1,720,989 research outputs found
Van Der Waals Force Mediated, Rotationally Aligned Dry-Transfer-Stacking of Two-Dimensional Tungsten Diselenide
No full text© 2020, The Korean Physical Society. Rotationally aligned, two-dimensional (2D), transition-metal dichalcogenides (TMDs) exhibit unique electronic, optical, and optoelectronic properties compared to random stacking. Rotationally aligned graphene stacking was demonstrated previously for numerous exotic phenomena, such as superconductivity, resonant tunneling, and moiré pattern. However, rotationally aligned drytransfer techniques of TMDs, have yet to be demonstrated. Here, we show a simple method of selective cutting of a few-layer tungsten diselenide (WSe2) flake and rotationally aligning it by using dry-transfer stacking. The dry transfer techniques used for this study were adapted to maintain low sample contamination, a high-quality interface, a low number of defects. A combination of viscoelastic and thermoelastic materials was used for the TMD pickup and release to facilitate the rotationally aligned stacking. Aligned WSe2 stacks were characterized by Raman and photoluminescence spectroscopy to evaluate the integrity of the fabricated stack. This study highlights the possibility of using a rotationally aligned, artificial stacking method for exfoliated TMD materials for future electronic and optoelectronic applications11sciescopuskc
Graphene Spin Valves for Spin Logic Devices
No full textCopyright © 1999-2023 John Wiley & Sons, Inc. All rights reserved. An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.11Nsciescopu
Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots
Full text linkSilicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ∼5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies. © The Author(s) 2016111sciescopu
Layer-by-layer hybrid chemical doping for high transmittance uniformity in graphene-polymer flexible transparent conductive nanocomposite
Full text linkA traditional transparent conducting film (TCF) such as indium tin oxide (ITO) exhibits poor mechanical flexibility and inconsistent transmittance throughout the UV-VIS-NIR spectrum. Recent TCFs like graphene films exhibit high sheet resistance (Rs) due to defect induced carrier scattering. Here we show a unique hybrid chemical doping method that results in high transmittance uniformity in a layered graphene-polymer nanocomposite with suppressed defect-induced carrier scattering. This layer-by-layer hybrid chemical doping results in low Rs (15 sq at >90% transmittance) and 3.6% transmittance uniformity (300-1000 nm) compared with graphene (17%), polymer (8%) and ITO (46%) films. The weak localization effect in our nanocomposite was reduced to 0.5%, compared with pristine (4.25%) and doped graphene films (1.2%). Furthermore, negligible Rs change (1.2 times compared to 12.6 × 103 times in ITO) and nearly unaltered transmittance spectra were observed up to 24 GPa of applied stress highlighting mechanical flexibility of the nanocomposite film. © 2018 The Author(s
Boosting Phototransistor Performance in Monolayer TMDs via Multiple Reflections from DBR
No full text[Image: see text] Transition-metal dichalcogenides (TMDs) are intensively studied for high-performance phototransistors. However, the device performance is limited by the single photoexcitation. Here, we show a unique strategy in which phototransistor performance can be boosted by fabricating the device on top of a distributed Bragg reflector (DBR). Monolayer molybdenum disulfide (MoS(2)) and tungsten disulfide (WS(2)) phototransistors were fabricated on DBR and SiO(2) substrates for comparison. Furthermore, phototransistor performances including photocurrent, responsivity, photoinduced mobility, and subthreshold swing highlight 582 times enhancement in photoresponsivity ratio and 350 times enhancement in photocurrent ratio in the DBR sample using transparent graphene electrode and hBN encapsulation
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
No full textNegative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec−1 with an average sub-10 SS across five decades with on-off ratio exceeding 107, by simultaneous improvement of transport and body factors in monolayer MoS2-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics. © 2024 Wiley-VCH GmbH.11Nsciescopu
Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering
No full textUnusually high exciton binding energies (BEs), as much as similar to 1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS2) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO2 hole traps under high photocarrier densities and become more prominent in rhenium-doped WS2. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (similar to 214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS2 midflake regions distinctive from the flake edges.11Nsciescopu
Sequential order dependent dark-exciton modulation in bi-layered TMD heterostructure
No full textAbstract We report the emergence of dark-excitons in transition-metal-dichalcogenide (TMD) heterostructures that strongly rely on the stacking sequence, i.e., momentum-dark K-Q exciton located exclusively at the top layer of the heterostructure. The feature stems from band renormalization and is distinct from those of typical neutral excitons or trions, regardless of materials, substrates, and even homogeneous bilayers, which is further confirmed by scanning tunneling spectroscopy. To understand the unusual stacking sequence, we introduce the excitonic Elliot formula by imposing strain exclusively on the top layer that could be a consequence of the stacking process. We further find that the intensity ratio of Q- to K-excitons in the same layer is inversely proportional to laser power, unlike for conventional K-K excitons. This can be a metric for engineering the intensity of dark K-Q excitons in TMD heterostructures, which could be useful for optical power switches in solar panels
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
No full text© 2023 Springer Nature Limited. Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~1011 at 15 K. Such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.11Nsciescopu
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