74 research outputs found
LHC searches for heavy neutral Higgs bosons with a top jet substructure analysis
No full textPublished 17 May 2016We study the LHC searches for the heavy CP-odd Higgs boson A and CP-even Higgs boson H in the context of a general two-Higgs-doublet model. Specifically, we consider the decay mode of A/H→t¯t through the t¯t associated production channels. In the so-called “alignment limit” of the two-Higgs-doublet model, this decay mode can be the most dominant one. By employing the HEPTopTagger and the multivariate analysis method, we present the search sensitivities for both CP-odd Higgs boson A and CP-even Higgs boson H via this channel with multiple top quarks at the high-luminosity LHC runs.Ning Chen, Jinmian Li, and Yandong Li
A Study on Shortage of Nursing Staffs and Employment Security-An Empirical Study of Hangzhou City
No full textLHC searches for the CP-odd Higgs boson with a jet substructure analysis
No full textPublished 7 April 2015The LHC searches for the CP-odd Higgs boson A are studied (with masses from 300 GeV to 1 TeV) in the context of the general two-Higgs-doublet model. With the discovery of the 125 GeV Higgs boson at the LHC, we highlight one promising discovery channel of A→hZ. This channel can become significant for a heavy CP-odd Higgs boson after the global signal fitting to the 125 GeV Higgs boson in the general two-Higgs-doublet model. It is particularly interesting in the scenario where two CP-even Higgs bosons in the two-Higgs-doublet model have the common mass of 125 GeV. Since the final states involve a standard-model-like Higgs boson, we apply the jet substructure analysis of tagging the fat Higgs jet in order to eliminate the standard-model background sufficiently. After performing the kinematic cuts, we present the LHC search sensitivities for the CP-odd Higgs boson with mass up to 1 TeV via this channel.Ning Chen, Jinmian Li, Yandong Liu, and Zuowei Li
Notice of Violation of IEEE Publication Principles: An Adaptive Index-Based Algorithm Using Time-Coordination in Mobile Computing
No full textMethod for direct characterizing interface traps in STI-type high voltage SOI LDMOSFETs
No full textBased on the forward gated diode recombination current, a method for direct characterizing interface traps in 60V STI lateral high voltage SOI MOSFETs was proposed. Thus the interface traps induced by off-state or hot carrier stresses can be directly located by distinct peaks in the forward gated diode recombination current. The method was also investigated by 2D device simulation and reliability experiments.Engineering, Electrical & ElectronicPhysics, AppliedEICPCI-S(ISTP)
Experimental Insights on the Degradation and Recovery of pMOSFET under non-uniform NBTI Stresses
No full textA detail experimental study on the reliability degradation of pMOSFET under non-uniform NBTI stress was conducted. The relationship of drain bias under non-uniform NBTI stress was obtained and a turning curve was found. The non-uniform stress induced degradation can be separated into two different region based on the drain bias dependency, and the model for each region was developed and evaluated under various voltage and temperature. In addition, the conventional and enhanced NBTI stress demonstrated reverse temperature dependency. The non-uniform NBTI stress exhibited much lower recovery level, and its acceleration factor was similar to pure NBTI stress. From the temperature and voltage acceleration point of view, our results show that the non-uniform NBTI stress becomes the worst reliability corner for pMOSFETs with ultra thin gate oxynitride. The NBTI degradation with nominal drain bias was proposed to become as a device lifetime monitor for pMOSFETs.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000299057500057&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicEICPCI-S(ISTP)
Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique
No full textShallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. A novel direct current current-voltage (DCIV) technique demonstrated with multiple sharp peak signals is proposed to characterize interface state generation in the channel and in the STI drift regions separately. Degradation of STI-based LDMOS transistors in various hot-carrier stress modes is investigated experimentally by proposed technique. A two-dimensional numerical device simulation is performed to obtain insight into the proposed technique and device degradation characteristics under hot-carrier stress conditions. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our results show that the maximum Isub stress becomes the worst hot-carrier degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region. (C) 2012 The Japan Society of Applied PhysicsPhysics, AppliedSCI(E)EI0ARTICLE4,SInull5
Mechanism of pH-dependent activation of the sodium-proton antiporter NhaA
No full textabstract: Escherichia coli NhaA is a prototype sodium-proton antiporter, which has been extensively characterized by X-ray crystallography, biochemical and biophysical experiments. However, the identities of proton carriers and details of pH-regulated mechanism remain controversial. Here we report constant pH molecular dynamics data, which reveal that NhaA activation involves a net charge switch of a pH sensor at the entrance of the cytoplasmic funnel and opening of a hydrophobic gate at the end of the funnel. The latter is triggered by charging of Asp164, the first proton carrier. The second proton carrier Lys300 forms a salt bridge with Asp163 in the inactive state, and releases a proton when a sodium ion binds Asp163. These data reconcile current models and illustrate the power of state-of-the-art molecular dynamics simulations in providing atomic details of proton-coupled transport across membrane which is challenging to elucidate by experimental techniques.The final version of this article, as published in Nature Communications, can be viewed online at: https://www.nature.com/articles/ncomms1294
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