1,721,131 research outputs found
High-Efficiency GaN Doherty Power Amplifier based on Inverse Class-F Operation
Get PDFThis paper presents the design and characterization of a Doherty power amplifier based on high-efficiency continuous inverse class-F individual amplifiers. The prototype achieves a saturated output power in excess of 42.5dBm, with efficiency higher than 70% and 50%, at saturation and 6dB output back-off respectively, over the frequency band 1.45GHz-1.75GHz (18% fractional band). The good agreement between simulations and measurements and the comparison with the state of the art at similar frequencies demonstrate the potential of the application of harmonic tuning strategies to the Doherty architecture, despite the challenge of maintaining wideband operation
Electronics for Microwave Backhaul
No full textThe book presents an overview of the electronics of mobile network backhaul. Infrastructure planning, architecture evolution, digital controls, and countermeasures, highlighting the building blocks of specific backhaul features. Tx and Rx design and antenna requirements and covered while examining the overall construction of the microwave radio hardware blocks. Single blocks are explored: the antenna, the analog transmitter and receiver, and the modem, recalling the most important aspects of transport networks and microwave link dimensioning. Essential theory is provided for each hardware block with an emphasis on present solutions
Assessment of the Performance of Inverse Class-F Power Amplifiers in a Discrete Doherty Architecture
Get PDFThis work presents an assessment, at simulation and experimental levels, of the performance of inverse class-F power amplifiers in a Doherty architecture. Two connectorized amplifier modules, designed for standalone operation, are adopted to construct a quasi-balanced Doherty architecture exploiting 3-dB 90° hybrid couplers at the input and output to demonstrate the concept. The Doherty architecture shows competitive performance at 1.8 GHz, with 43 dBm output power and around 60% efficiency from saturation to 6 dB output power back-off. The performance is in line with the state of the art of integrated load-modulated amplifiers, demonstrating the validity of the approach
Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19 dB Gain Over a 41% Bandwidth
Get PDFThis paper presents the design of a Doherty power amplifier for 5G applications in the FR1 5G bands, implemented with WIN's 150nm GaN/SiC HEMT technology. The design aims to achieve real-case scenario performance for power and gain while covering the full N77 & N79 bands, which corresponds to a 41% bandwidth. This is accomplished by developing a two-stage design with an optimized combiner architecture. The fabricated chip achieves 37dBm of saturated output power, 19 dB of linear gain and a minimum PAE of 20% over a 6 dB back-off range in the 3.3 GHz-5GHz band, achieving state-of-the-art performance for a multi-stage Doherty architecture
Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications
Get PDFDesign and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul applications, exploits a TriQuint GaN foundry process. Large signal measurements exhibit power gain higher than 10 dB and 7 dB in the lower and higher bands respectively, and saturated output power of 34.7 dBm, in a 15% band around the two center frequencie
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