50,263 research outputs found
Assessment of Self-Archiving in Institutional Repositories: Depositorship and Full-Text Availability
No full textThis research evaluates the success of open access self-archiving in several well-known institutional repositories. Two assessment factors have been applied to examine the current practice of self-archiving: depositorship and the availability of full text. This research discovers that the rate of author self-archiving is low and that the majority of documents have been deposited by a librarian or administrative staff. Similarly, the rate of full-text availability is relatively low, except for Australian repositories. By identifying different practices of self-archiving, repository managers can create new strategies for the operation of their repositories and the development of archiving policies
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Cyclic Tests of Four Two-Story Narrow Steel Plate Shear Walls. Part 1: Analytical Studies and Specimen Design
No full textA Multi-Variable Fuzzy Controller Design For An Optical Disk File Compound Actuator Servo
No full textHigh-quality NiGe/Ge diodes for Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source–drain leakage. Here, we show that electrodeposited Ni–Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at ∼0.52 eV (indicating a hole barrier height of ∼0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Comparison of veterinary medical education systems between Taiwan and the United States.
No full textInformation Literacy and Librarian-Faculty Collaboration: A Model for Success:
No full textIn the age of information explosion and technological advancement, issues of information storage, organization, access, and evaluation have become necessarily important in our societies. Addressing issues of information literacy and designing how they can be best integrated in students' learning process are of critical importance. Library professionals in the United States, particularly in the academia, have realized the importance of information literacy and have attempted in various ways to address these issues. The ultimate goal is to make information literacy an integral part of the academic curriculum, thus helping students to succeed not only during their years in college but also for their lifelong career choices. This article will look at ways of how information literacy can best be incorporated into students' academic experience, and how this process can make students' learning meaningful and successful. Specifically, the author will examine the model of librarian-faculty collaboration in integrating information literacy into the curriculum, as demonstrated in the Ohio Five Colleges' Information Literacy Program.Publisher version of this article is available at: http://www.white-clouds.com/iclc/cliej/cl24.ht
Factors to Assess Self-Archiving in Institutional Repositories
No full textThis paper proposes a group of factors that may be used to assess the success of open access self-archiving. It concentrates on self-archiving in institutional repositories. The authors emphasize the importance of examining content materials, particularly the availability of full text versus abstracts and the deposits archived by authors versus by others.Peer reviewe
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