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    Temperature-mediated excitation of defect modes in a periodic structure at terahertz frequencies

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    The dependence on temperature of a defect mode of a periodic dielectric multilayer is studied in the terahertz range by using the characteristic matrix method. The structure analyzed is composed of alternating layers of silica and polymethylpentene. The material of the defect is the indium antimonide (InSb), which has a permittivity that is temperature dependent causing a blueshift of the defect mode as the temperature rises. Although at terahertz frequencies, the InSb is a dissipative material, choosing appropriately the thickness of the defect results in a defect mode with a transmittance that, throughout the range explored, always remains above 0.9 with a maximum of 0.9914

    Heuristic UTD Solutions for Plane Wave Diffraction by Uniaxial Chiral Half-Sheets

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    Heuristic solutions are provided to evaluate the diffraction by uniaxial chiral screens that are isolated or arranged in planar junctions. The optical axial direction of the chiral medium is perpendicular to the screen surfaces. Plane waves at skew incidence with respect to the discontinuity of the structure are considered and the proposed solutions are built in accordance with the uniform geometrical theory of diffraction by using the reflection and transmission matrices at the shadow boundaries for the reflected and incident/transmitted electric fields. Note that the importance of this research work relies on the absence of exact and approximate analytical solutions for the considered problems. Renowned commercial software is customized and expended to validate the results
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