1,721,032 research outputs found
X-ray Multiple Diffraction On The Shallow Junction Of B In Si(0 0 1)
No full textWe apply X-ray multiple diffraction (XRMD) as a high resolution probe for analyzing the amorphous-crystalline interface (Si interstitial rich region) for different implantation energies and thermal treatment conditions during the formation of a shallow junction of B implanted in Si(0 0 1) crystals. Renninger scans (RS) (φ-scans) of the three sets of samples were measured using the (0 0 2) primary reflection, forbidden by the Si space group. Si(0 0 2) RS of as-implanted samples showed an extra peak coming from the Si interstitial atoms in the implanted region. This hybrid peak provides a very sensitive probe for analyzing the occurrence of interstitial Si atoms close to the amorphous-crystalline interface. We report its behavior as a function of the thermal treatment. The separation between the vacancy rich and the interstitial rich regions explains these results on the basis of the Si interstitial annihilation for shallow implantation. Samples with deep implantation are outside the detection range of the technique, in agreement with results for etched samples. © 2004 Elsevier B.V. All rights reserved.2281-2 SPEC. ISS.177182Morelhão, S.L., Cardoso, L.P., (1993) Solid State Commun., 88 (6), p. 465Morelhão, S.L., Avanci, L.H., Hayashi, M.A., Cardoso, L.P., Collins, S.P., (1998) Appl. Phys. Lett., 73 (15), p. 2194Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81 (24), p. 5426Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Roberts, K.J., Sasaki, J.M., Sherwood, J.N., (2000) Phys. Rev. B, 61 (10), p. 6507Avanci, L.H., Lai, X., Sasaki, J.M., Roberts, K.J., Cardoso, L.P., (2003) J. Appl. Crystallogr., 36, p. 1230Renninger, M., (1937) Z. Phys., 106, p. 141Chang, S.L., Multiple diffraction of X-rays in crystals (1984) Series in Solid-State Sciences, 50. , Springer-Verlag, Berlin, Heidelberg, New YorkMorelhão, S.L., Cardoso, L.P., (1996) J. Appl. Cryst., 29, p. 446Morelhão, S.L., Cardoso, L.P., Sasaki, J.M., De Carvalho, M.M.G., (1991) J. Appl. Phys., 70 (5), p. 2589Avanci, L.H., Hayashi, M.A., Cardoso, L.P., Morelhão, S.L., Riesz, F., Rakennus, K., Hakkarainen, T., (1998) J. Cryst. Growth, 188, p. 220Hayashi, M.A., Morelhão, S.L., Avanci, L.H., Cardoso, L.P., Sasaki, J.M., Kretly, L.C., Chang, S.L., (1997) Appl. Phys. Lett., 71 (18), p. 2614Larson, B.C., Barhorst, J.F., (1980) J. Appl. Phys., 51, p. 3181Morelhão, S.L., (2003) J. Synchrotron Rad., 10 (3), p. 236Klappe, J., Bársony, I., Liefiting, J.R., Ryan, T.W., (1993) Thin Solid Films, 235, p. 18
Hybrid Reflections In Ingap/gaas(001) By Synchrotron Radiation Multiple Diffraction
No full textHybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhão et al., Appl. Phys. Lett. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three-dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (ω-scan) measured for each 15o in the azimuthal plane was arranged in a pole diagram in φ for two samples with different layer thicknesses (#A - 58 nm and #B - 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (113) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (ω:φ) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in-plane match of layer/substrate lattice parameters. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.2463544547Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81, p. 5426Avanci, L.H., Cardoso, L.P., Sasaki, J.M., Girdwood, S.E., Roberts, K.J., Pugh, D., Sherwood, J.N., (2000) Phys. Rev. B, 61, p. 6507dos Santos, A.O., Yaegashi, W.H., Marcon, R., Li, B.B., Gelano, R.V., Cardoso, L.P., Sasaki, J.M., Melo, F.E.A., (2001) J. Phys.: Condens. Matter, 13, p. 10497Almeida, J.M.A., Miranda, M.A.R., Remédios, C.M.R., Melo, F.E.A., Freire, P.T.C., Sasaki, J.M., Cardoso, L.P., Kycia, S., (2003) J. Appl. Crystallogr., 36, p. 1348Almeida, J.M.A., Miranda, M.A.R., Avanci, L.H., de Menezes, A.S., Cardoso, L.P., Sasaki, J.M., (2006) J. Synchrotron Radiat., 13, p. 435de Menezes, A.S., dos Santos, A.O., Almeida, J.M.A., Sasaki, J.M., Cardoso, L.P., (2007) J. Phys.: Condens. Matter, 19, p. 106218Hayashi, M.A., Morelhão, S.L., Avanci, L.H., Cardoso, L.P., Sasaki, J.M., Kretly, L.C., Chang, S.L., (1997) Appl. Phys. Lett., 71 (18), p. 2614Orloski, R.V., Pudenzi, M.A.A., Hayashi, M.A., Swart, J.W., Cardoso, L.P., (2005) J. Mol. Catal. A, Chem., 228, p. 177Morelhão, S.L., Cardoso, L.P., Sasaki, J.M., de Carvalho, M.M.G., (1991) J. Appl. Phys., 70 (5), p. 2589Morelhão, S.L., Avanci, L.H., Hayashi, M.A., Cardoso, L.P., Collins, S.P., (1998) Appl. Phys. Lett., 73 (15), p. 2194Renninger, M., (1937) Z. Phys., 106, p. 141Morelhão, S.L., Cardoso, L.P., (1993) J. Appl. Phys., 73, p. 4218(1993) Solid State Commun, 88, p. 465Morelhão, S.L., Domagala, J.Z., (2007) J. Appl. Crystallogr., 40, p. 456Takagi, S., (1962) Acta Crystallogr, 15, p. 1311Takagi, S., (1969) J. Phys. Soc. Jpn., 26, p. 1239Taupin, D., (1964) Bull. Soc. Fr. Mineral. Cristallogr., 87, p. 469Pesek, A., Kastler, P., Palmetshofer, L., Hauzenberger, F., Juza, P., Faschinger, W., Lischka, K., (1993) J. Phys. D, Appl. Phys., 26, pp. A17
Mapping Of Bragg-surface Diffraction Of Inp/gaas(1 0 0) Structure
No full textInP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam epitaxy were analyzed using three-beam bragg-surface diffraction (BSD) of the X-ray multiple diffraction (MD) phenomenon. The angular MD condition is scanned by varying both, the ω incidence angle and the Φ rotation angle around [1 0 0] in order to provide the mapping of this condition. From the two-dimensional mapping - ω : Φ scan, the crystalline perfection (mosaic spread) parallel (ηΦ) and perpendicular (ηω) to the growth direction can be investigated along the layer surface and the substrate interface. The ω:Φ scan of the 0 0 0, 2 0 0, 1 1̄ 1 BSD is used to analyze the growth processing and post-growth annealing of InP/GaAs samples. The effect of various defect-reduction tools on layer and substrate crystal quality is also investigated. © 1998 Elsevier Science B.V. All rights reserved.1881-4220224Morelhão, S.L., Avanci, L.H., Cardoso, L.P., Riesz, F., Rakennus, K., Hakkarainen, T., (1995) Vacuum, 46 (9-10), p. 1013Sasaki, J.M., Cardoso, L.P., Campos, C., Roberts, K.J., Clark, G.F., Pantos, E., Sacilotti, M.A., (1997) J. Crystal Growth, 172, p. 284Renninger, M., (1937) Z. Kristallogr., 106, p. 141Morelhão, S.L., Cardoso, L.P., (1993) J. Appl. Phys., 73 (9), p. 4218Morelhão, S.L., Cardoso, L.P., (1993) Solid State Commun., 88 (6), p. 465Morelhão, S.L., Cardoso, L.P., (1992) Mat. Res. Soc. Symp. Proc., 262, p. 175Morelhão, S.L., Cardoso, L.P., (1996) J. Appl. Crystallogr., 29, p. 446Sasaki, J.M., Pereira, A.P., Morelhão, S.L., Oliveira, C.E.M., Cardoso, L.P., (1991) Rev. Fís. Apl. Instrum., 6 (2), p. 78Riesz, F., Lischka, K., Rakennus, K., Hakkarainen, T., Pesek, A., (1991) J. Crystal Growth, 114, p. 127Rakennus, K., Hakkarainen, T., Tappura, K., Pessa, M., (1991) Proc. 6th European Conf. on MBE and Related Growth Methods, , Tampere, Finland, April Paper Fo4Riesz, F., Rakennus, K., Hakkarainen, T., Pessa, M., (1991) J. Vac. Sci. Technol. B, 9, p. 17
X-ray Multiple Diffraction In The Characterization Of Tino And Tio2 Thin Films Grown On Si(0 0 1)
No full textTiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (-80 Å/min) of TiO2 and (-40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., φ{symbol}-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. © 2006 Elsevier B.V. All rights reserved.253315901594Buiting, M.J., Oterloo, A.F., (1992) J. Electrochem. Soc., 139, p. 2580Staia, M.H., Cervantes, C., Viloria, S., (1995) Surf. Coat. Technol., 72, p. 500Buiting, M.J., Oterloo, A.F., Montree, A.H., (1991) J. Electrochem. Soc., 138, p. 500Hedge, R.I., Tobin, P.J., Fiordalice, R.W., Travis, E.O., (1993) J. Vac. Sci. Technol. A, 11, p. 1692Fabreguette, F., Imhoff, L., Guillot, J., (2000) Surf. Coat. Technol., 125, p. 396Granier, B., Chatillon, C., Allibert, M., (1982) J. Am. Ceram. Soc., 65, p. 465Fabreguette, F., Maglione, M., Imhoff, L., (2001) Appl. Surf. Sci., 6881, p. 1Chiaramonte, T., Cardoso, L.P., Gelamo, R.V., Fabreguette, F., Sacilotti, M., Imhoff, L., Bourgeois, S., Marco de Lucas, M.C., (2003) Appl. Surf. Sci., 212-213, pp. 661-666Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81 (24), pp. 5426-5429Morelhao, S.L., Cardoso, L.P., (1996) J. Appl. Cryst., 29, p. 446Renninger, M., (1937) Z. Phys., 106, pp. 141-176Morelhão, S.L., Cardoso, L.P., (1992) Mater. Res. Soc. Symp. Proc., 262, pp. 175-180Morelhão, S.L., Avanci, L.H., Cardoso, L.P., (1995) Mater. Res. Soc. Symp. Proc., 355, pp. 215-220Cole, H., Chambers, F.W., Dunn, H.M., (1962) Acta Cryst., 15, p. 138Fabreguette, F., Maglione, M., Imhoff, L., (2000) Chem. Vap. Deposition, 6, p. 109Bauer, G., Richter, W., (1996) Optical Characterization of Epitaxial Semiconductor Layers, , Springer-Verlag, Berlin, Heidelberg, New YorkDoener, M.F., Brennan, S., (1988) J. Appl. Phys., 63, p. 12
Piezoelectric Coefficients D14, D16, D34 And D36 Of An L-arginine Hydrochloride Monohydrate Crystal By X-ray Three-beam Diffraction
No full textPrevious work employed X-ray three-beam diffraction techniques to obtain part of the L-arginine hydrochloride monohydrate (L-AHCL.H2O) piezoelectric coefficients, namely d21, d22, d 23 and d25. Those coefficients were obtained by measuring the shift in the angular position of a number of secondary reflections as a function of the electric field applied in the [010] piezoelectric direction. In this paper a similar procedure has been used to measure the remaining four piezoelectric coefficients in L-AHCL.H2O: with the electric field applied in the [100] direction, d14 and d36 were measured; with the electric field applied in the [001] direction, d34 and d36 were obtained. Therefore the entire piezoelectric matrix of the L-AHCL.H2O crystal has been successfully measured. © 2006 International Union of Crystallography Printed in Great Britain - all rights reserved.136435439Almeida, J.M.A., Miranda, M.A.R., Remédios, C.M.R., Melo, F.E.A., Freire, P.T.C., Sasaki, J.M., Cardoso, L.P., Kycia, S., (2003) J. Appl. Cryst., 36, pp. 1348-1351Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81, pp. 5426-5429Avanci, L.H., Cardoso, L.P., Sasaki, J.M., Girdwood, S.E., Roberts, K.J., Pugh, D., Sherwood, J.N., (2000) Phys. Rev. B, 61, pp. 6507-6514Chang, S.L., (1984) Multiple Diffraction of X-rays in Crystals, , Berlin: SpringerCole, H., Chamber, F.W., Dunn, H.M., (1962) Acta Cryst., 15, pp. 138-144Deloach, L.D., (1994) J. Opt. Soc. Am. B, 11, pp. 1186-1196Dow, J., Jensen, L.H., (1970) Acta Cryst. B, 26, pp. 1662-1671Evlanova, N.F., Moldazhanova, G.T., Pashina, Z.S., Rashkovich, L.N., Shekunov, B.Y., (1990) Kristallografiya, 35, p. 899Haussuehl, S., Chrosch, J., Gnanam, F., Fiorentini, E., Recker, K., Wall-Rafen, F., (1990) Cryst. Res. Technol., 25, pp. 617-623Monaco, S.B., Davis, L.E., Velsko, S.P., Wang, F.T., Eimerl, D., Zalkin, A., (1987) J. Cryst. Growth, 85, pp. 252-255Morelhão, S.L., (2003) J. Synchrotron Rad., 10, pp. 236-241Mukerji, S., Kar, T., (1998) Mater. Chem. Phys., 57, pp. 72-76Mukerjia, S., Kar, T., (2000) Mater. Res. Bull., 35, pp. 711-717Nye, J.F., (1957) Physical Properties of Crystals, , Oxford: ClarendonPetrosyan, A.M., Sukiasyam, R.P., Karapetyan, H.A., Terzyan, S.S., Feigelson, R.S., (2000) J. Cryst. Growth, 213, pp. 103-111Rashkovich, L.N., Shekunov, B.Y., (1991) J. Cryst. Growth, 112, pp. 183-191Renninger, M., (1937) Z. Phys., 106, p. 141Dos Santos, A.O., Cardoso, L.P., Sasaki, J.M., Miranda, M.A.R., Melo, F.E.A., (2003) J. Phys. Condens. Matter, 15, pp. 7835-7842Xu, D., Jiang, M.H., Tan, Z.K., (1983) Acta Chim. Sin., 41, pp. 570-57
X-ray Multiple Diffraction As A Probe To Determine All The Piezoelectric Coefficients Of A Crystal: Rochelle Salt Case
No full textThe x-ray multiple diffraction method, which allows us to determine the piezoelectric coefficients of a single crystal under an external electric field (E), was applied to Rochelle salt (dos Santos et al 2001 J. Phys.: Condens. Matter 13 10497) for E parallel to the piezoelectric Y direction. In this work, the theory was extended to consider an observed monoclinic-triclinic distortion under E application into the other two piezoelectric X and Z directions. Renninger scans carried out using the chosen (060) primary reflection have provided the four remaining coefficients through the measurement of the properly chosen secondary peaks. So that all eight piezoelectric coefficients (d14, d16, d21, d22, d23, d25, d34 and d36) for Rochelle salt were determined.154678357842Cady, W.G., (1964) Piezoelectricity, , (New York: Dover) (1946 revised edn)Jona, F., Shirane, G., (1962) Ferroelectric Crystals, , (Oxford: Pergamon) chapter VIIBeevers, A.C., Hughes, W., (1941) Proc. R. Soc. A, 117, p. 251Suzuki, E., Amamo, A., Nozaki, R., Shiozaki, Y., (1994) Ferroelectrics, 152, p. 385Irwin Vigness, C., (1934) Phys. Rev., 46, pp. 255-257Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81, p. 5426Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Roberts, K.J., Sasaki, J.M., Sherwood, J.N., (2000) Phys. Rev. B, 61, p. 6507Dos Santos, A.O., Yaegashi, W.H., Marcon, R., Li, B.B., Gelamo, R.V., Cardoso, L.P., Sasaki, J.M., Melo, F.E.E.A., (2001) J. Phys.: Condens. Matter, 13, p. 10497Nye, J.F., (1957) Physical Properties of Crystals, , (Oxford Science Publications) (Oxford: Clarendon)Voigt, W., (1910) Gött. Nachr., Lehrbuch der Kristallphysik 1st Edn, , (Leipzig: Teubner)Cole, H., Chambers, F.W., Dunn, H.M., (1962) Acta Crystallogr., 15, p. 138Shuvalov, L.A., (1988) Modern Crystallography IV, 37, p. 234. , (Berlin: Springer
Synchrotron Radiation Multiple Diffraction In The Characterization Of The Pral2 Magnetocaloric Compound
No full textX-ray multiple diffraction technique using synchrotron radiation is applied to characterize the PrAl2 magnetocaloric compound. Renninger scans (φ-scans) of the (002) primary reflection were measured in the Brazilian Synchrotron Laboratory (LNLS). The (5 3 3̄) (5 3 5) four-beam case provided a = 8.0277(5) Å and the sample surface polishing effect was clearly observed through the measurement of Bragg-surface diffraction (BSD) peak and the mapping (MBSD) of its multiple diffraction condition. © 2003 Elsevier B.V. All rights reserved.272-276III21542156Tishin, A.M., Magnetocaloric effect in the vicinity of phase transitions (1999) Handbook of Magnetic Materials, 4, p. 395. , K.H.J. Buschow (Ed.), Elsevier, AmsterdamVon Ranke Perlingeiro, P.J., Pecharsky, V.K., Gschneidner, K.A., (1998) Phys. Rev. B, 58, p. 12110Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81 (24), p. 5426Morelhão, S.L., Cardoso, L.P., (1996) J. Appl. Crystallogr., 29, p. 446Cole, H., Chambers, F.W., Dunn, H.M., (1962) Acta Crystallogr., 15, p. 138Appa Rao, B., Satyanarayana Murthy, K., Kistaiah, P., (1987) J. Phys. D, 20, p. 107
Hysteresis-like Behavior In Mbanp Crystals
No full textIn a previous study of (-)-2-(α-methylbenzylamino)-5-nitropyridine (MBANP) [Avanci, L. H. et. al., Phys. Rev. B 2000, 61, 6507], X-ray multiple diffraction assessments of the small changes in the unit cell parameters due to a strain produced by E→, together with the resulting variations in the (hkl) peak position and the observed strain, were used to calculate the piezoelectric coefficients of this material. In the present work, we report the extension of these measurements to the determination of the variation of the unit cell parameters of this material under the influence of an externally applied dc electric field. Rocking curves were measured using a SIEMENS P4 single-crystal diffractometer equipped with encoders to ensure omega axis step sizes smaller than 1 mdeg. At the beginning of the experiments, the electric field was increased from zero to 3.2 × 105 V/m and then decreased to zero. It was then reversed in polarity from zero to -3.2 × 105 V/m and returned to zero again to complete the E-cycle. The measured strain versus E-cycle showed an interesting butterfly wing shape hysteresis behavior. Quantum mechanical calculations on isolated MBANP molecules show that the main features of the hysteresis shape can be explained in terms of field-induced changes in the charge profiles and geometry of isolated MBANP molecules.4510791081Halfpenny, P.J., Morrison, H., Ristic, R.I., Shepherd, E.E.A., Sherwood, J.N., Simpson, G.S., Yoon, C.S., (1993) Proc. Royal Soc. (London), A440, p. 683Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81, p. 5426Avanci, L.H., Braga, R.S., Cardoso, L.P., Galvão, D.S., Sherwood, J.N., (1999) Phys. Rev. Lett., 83, p. 5146Gilmour, S., Pethrick, R.A., Pugh, D., Sherwood, J.N., (1993) Philos. Mag., B67, p. 855Avanci, L.H., Cardoso, L.P., Sasaki, J.M., Girdwood, S.E., Roberts, K.J., Pugh, D., Sherwood, J.N., (2000) Phys. Rev. B, 61, p. 6507Dewar, M.S., Zoebish, E.G., Healy, E.F., Stewart, J.J.P., (1985) J. Am. Chem. Soc., 107, p. 3902Dantas, S.O., Dos Santos, M.C., Galvão, G.D.S., (1996) Chem. Phys. Lett., 256, p. 207Galvão, D.S., Dos Santos, D.A., Laks, B., De Melo, C.P., Caldas, M.J., (1989) Phys. Rev. Lett., 63, p. 786(1990) Phys. Rev. Lett., 65, p. 527Toledano, J.C., Toledano, P., (1987) The Landau Theory of Phase Transitions, , World Scientific: Singapore, and references therei
Magnetization And Specific Heat In U 1-xla Xga 2 And Magnetocaloric Effect In Uga 2
Full text linkWe have investigated the properties of the ferromagnetic series U1-x Lax Ga2. The magnetization results show a reduction of μeff and of Tc when x is increased. The electronic coefficient γ of the specific heat increases to a maximum of 260 mJUmol K2 at x=0.75. This behavior is probably consequence of delocalization of 5f electrons, causing enhancement of the density of states. For x=0.9 the ordering disappears and a non-Fermi-liquid behavior is observed. U Ga2 also presented a significant magnetocaloric effect of Δ Smag =-3.5 Jkg K at 120 K and H=7 T which can be modified by chemical pressure. © 2005 American Institute of Physics.9710Andeev, A.V., Belov, K.P., Deriagin, A.V., Levitin, R.Z., Menovsky, A., (1979) J. Phys. Colloq., 4, p. 82Da Silva, L.M., Gandra, F.G., Rojas, D.P., Cardoso, L.P., Medina, A.N., (2002) Physica B, 312-313, p. 906Tran, V.H., Kaczorowski, D., Roisnel, T., Tróc, R., Noel, H., Bouŕe, F., Andŕ, G., (1995) Physica B, 205, p. 24Gandra, F.G., Rojas, D.P., Shlyk, L., Cardoso, L.P., Medina, A.N., (2001) J. Magn. Magn. Mater., 226, p. 1312Barbara, B., (1973) J. Phys. (Paris), 34, p. 1039Sechovsky, V., Havela, L., Svoboda, P., (1986) J. Less-Common Met., 121, p. 163Segal, E., Wallace, W.E., (1975) J. Solid State Chem., 13, p. 201Radwanski, R.J., Kim-Ngan, N.H., (1995) J. Magn. Magn. Mater., 140, p. 1373Zapf, V.S., Dickey, R.P., Freeman, E.J., Sirvent, C., Maple, M.B., (2002) Phys. Rev. B, 65, p. 024437Pecharsky, V.K., Gschneider Jr., K.A., (1997) Phys. Rev. Lett., 78, p. 4494Pecharsky, V.K., Gschneider Jr., K.A., (1997) Phys. Rev. Lett., 78, p. 4494Plackowski, T., Junod, A., Bouquet, F., Sheikin, I., Wang, Y., Jezÿowski, A., Mattenberger, K., (2003) Phys. Rev. B, 67, p. 184406Svobodaa, P., Sechovsky, V., Menovsky, A.A., (2003) Physica B, 339, p. 177Gama, S., Coelho, A.A., De Campos, A., Carvalho, A.M.G., Gandra, F.G., Von Ranke, P.J., De Oliveira, N.A., Phys. Rev. Lett
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