects
7.2.1 Fixed Charges
7.2.2 Interface Traps near Gate
7.2.3 Interface Traps near Spacer Region
7.2.4 Combination of Traps
7.2.5 Drain Series Resistance effect
7.2.6 DVth Correction
7.3 Empirical Modeling based deconvolution of Hot-carrier Degradation
8 Conclusion and Recommendations
8.1 General Conclusions
8.2 Recommendations for Future Work
A Directly measured S-parameters and extracted Y-parameters
B Device Dimensions for Thermal Resistance Modeling
C Frequency response of hot-carrier degradation (HCD)
D Localization Effect of Interface Traps
Bibliograph
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
koamabayili/VECTRON-author-checklist: VECTRON author checklist
No full textWe have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
- …
