1,721,080 research outputs found
Bond Distribution And Structure Of Amorphous Germanium-nitrogen Alloys
No full textThe Ge 3d core levels of sub-stoichiometric amorphous germanium-nitrogen (a-GeN) alloys are studied by X-ray photoelectron spectroscopy (XPS). The nitrogen concentration in the samples, as determined from nuclear reaction analysis (NRA), is allowed to vary from zero to ≈ 3 × 1022 atoms cm-3. For the whole series of samples both, the chemical shift and the bonding distribution are studied as a function of the nitrogen concentration in the alloys. The chemical shift per Ge-N bond is also investigated using different methods to deconvolute core level energy spectra, and found to be approximately (0.5 ± 0.1) eV. Furthermore, the present study shows that the Ge-N bond distribution, as obtained from the analysis of Ge 3d core level data, is in relatively good agreement with the random bonding model (RBM).1932399410Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University PressZanatta, A.R., Chambouleyron, I., (1992) Phys. Rev. B, 46, p. 2119Zanatta, A.R., Chambouleyron, I., (1993) Phys. Rev. B, 48, p. 4560Cardona, M., Ley, L., (1978) Photoemission in Solids I, General Principles, , Chap. 1, Ed. M. CARDONA and L. LEY, Springer-Verlag, Berlin/Heidelberg/New YorkZanatta, A.R., Landers, R., De Castro, S.G.C., Kleiman, G.G., Chambouleyron, I., Grilli, M.I., (1995) Appl. Phys. Letters, 66, p. 1258Ley, L., (1984) The Physics of Hydrogenated Amorphous Semiconductors, 2. , Chap. 3, Ed. J. D. JOANNOPOULOS and G. LUCOVSKY, Springer-Verlag, Berlin/Heidelberg/New YorkBriggs, D., Seah, M.P., (1984) Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, , John Wiley & Sons, New YorkLey, L., (1994) Phil. Mag., B70, p. 417Kärcher, R., Ley, L., Johnson, R., (1984) Phys. Rev. B, 30, p. 1896Sanderson, R.T., (1976) Chemical Bonds and Bond Energy, , Chap. 5, Academic Press, London/New YorkHasegawa, S., He, L., Inokuma, T., Kurata, Y., (1992) Phys. Rev. B, 46, p. 12478Ingo, G.M., Zacchetti, N., Sala, D.D., Coluzza, C., (1989) J. Vacuum Sci. Technol. A, 7, p. 3048Yin, Z., Smith, F.W., (1990) Phys. Rev. B, 42, p. 3658Bagratishvili, G.D., Dzhanelidze, R.B., Kurdiani, N.I., Saksaganskii, O.V., (1976) Phys. Stat. Sol. (A), 36, p. 73Ruddlesden, S.N., Popper, P., (1958) Acta Cryst., 11, p. 465Zanatta, A.R., Chambouleyron, I., (1995) Solid State Commun., 95, p. 207Schmeisser, D., Schnell, R.D., Bogen, A., Himpsel, F.J., Rieger, D., Landgren, G., Morar, J.F., (1986) Surface Science, 172, p. 455Cardona, M., Tejeda, J., Shevchik, N.J., Langer, D.W., (1973) Phys. Stat. Sol. (B), 58, p. 483Patella, F., Sette, F., Perfetti, P., Quaresima, C., Capasso, C., Capozi, M., Savoia, A., Evangelisti, F., (1984) Solid State Commun., 49, p. 74
Band Tails And Defect Density In P-type Doped Hydrogenated Amorphous Germanium
No full textThe correlations between the defect density, N D, Fermi energy, E F, and Urbach tail, E 0, are examined for rf-sputtered a-Ge:H films p-type doped by aluminum, gallium and indium. Photothermal deflection spectroscopy was used for the determination of N D and E 0, while E F was deduced from conductivity measurements. The present data show different dependence of N D on E F for samples doped by different dopants, but a similar behavior when N D is plotted as a function of E 0 or the solid-state dopant impurity concentration. The simple equilibrium model of doping alone is unable to explain the present results. The data suggest that the doping-induced defects observed are related to the large fraction of neutral dopant impurities expected to be present in the material.198-200PART 1399402Street, R.A., (1982) Phys. Rev. Lett., 49, p. 1187Winer, K., (1990) Phys. Rev., B41, p. 12150Pierz, K., Fuhs, W., Mell, H., (1991) Philos. Mag., B63, p. 123Ebersberger, B., Krühler, W., Fuhs, W., Mell, H., (1994) Appl. Phys. Lett., 65, p. 1683Comedi, D., Fajardo, F., Chambouleyron, I., (1995) Phys. Rev., B52, p. 4974Fajardo, F., Chambouleyron, I., (1995) Phys. Rev., B52, p. 4965Graeff, C.F.O., Stutzmann, M., Eberhardt, K., (1994) Philos. Mag., B69, p. 387Comedi, D., Fajardo, F., Chambouleyron, I., Tabacniks, M., (1994) J. Vac. Sci. Technol., A12, p. 3149Stutzmann, M., (1989) Philos Mag., B60, p. 531Aljishi, S., Shu, J., Ley, L., (1989) Mater. Res. Soc. Symp. Proc., 149, p. 12
A-sixge1-x:h Thin Films
No full textIn this work we study some optical and electronic properties of hydrogenated amorphous silicon-germanium alloys (a-SixGe1-x:H) deposited by co-sputtering. Thin films were deposited varying silicon concentration (estimated) from 0 up-to 10 at. %. The room temperature dark conductivity changes by more than one order of magnitude with increasing silicon content, while the changes in optical properties are less expressive. The main results concerning the thin film properties, as well as the main problems related to Schottky barriers (metal/semiconductor) performance are discussed.261363366Chambouleyron, I., Graeff, C.F., Zanatta, A.R., Fajardo, F., Mulato, M., Campomanes, R., Comedi, D., Marques, F.C., Phys. Stat. Sol. (B), , unpublishedGraeff, C.F.O., Chambouleyron, I., (1994) J. Appl. Phys., 76, p. 1Fang, C.J., Grunz, K.J., Ley, L., Cardona, M., Demond, F.J., Muller, G., Kalbitzer, S., (1980) J. Non-Cryst. Solids, 35-36, p. 255Cardona, M., (1983) Phys. Stat. Sol. (B), 118, p. 463Tauc, J., Grigorovici, R., Vancu, A., (1966) Phys. Stat. Sol., 15, p. 627Amer, N.M., Jackson, W.B., (1984) Semiconductor and Semimetals, 21 B, p. 83. , Chapter 3Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University Press, Cambridge, MAStutzmann, M., Street, R.A., Tsai, C.C., Boyce, J.B., Ready, S.E., (1989) J. Appl. Phys., 66, p. 569Graeff, C.F.O., Brandt, M.S., Eberhardt, K., Chambouleyron, I., Stutzmann, M., (1993) J. Non-Cryst. Solids, 164-166, p. 15Marques, F.C., private communicatio
Electronic Structure Of Amorphous Germanium-nitrogen Alloys: A Uv Photoelectron Spectroscopy Study
No full textThe valence band and Ge 3d core-level structure of amorphous germanium-nitrogen alloys (a-Ge1-xNx) of various compositions (0 < x < 0.36) have been studied by ultraviolet photoelectron spectroscopy using He I and He II excitation. Two N-related bands centered at about 11 and 5 eV below the Fermi energy are found to evolve in the valence band spectra with increasing x. These are attributed to N 2p bonding and lone-pair states, respectively. A systematic shift and broadening of the Ge 3d core level peaks occurs with increasing x. Analysis of this effect allows for the determination of a N-induced chemical shift per Ge-N bond of 0.30 ± 0.08 eV. For x > 0.22, a significant recession of the top of the valence band sets in, which is correlated by the sudden increase of the optical gap. An asymmetrical widening of the band gap for x > 0.22 is deduced.198-200PART 1136139Chambouleyron, I., Marques, F., Cisneros, J., Alvarez, F., Moehlecke, S., Losch, W., Pereyra, I., (1985) J. Non-cryst. Solids, 77-78, p. 1309Bagratishvili, G.D., Dzhanelidze, R.B., Kurdiani, N.I., Saksaganskii, O.V., (1976) Phys. Status Solidi, 36 A, p. 73Zanatta, A.R., Chambouleyron, I., (1993) Phys. Rev., B48, p. 4560Kärcher, R., Ley, L., Johnson, R.L., (1984) Phys. Rev., B30, p. 1896Guraya, M.M., Ascolani, H., Zampieri, G., Dias Da Silva, J.H., Cantão, M.P., Cisneros, J.I., (1994) Phys. Rev., B49, p. 13446Yeh, J.J., Lindau, I., (1985) At. Dat. Nuc. Dat. Tables, 32, p. 1Comedi, D., Zanatta, A.R., Alvarez, F., Chambouleyron, I., (1995) J. Vac. Sci. Technol., A13, p. 2278Zanatta, A.R., Chambouleyron, I., (1995) Solid State Commun., 95, p. 207Davis, E.A., Piggins, N., Bayliss, S.C., (1987) J. Phys., C20, p. 441
Nitrogen In Germanium
No full textThe known properties of nitrogen as an impurity in, and as an alloy element of, the germanium network are reviewed in this article. Amorphous and crystalline germanium-nitrogen alloys are interesting materials with potential applications for protective coatings and window layers for solar conversion devices. They may also act as effective diffusion masks for III-V electronic devices. The existing data are compared with similar properties of other group IV nitrides, in particular with silicon nitride. To a certain extent, the general picture mirrors the one found in Si-N systems, as expected from the similar valence structure of both elemental semiconductors. However, important differences appear in the deposition methods and alloy composition, the optical properties of as grown films, and the electrical behavior of nitrogen-doped amorphous layers. Structural studies are reviewed, including band structure calculations and the energies of nitrogen-related defects, which are compared with experimental data. Many important aspects of the electronic structure of Ge-N alloys are not yet completely understood and deserve a more careful investigation, in particular the structure of defects associated with N inclusion. The N doping of the a-Ge:H network appears to be very effective, the activation energy of the most effectively doped samples becoming around 120 meV. This is not the case with N-doped a-Si:H, the reasons for the difference remaining an open question. The lack of data on stoichiometric β-Ge3N4 prevents any reasonable assessment on the possible uses of the alloy in electronic and ceramic applications. © 1998 American Institute of Physics.841130Cotton, E.A., Wilkinson, G., Gaus, P.L., (1987) Basic Inorganic Chemistry, 2nd Ed., , J. Wiley, New YorkHarrison, W.A., (1980) Electronic Structure and the Properties of Solids, , W. H. Freeman & Company, San Francisco, CASze, S.M., (1981) Physics of Semiconductor Devices, , J. Wiley, New YorkStrike, S., Morkoç, H., (1992) J. Vac. Sci. Technol. B, 10, p. 1237Liu, A.Y., Cohen, M.L., (1990) Phys. Rev. B, 41, p. 10727Morkoç, H., Strike, S., Gao, G.B., Lin, M.E., Sverdlov, B., Burns, M., (1994) J. Appl. Phys., 76, p. 1363Torriak, J.T., Pan Kove, J.I., Iliopoulos, E., Ng, H.M., Moustakas, T.D., (1998) Appl. Phys. Lett., 72, p. 244Katz, R.N., (1980) Science, 208, p. 841Vossen, J.L., Kern, W., (1978) Thin Film Processes, , Academic, New YorkSilicon Based Ceramics (1995) Mater. Res. Bull., 20Remy, J.C., Hantzpergue, J.J., (1975) Thin Solid Films, 30, p. 197(1975) Thin Solid Films, 30, p. 205Martok, D., Boyd, K.J., Rabalais, J.W., (1995) Int. J. Mod. Phys., 9, p. 3527Farrer, R.G., (1969) Solid State Commun., 7, p. 685Nagai, H., Niimi, T., (1968) J. Electrochem. Soc., 115, p. 671Bagratishvili, G.D., Dzhanelidze, R.B., Kurdiani, N.I., Saksaganskii, D.V., (1976) Phys. Status Solidi A, 36, p. 73Chambouleyron, I., (1985) Appl. Phys. Lett., 47, p. 117Maissel, L.I., Glang, R., (1970) Handbook of Thin Film Technology, , McGraw-Hill, New YorkKlabunde, K.J., (1985) Thin Films from Free Atoms and Particles, , Academic, New YorkMcTaggart, F.K., (1967) Plasma Chemistry in Electrical Discharges, , Elsevier, AmsterdamHollahan, J.R., Bell, A.T., (1974) Techniques and Applications of Plasma Chemistry, , Wiley Interscience, New YorkMorosanu, C.-E., (1980) Thin Solid Films, 65, p. 171Kapoor, V., Stein, H., Silicon Nitride Thin Insulating Films (1983) Proceedings of the Electrochemical Society, 8-83. , The Electrochemical Society, Pennington, NJAdams, A.C., (1988) Plasma Deposited Thin Films, , edited by J. Mort and F. Jansen CRC, Boca Raton, FL, Chap. 5Proc. Int Conf. Amorphous Semiconductors (1996) J. Non-Cryst. Solids, 198-200Marques, F.C., Chambouleyron, I., Evangelisti, F., (1989) J. Non-Cryst. Solids, 114, p. 561Xu, J., Miyazaki, S., Hirose, M., (1996) Jpn. J. Appl. Phys., Part 1, 35, p. 2043Xu, J., Chen, K., Feng, D., Miyasaki, S., Hirose, M., (1996) J. Appl. Phys., 80, p. 4703Alford, D.B., Meiners, L.G., (1987) J. Electrochem. Soc., 134, p. 979Johnson, G.A., Kapoor, V.J., (1991) J. Appl. Phys., 69, p. 3616Weissmantel, C., (1976) Thin Solid Films, 32, p. 11Mogab, C.J., Lugujjo, E., (1976) J. Appl. Phys., 47, p. 1302Stephens, A.W., Vossen, J.L., Kern, W., (1976) J. Electrochem. Soc., 123, p. 303Kominiak, G.J., (1975) J. Electrochem. Soc., 122, p. 1271Chen, P.C.Y., (1974) Thin Solid Films, 21, p. 245Rothemund, W., Fritzche, C.R., (1973) Thin Solid Films, 15, p. 199Cordes, L.F., (1967) Appl. Phys. Lett., 11, p. 383Hu, S.M., Kerr, D.R., Gregor, L.V., (1967) Appl. Phys. Lett., 10, p. 97Pompei, J., (1967) Proceedings of the Symposium on Deposition Thin Films Sputter, 2nd Ed., p. 127. , University of Rochester Press, Rochester, NYHantzpergue, J.J., Doucet, Y., Pauleau, Y., Remy, J.C., (1975) Ann. Chim., 10, p. 211. , ParisZanatta, A.R., Chambouleyron, I., (1993) Phys. Rev. B, 48, p. 4560Vilcarromero, J., Marques, F.C., (1994) J. Appl. Phys., 76, p. 615Doo, V.Y., Nichols, D.R., Silvey, G.A., (1966) J. Electrochem. Soc., 113, p. 1279Doo, V.Y., Kerr, D.R., Nichols, D.R., (1968) J. Electrochem. Soc., 115, p. 61Roenigk, F., Jensen, K.F., (1987) J. Chem. Soc., 134, p. 1777Zhang, S.L., Wang, J.T., Kaplan, W., Östling, M., (1992) Thin Solid Films, 213, p. 182Zhou, N.S., Fujita, S., Sasaki, A., (1985) J. Electron. Mater., 14, p. 55Thiel, J.A., Hattangady, S.V., Lucovsky, G., (1992) J. Vac. Sci. Technol. A, 10, p. 719Lee, K.R., Sundaram, K.B., Malocha, D.C., (1993) J. Mater. Sci., 4, p. 283Samuelson, G.M., Mar, K.M., (1982) J. Electrochem. Soc., 129, p. 1773Nguyen, V.S., Lanford, W.A., Reiger, A.L., (1986) J. Electrochem. Soc., 133, p. 970Schuh, H., Schlosser, T., Bissinger, P., Schmidbaur, H., (1993) Z. Anorg. Allg. Chem., 619, p. 1347Dahlhaus, J., Jutzi, P., Frenck, H.J., Kulisch, W., (1993) Adv. Mater., 5, p. 377Flemish, J.R., Pfeffer, R.L., (1993) J. Appl. Phys., 74, p. 3277Boudreau, M., Boumerzoug, M., Mascher, P., Jessop, P.E., (1993) Appl. Phys. Lett., 63, p. 3014Ahn, J., Suzuki, K., (1994) Appl. Phys. Lett., 64, p. 3249Glockling, F., (1969) The Chemistry of Ge, , Academic, LondonJohnson, W.C., Morey, G.H., Kott, A.E., (1932) J. Am. Chem. Soc., 54, p. 4278Storr, R., Wright, A.N., Winkler, C.A., (1962) Can. J. Chem., 40, p. 1296Johnson, W.C., (1930) J. Am. Chem. Soc., 52, p. 5160Schwarz, R., Shenk, P.W., (1930) Chem. Ber., 63, p. 296Juza, R., Hahn, H., (1939) Z. Anorg. Allg. Chem., 241, p. 32Leslie, W., Carroll, K.G., Fisher, R.M., (1952) J. Met., 4, p. 204Johnson, O., (1956) Usp. Khim., 25, p. 1Juza, R., Hahn, H., (1940) Z. Anorg. Allg. Chem., 244, p. 124Gritzenko, V.A., (1975) Prog. Surf. Sci., 28, p. 387Young, A.B., Rosenberg, J.J., Szendro, I., (1987) J. Electrochem. Soc., 134, p. 2867Pande, K.P., Shen, C.C., (1982) Appl. Phys. A: Solids Surf., 28, p. 123Liu, A.Y., Cohen, M.L., (1989) Science, 245, p. 841Cuomo, J.J., Leary, P.A., Yu, D., Reuter, W., Frisch, M., (1979) J. Vac. Sci. Technol., 16, p. 229Torn, C.J., Silverstein, J.M., Judy, J.H., Chang, C., (1993) J. Mater. Res., 5, p. 2490Chen, M.Y., Lin, D., Lin, X., David, V.P., Chung, Y.W., Wong, M.S., Sproul, W.D., (1993) J. Vac. Sci. Technol. A, 11, p. 521Niu, C., Lu, Y.Z., Lieber, C.M., (1993) Science, 261, p. 335Fujimoto, F., Ogata, K., (1993) Jpn. J. Appl. Phys., Part 2, 32, pp. L420Yel, T.A., Lin, C.L., Silverstein, J.M., Judy, J.H., (1993) J. Magn. Magn. Mater., 120, p. 314Kaufman, J.H., Metin, S., Saperstein, D.D., (1989) Phys. Rev. B, 39, p. 13053Amir, O., Kalish, R., (1991) J. Appl. Phys., 70, p. 4958Franceschini, D.F., Achete, C.A., Freire Jr., F.L., Mariotto, G., (1992) Novel Forms of Carbon, p. 481. , edited by C. L. Renschler, J. J. Pouch, and D. M. Cox MRS, Pittsburg, PAMansour, A., Ugolini, D., (1993) Phys. Rev. B, 47, p. 10201Seth, J., Padiyath, R., Babu, S.V., (1994) Diamond Relat. Mater., 3, p. 210Franceschini, D.F., Achete, C.A., Freire Jr., F.L., (1992) Appl. Phys. Lett., 60, p. 3229Freire Jr., F.L., Franceschini, D.F., Achete, C.A., (1995) Phys. Status Solidi B, 192, p. 493Maya, L., (1993) J. Vac. Sci. Technol. A, 11, p. 604Lima, R.S., Dionisio, P.H., Schreiner, W.H., (1991) Solid State Commun., 79, p. 395Gordon, R.G., Hoffman, D.M., Riaz, U., (1992) Chem. Mater., 4, p. 68Kieffer, R., Fister, D., Schoof, H., Mauer, K., (1973) Powder Metall., 5, p. 1Kieffer, R., Ettmayer, P., (1974) High Temp.-High Press., 6, p. 253Schintlmeister, W., Pacher, O., (1974) Metall., 28, p. 690Powell, C.F., Oxley, J.H., Blocher Jr., J.M., (1966) Vapor Deposition, , Wiley, New York, Chap. 11Takanashi, T., Itoh, H., (1977) J. Electrochem. Soc., 124, p. 797Wakefield, G.F., Blocher Jr., J.M., Chemical Vapor Deposition (1975) 5th International Conference, p. 634. , Electrochemical Society, Pennington, NJRand, M.J., Roberts, J.F., (1968) J. Electrochem. Soc., 115, p. 423Hirayama, M., Shohno, K., (1975) J. Electrochem. Soc., 122, p. 1671Chu, T.L., Kelm Jr., R.W., (1975) J. Electrochem. Soc., 122, p. 995Lewis, D.W., (1970) J. Electrochem. Soc., 117, p. 978Kim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Ettenberg, N., Gilbert, S.L., (1973) J. Appl. Phys., 44, p. 292Manasevit, H.M., Erdmann, F.M., Simpson, W.I., (1971) J. Electrochem. Soc., 118, p. 1864Ilegems, N., (1970) J. Cryst. Growth, 13-14, p. 360Chu, T.L., (1971) J. Electrochem. Soc., 118, p. 1200Thompson, M.J., (1984) The Physics of Hydrogenated Amorphous Silicon I-Topics in Applied Physics, 55. , edited by J. D. Joannopoulos and G. Lucovsky Springer, New York, and references thereinBrodie, I., Lament Jr., L.T., Myers, D.O., (1968) J. Vac. Sci. Technol., 6, p. 124Anderson, D.A., Moddel, G., Paesler, M.A., Paul, W., (1979) J. Vac. Sci. Technol., 16, p. 906Ross, R.C., Messier, R., (1981) J. Appl. Phys., 52, p. 5329Moustakas, T.D., (1982) Sol. Energy Mater., 8, p. 187Tardy, J., Meaudre, R., (1983) Philos. Mag. B, 48, p. 73Marques, F.C., Chambouleyron, I., (1989) Proceedings of the 9th European Photovoltaic Solar Energy Conference, p. 1042. , edited by W. Palz, G. T. Wrixon, and P. Helm Kluwer Academic, DordrechtAntoine, A., Drevillon, B., Roca, P., (1985) J. Non-Cryst. Solids, 77-78, p. 769Karg, F.H., Bohm, H., Pierz, K., (1989) J. Non-Cryst. Solids, 114, p. 477Turner, W.A., Jones, S.J., Pang, D., Bateman, B.F., Chen, J.H., Li, Y.M., Marques, F.C., Theye, M.L., (1990) J. Appl. Phys., 67, p. 7430Vilcarromero, J., Marques, F.C., (1995) Phys. Status Solidi B, 192, p. 543Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University Press, Cambridge, and references thereinPaul, W., Anderson, D.A., (1981) Sol. Energy Mater., 5, p. 229Moustakas, T.D., Maruska, H.P., Friedman, R., Hicks, M., (1983) Appl. Phys. Lett., 43, p. 368Moustakas, T.D., Maruska, H.P., (1983) Appl. Phys. Lett., 43, p. 1037Hardie, D., Jack, K.H., (1957) Nature (London), 180, p. 332Grun, R., (1979) Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem., 35, p. 800Robertson, J., (1981) Philos. Mag. B, 44, p. 215Coleman, M.V., Thomas, D.J., (1968) Phys. Status Solidi, 25, p. 241Aiyama, T., Fukunaga, T., Nihara, K., Hirai, T., Suzuki, K., (1979) J. Non-Cryst. Solids, 33, p. 131Misawa, M., Fukunawa, T., Nihara, K., Hirai, T., Suzuki, K., (1979) J. Non-Cryst. Solids, 33, p. 135Mobilio, S., Filipponi, A., (1987) J. Non-Cryst. Solids, 97-98, p. 365Ruddlesden, S.N., Popper, P., (1958) Appl. Sci. Res., 11, p. 465Boscherini, F., Filipponi, A., Pascarelli, S., Evangelisti, F., Mobilio, S., Marques, F.C., Chambouleyron, I., (1989) Phys. Rev. B, 39, p. 8364Filipponi, A., Fiorini, P., Evangelisti, F., Mobilio, S., (1987) MRS Symposium Proceedings, 95, p. 305. , edited by A. Madan, M. Thompson, D. Adler, and Y. Hamakawa MRS, Pittsburgh, PARobertson, J., (1991) Philos. Mag. B, 63, p. 47. , Note that in this paper the notation a-SiNx is used instead of a-Si1-xNx. A review of theoretical calculations on the electronic structure of a-Si1-xNx is found in this articleKärcher, R., Ley, L., Johnson, R.L., (1984) Phys. Rev. B, 30, p. 1896Guraya, M.M., Ascolani, H., Zampieri, G., Dias Da Silva, J.H., Cantão, M.P., Cisneros, J.I., (1994) Phys. Rev. B, 49, p. 13446Makler, S., Rocha, G.M., Anda, E.V., (1990) Phys. Rev. B, 41, p. 5857Zanatta, A.R., Chambouleyron, I., (1996) Phys. Status Solidi B, 193, p. 399Zanatta, A.R., Landers, R., De Castro, S.G.C., Kleiman, G.G., Chambouleyron, I., Grilli, M.L., (1995) Appl. Phys. Lett., 66, p. 1258Comedi, D., Zanatta, A.R., Alvarez, F., Chambouleyron, I., (1996) J. Non-Cryst. Solids, 198-200, p. 136Robertson, J., (1994) Philos. Mag. B, 69, p. 307Warren, W.L., Kanicki, J., Robertson, J., Poindexter, E.H., McWhorter, P.J., (1993) J. Appl. Phys., 74, p. 4034Chambouleyron, I., Marques, F.C., Cisneros, J.I., Alvarez, F., Moehlecke, S., Losch, W., Pereyra, I., (1985) J. Non-Cryst. Solids, 77-78, p. 1309Honma, I., Kawai, H., Komiyama, H., Tanaka, K., (1989) J. Appl. Phys., 65, p. 1074Brodsky, M.H., Title, R.S., (1969) Phys. Rev. Lett., 23, p. 581Stutzmann, M., Stuke, J., Dersch, H., (1983) Phys. Status Solidi B, 105, p. 265Chen, G., Zhang, F., Jia, W., Chen, W., (1989) Phys. Status Solidi A, 114, p. 1170Yokomichi, H., (1995) Materials Science Forum, 196-201, p. 1291. , Trans. Tech. Publications, SwitzerlandMin, H., Ueda, S., Ishii, N., Kumada, M., Shimizu, T., (1996) J. Non-Cryst. Solids, 198-200, p. 375Zanatta, A.R., Chambouleyron, I., (1992) Phys. Rev. B, 46, p. 2119Zanatta, A.R., Chambouleyron, I., (1994) Braz. J. Phys., 24, p. 434Zhou, J.-H., Yamaguchi, K., Yamamoto, Y., Shimizu, T., (1993) J. Appl. Phys., 74, p. 5086Cardona, M., Ley, L., (1978) Photoemission in Solids I, General Principles, , edited by M. Cardona and L. Ley Springer, Berlin, Chap. 1Honma, I., Kawai, H., Komiyama, H., Tanaka, K., (1986) Appl. Phys. Lett., 50, p. 276Liu Chun, R., Sun Zhao, Q., Xu Jing, Z., Zheng, X., (1991) J. Phys. D, 24, p. 2215Zanatta, A.R., Chambouleyron, I., Santos, P.V., (1996) J. Appl. Phys., 79, p. 433Barrio, R.A., Carriço, A.S., Marques, F.C., Sanjurjo, J., Chambouleyron, I., (1989) J. Phys.: Condens. Matter, 1, p. 69Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., Czubatyj, W., (1983) Phys. Rev. B, 28, p. 3234Zanatta, A.R., Freire Jr., F.L., Chambouleyron, I., (1993) J. Phys.: Condens. Matter, 5, pp. A313Smith, A.L., Angelotti, N.C., (1959) Spectrochem. Acta, 15, p. 412Lucovsky, G., (1979) Solid State Commun., 29, p. 571Rankin, D.W.H., J. Chem. Soc. A, 1926, p. 1969Gridewell, C., Rankin, D.W.H., Robiette, A.G., J. Chem. Soc. A, 2935, p. 1970Pauling, L., (1960) The Nature of the Chemical Bond, 3rd Ed., , Cornell University Press, New YorkZanatta, A.R., Chambouleyron, I., (1995) Solid State Commun., 95, p. 270Smith Jr., J.E., Brodsky, M.H., Crowder, B.L., Natham, M.I., Pinczuk, A., (1971) Phys. Rev. Lett., 26, p. 642Lannin, J.S., (1987) J. Non-Cryst. Solids, 97-98, p. 39Paul, W., Paul, D.K., Von Roedern, B., Blake, J., Oguz, S., (1981) Phys. Rev. Lett., 46, p. 1016Marques, F.C., Lacerda, R.G., Lima, M.M., Jr, Vilcarromero, J., (1995) Phys. Status Solidi B, 192, p. 549Sanderson, R.T., (1976) Chemical Bonds and Bond Energy, , Academic, New York, Chap. 2Hasegawa, S., He, L., Inokuma, T., Kurata, K., (1992) Phys. Rev. B, 46, p. 12478Ingo, G.M., Zacchetti, N., Della Sala, D., Coluzza, C., (1989) J. Vac. Sci. Technol. A, 7, p. 3048Yin, Z., Smith, F.W., (1990) Phys. Rev. B, 42, p. 3658Bolmont, D., Bischoff, J.L., Lutz, F., Kubler, L., (1991) Appl. Phys. Lett., 59, p. 2742Wagner, C.D., (1975) Faraday Discuss. Chem. Soc., 60, p. 291Wagner, C.D., (1978) Handbook of X-Ray and Ultraviolet Photoemission Spectroscopy, , edited by D. Briggs Heyden & Son Ltd., LondonWilliams, A.R., Lang, N.D., (1978) Phys. Rev. Lett., 40, p. 954Ley, L., Kärcher, R., Johnson, R.L., (1984) Phys. Rev. Lett., 53, p. 710Urbach, F., (1953) Phys. Rev., 92, p. 1324Curtins, H., Favre, M., (1988) Amorphous Silicon and Related Materials, p. 329. , edited by H. Fritzsche World Scientific, SingaporeTauc, J., Grigorovici, R., Vancu, A., (1966) Phys. Status Solidi, 15, p. 627Tsu, R., Menna, P., Mahan, H., (1987) Sol. Cells, 21, p. 189Hasegawa, S., Tsukao, T., Zalm, P.C., (1987) J. Appl. Phys., 61, p. 2916Bell, F.G., Ley, L., (1988) Phys. Rev. B, 37, p. 8383Kurik, M.V., (1971) Phys. Status Solidi A, 8, p. 9Tiedje, T., Cebulka, J.M., Morel, D.L., Abeles, B., (1981) Phys. Rev. Lett., 46, p. 1425Cody, G.D., Tiedje, T., Abeles, B., Brooks, B., Goldstein, Y., (1981) Phys. Rev. Lett., 47, p. 1480Cody, G.D., (1984) Semiconductors and Semimetals, 21 B, p. 11. , edited by J. I. Pankove Academic, New YorkMahan, A.H., Menna, P., Tsu, R., (1987) Appl. Phys. Lett., 51, p. 1167Aljishi, S., Cohen, J.D., Jin, S., Ley, L., (1990) Phys. Rev. Lett., 64, p. 2811Howard, J.A., Street, R.A., (1991) Phys. Rev. B, 44, p. 7935Redfield, D., (1963) Phys. Rev. B, 130, p. 914(1967) Phys. Rev. B, 140, p. 2056Hopfield, J.J., (1968) Comments Solid State Phys., 1, p. 16Dow, J.D., Redfield, D., (1970) Phys. Rev. B, 1, p. 3358Sumi, H., Toyozawa, Y., (1972) J. Phys. Soc. Jpn., 31, p. 342Dow, J.D., Redfield, D., (1972) Phys. Rev. B, 5, p. 594Skettrup, J., (1978) Phys. Rev. B, 18, p. 2622Abe, S., Toyozawa, Y., (1981) J. Phys. Soc. Jpn., 50, p. 2185Schreiber, M., Toyozawa, Y., (1982) J. Phys. Soc. Jpn., 51, p. 1528(1982) J. Phys. Soc. Jpn., 51, p. 1537(1982) J. Phys. Soc. Jpn., 51, p. 1544Singh, J., Madhukar, A., (1982) Solid State Commun., 41, p. 241Redfield, D., (1982) Solid State Commun., 44, p. 1347Soukoulis, C.M., Cohen, M.H., Economou, E., (1984) Phys. Rev. Lett., 53, p. 616John, S., Soukoulis, C.M., Cohen, M.H., Economou, E., (1986) Phys. Rev. Lett., 57, p. 1777Bar-Yam, Y., Adler, D., Joannopoulos, J.D., (1986) Phys. Rev. Lett., 57, p. 467Smith, Z.E., Wagner, S., (1987) Phys. Rev. Lett., 59, p. 688Chan, C.T., Louie, S.G., Phillips, J.C., (1987) Phys. Rev. B, 35, p. 2744Silver, M., Pautmeier, L., Bassler, H., (1989) Solid State Commun., 72, p. 177John, S., Grein, C.H., (1990) Rev. Solid State Sci., 4, p. 1Branz, H.M., Silver, M., (1990) Phys. Rev. B, 42, p. 7420Kemp, M., Silver, M., (1993) Appl. Phys. Lett., 62, p. 1487Frova, A., Selloni, A., (1985) Tetrahedrally Bonded Amorphous Semiconductors, p. 271. , edited by D. Adler and H. Fritzche Plenum, New YorkSkumanich, A., Frova, A., Amer, N.M., (1985) Solid State Commun., 54, p. 597Zanatta, A.R., Chambouleyron, I., (1996) Phys. Rev. B, 53, p. 3833Jackson, W.B., Kelso, S.M., Tsai, C.C., Allen, J.W., Oh, S.J., (1985) Phys. Rev. B, 31, p. 5187Zanatta, A.R., Mulato, M., Chambouleyron, I., unpublishedBrodsky, M.H., (1975) Light Scattering in Solids, 8, p. 208. , edited by M. Cardona, Topics in Applied Physics Springer, BerlinWakag, M., Ogana, K., Nakano, A., (1994) Phys. Rev. B, 50, p. 10666Morell, J., Katiyar, R.S., Weisz, S.Z., Jia, H., Shinar, J., Balberg, I., (1995) J. Appl. Phys., 78, p. 5120Bustarret, E., Morgado, E., (1987) Solid State Commun., 63, p. 581Bustarret, E., Vaillant, F., Hepp, B., (1988) Mater. Res. Soc. Symp. Proc., 118, p. 123Schubert, M.B., Mohring, H.D., Lotter, E., Bauer, G.H., (1989) IEEE Trans. Electron Devices, 36, p. 2863Yashiro, T., (1972) J. Electrochem. Soc., 119, p. 781Marques, F.C., (1989), PhD thesis, UNICAMP, Brazil, April (unpublished)Marques, F.C., Chambouleyron, I., (1991) MRS Symposia Proceedings, 209, p. 555. , Defects in Materials, edited by P. D. Bristowe, J. E. Epperson, J. E. Griffith, and Z. Lilienthal-Weber Materials Research Society, PittsburghTakano, Y., Sato, T., Kitaoka, N., Ozaki, H., (1983) J. Non-Cryst. Solids, 55, p. 325Paul, W., Jones, S.J., Turner, W.A., (1991) Philos. Mag. B, 63, p. 247Bagratishvili, G.D., Berozashvili, Yu.N., Dzhanelidze, M.B., Dzhanelidze, R.B., (1987) Sov. Phys. Dokl., 32, p. 652Mott, N.F., (1967) Adv. Phys., 16, p. 49Knotek, M.L., Pollak, M., Donovan, T.M., Kurtzman, H., (1973) Phys. Rev. Lett., 30, p. 835Bagratishvili, G.D., Berozashvili, Yu.N., Dzhanelidze, M.B., Dzhanelidze, R.B., (1990) Sov. Phys. Semicond., 24, p. 618Kohn, W., (1957) Solid State Physics, 5. , edited by F. Seitz and D. Turnbull Academic, New York(1992) The Properties of Natural and Synthetic Diamond, , edited by J. E. Field Academic, LondonYatsurugi, Y., Akiyama, N., Endo, Y., Nozaki, T., (1973) J. Electrochem. Soc., B120, p. 975Pavlov, P.V., Zorin, E.I., Tetelbaum, D.I., Khokhlov, A.F., (1976) Phys. Status Solidi A, 35, p. 11Zorin, E.I., Pavlov, P.V., Telel'baum, D.I., (1968) Sov. Phys. Semicond., 2, p. 11Campbell, A.B., Mitchell, J.B., Schewchun, J., Thompson, D.A., Davies, J.A., (1975) Can. J. Phys., 53, p. 303Brower, K.L., (1982) Phys. Rev. B, 26, p. 6040Stein, H.J., (1986) MRS Symposia Proceedings, 59, p. 523. , Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook Materials Research Society, Pittsburgh, PABerg Rasmussen, F., Jones, R., Öberg, S., (1994) Phys. Rev. B, 50, p. 4378Ammerlaan, C.A., (1980) Proceeding 59, p. 81. , Defects and Radiation Effects in Semiconductors, edited by R. R. Hasiguti Institute of Physics, LondonDeLeo, G.G., Fowler, W.B., Watkins, G.D., (1984) Phys. Rev. B, 29, p. 3193Pantelides, S.T., (1974) Solid State Commun., 14, p. 1255Schultz, P.A., Messmer, R.P., (1986) Phys. Rev. B, 34, p. 2532Spear, W., LeComber, P., (1975) Solid State Commun., 17, p. 1193(1976) Philos. Mag., 33, p. 935Robertson, J., (1979) Philos. Mag., 40, p. 31Street, R.A., (1982) Phys. Rev. Lett., 49, p. 1187Phillips, J.C., (1979) Phys. Rev. Lett., 42, p. 1151Robertson, J., Powell, M.J., (1984) Appl. Phys. Lett., 44, p. 415Shimizu, T., Kidoh, H., Morimoto, A., Kumeda, M., (1989) Jpn. J. Appl. Phys., Part 1, 28, p. 586Chambouleyron, I., Zanatta, A.R., (1993) Appl. Phys. Lett., 62, p. 58Chambouleyron, I., Campomanes, R., (1996) Phys. Rev. B, 53, p. 12566Zanatta, A.R., (1995), PhD thesis, Unicamp, May (unpublished)Campomanes, R., (1994), MSc dissertation, Unicamp, September (unpublished)Drüsedau, T., Schröder, B., Oechsner, H.,
The Influence Of The Available Scattering-vector Range On The Retrieval Of Particle-size Distributions From Small-angle Scattering Intensity Data
Full text linkThe determination of the particle-size distribution [D(r)J from small-angle scattering intensity data is discussed. The influence of the maximum available scattering vector hmax on D(r) retrieval is investigated with the help of numerical experiments with previously known solutions. The numerical corrector method provides a good answer even in cases where hmax is much smaller than those values necessary with other retrieval methods. © 1997 International Union of Crystallography all rights reserved.305 PART 2808810Fedorova, I.S., Schmidt, P.W., (1978) J. Appl. Cryst., 11, pp. 405-411Glatter, O., (1977) J. Appl. Cryst., 10, pp. 415-421Glatter, O., (1980) J. Appl Cryst., 13, pp. 7-11Glatter, O., Kratky, O., (1982) Small Angle X-ray Scattering, , New York: Academic PressGuinier, A., Fournet, A., (1955) Small Angle Scattering of X-rays, , New York: John WileyMulato, M., Chambouleyron, I., (1996) J. Appl. Cryst., 29, pp. 29-3
Compact Hydrogenated Amorphous Germanium Films By Ion-beam Sputtering Deposition
No full textWe explore reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge:H films. It is shown that compact a-Ge:H films can be obtained by IBSD at substrate temperatures between 180°C and 220°C by minimizing the ion bombardment of the growth surface. The infrared (IR) spectra of the best materials, as far as device applications are concerned, so-far obtained show no poly-hydride nor surface-like contributions to the Ge-H dipole vibration bands. Positron annihilation (PA) spectroscopy studies of these samples reveal smaller valence (S) parameters and larger core (W) parameters as compared with the films grown under less-favorable conditions, which indicate a relatively smaller concentration of the largest voids, the annihilation process being controlled mainly by trapping at small vacancy clusters or monovacancies. Similar IR and PA measurements on in situ ion-bombarded IBSD and RF-sputtered samples indicate that ion irradiation is a main factor in large void formation. © 2000 Elsevier Science B. V. All rights reserved.266-269 B713716Karg, F.H., Böhm, H., Pierz, K., (1989) J. Non-Cryst. Solids, 114, p. 477Turner, W.A., Jones, S.J., Pang, D., Bateman, B.E., Chen, J.H., Li, Y.M., Marques, F.C., Theye, M.L., (1990) J. Appl. Phys., 67, p. 7430Marques, F.C., Chambouleyron, I., (1989) Proceedings of the Nineth ec Solar Energy Conference, p. 1042. , W. Palz, G.T. Wrixon, P. Helm (Eds.), Kluwer, DordrechtDrüsedau, T., Schröder, B., (1994) J. Appl. Phys., 75, p. 2864Peng, Z.L., Comedi, D., Dondeo, F., Chambouleyron, I., Simpson, P.J., Mascher, P., (1999) Physica B, 274, p. 579Biersack, J.P., Haggmark, L.G., (1980) Nucl. Instrum, and Meth., 174, p. 257Yehoda, J.E., Yang, B., Vedam, K., Messier, R., (1988) J. Vac. Sci. Technol. A, 6, p. 1631Origo, F., Hammer, P., Comedi, D., Chambouleyron, I., (1998) Mater. Res. Soc. Symp. Proc., 507, p. 477Bhan, M.K., Malhotra, L.K., Kashyap, S.C., (1989) J. Appl. Phys., 65, p. 241Schultz, P.J., Lynn, K.G., (1988) Rev. Mod. Phys., 60, p. 701Saarinen, K., Laine, T., Skog, K., Mäkinen, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Pessa, M., (1996) Phys. Rev. Lett., 77, p. 340
STUDY OF ANNEALED AMORPHOUS HYDROGENATED FILMS BY ELASTIC RECOIL DETECTION ANALYSIS
No full textHydrogen out-diffusion in amorphous hydrogenated films, a-Ge:D, a-C:H and a-C:H(N) films, was studied by using elastic recoil detection analysis (ERDA). The a-Ge:D films were deposited onto Si substrates at 210-degrees-C by rf-sputtering in an atmosphere of argon and deuterium. The a-C:H and a-C:H(N) films produced by plasma decomposition of a methane-nitrogen mixture, were deposited onto Si substrates at room-temperature. The a-Ge:D samples were annealed in nitrogen atmosphere at temperatures between 200 and 400-degrees-C and the carbon films in a vacuum furnace, with the temperature ranging from 300 to 700-degrees-C. The total hydrogen (deuterium) content and the concentration depth-profiles were determined by ERDA using helium beams of 2.2 and 3.0 MeV for hydrogen and deuterium profiles, respectively. Two kinds of hydrogen motion coexist in a-Ge:D films: a fast one, probably due to the presence of a network of interconnected voids, and a slower one, due to the dispersive-like diffusion of atomic deuterium in the amorphous skeleton. In a-C:H and a-C:H(N) films only the fast process was observed. A correlation between hydrogen loss and structural modifications of annealed carbon films was also made
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