30 research outputs found
Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades
No full textSophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented
Planar Pixel Sensors for the ATLAS tracker upgrade at HL-LHC
No full textThe ATLAS Planar Pixel Sensor R&D Project is a collaboration of 17 institutes and more than 80 scientists. Their goal is to explore the operation of planar pixel sensors for the tracker upgrade at the High Luminosity-Large Hadron Collider (HL-LHC). This work will give a summary of the achievements on radiation studies with n-in-n and n-in-p pixel sensors, bump-bonded to ATLAS FE-I3 and FE-I4 readout chips. The summary includes results from tests with radioactive sources and tracking efficiencies extracted from test beam measurements. Analysis results of and ( neutron equivalent) irradiated n-in-n and n-in-p modules confirm the operation of planar pixel sensors for future applications.The ATLAS Planar Pixel Sensor R&D Project is a collaboration of 17 institutes and more than 80 scientists. Their goal is to explore the operation of planar pixel sensors for the tracker upgrade at the High Luminosity-Large Hadron Collider (HL-LHC). This work will give a summary of the achievements on radiation studies with n-in-n and n-in-p pixel sensors, bump-bonded to ATLAS FE-I3 and FE-I4 read-out chips. The summary includes results from tests with radioactive sources and tracking efficiencies extracted from test beam measurements. Analysis results of 2x10^1^6n_e_qcm^-^2 and 1x10^1^6n_e_qcm^-^2 (1MeV neutron equivalent) irradiated n-in-n and n-in-p modules confirm the operation of planar pixel sensors for future applications.The ATLAS Planar Pixel Sensor R&D Project is a collaboration of 17 institutes and more than 80 scientists. Their goal is to explore the operation of planar pixel sensors for the tracker upgrade at the High Luminosity-Large Hadron Collider (HL-LHC). This work will give a summary of the achievements on radiation studies with n-in-n and n-in-p pixel sensors, bump-bonded to ATLAS FE-I3 and FE-I4 readout chips. The summary includes results from tests with radioactive sources and tracking efficiencies extracted from test beam measurements. Analysis results of and ( neutron equivalent) irradiated n-in-n and n-in-p modules confirm the operation of planar pixel sensors for future applications
Overview of the ATLAS Insertable B-Layer (IBL) Project
No full textThe upgrades for the ATLAS Pixel Detector will be staged in preparation for high luminosity LHC. The first upgrade for the Pixel Detector will be the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine, foreseen in 2013-14. The new detector, called the Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new, smaller radius beam-pipe at a radius of 3.3 cm. The IBL will require the development of several new technologies to cope with increased radiation and pixel occupancy and also to improve the physics performance through reduction of the pixel size and a more stringent material budget. Two different and promising silicon sensor technologies, planar n-in-n and 3D, are currently under investigation for the IBL. An overview of the IBL project, of the module design and their qualification with particular emphasis on irradiation tests will be presented
Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
No full textIn this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation
Radiation Tolerance of Proton-Irradiated LGADs
No full textLow gain avalanche detectors (LGADs), silicon sensors with intrinsic charge amplification, are being considered as a possible technology for tracking and timing in the high luminosity upgrade of the CERN Large Hadron Collider. In order to work in such an environment, LGADs must be sufficiently radiation hard. The characterisation before and after irradiation of properties, such as gain, charge collection, spatial homogeneity, space charge, and leakage current, is vital for assessing the performance and viability of LGADs. This paper presents the results obtained from the study of LGADs irradiated with 24-GeV/c protons up to a maximum fluence of 10 15 neq/cm 2 . The characterisation was performed mainly by means of the transient current technique with red and infrared laser pulses. It was found that the gain decreases with increasing fluence. At a fluence of 10 15 neq/cm 2 , the charge collected is similar to that of a normal p-i-n diode. Whilst this might be explained by an effective acceptor removal, it was also found that there are clear signs of a double junction in these devices, after irradiation. In addition, the spatial charge collection homogeneity before and after irradiation was evaluated
Multiplication onset and electric field properties of proton irradiated LGADs
No full textThis work focuses on the study of a set of Low Gain Avalanche Detectors (LGADs) produced by CNM, Barcelona (run 7859). Several samples were irradiated with 24-GeV/c protons up to different fluences, ranging between 10 and 10 n/cm. This study concentrates mainly on the LGADs irradiated up to 10 n/cm. The measurements performed to characterise the devices include TCT, edge-TCT, TPA-TCT, and CV/IV measurements. The main goals of these studies were to analyse the voltage required to fully deplete the multiplication layer of LGADs; to measure gain degradation; and to investigate the distribution of the electric field inside the devices after irradiation, as well as the characteristics of the space charge. In order to do so, the measurements were performed under different temperature, read-out and biasing conditions. The obtained data confirm that in highly proton-irradiated LGADs the depletion of the bulk starts from the back electrode, thus shifting the onset of charge multiplication towards higher voltages. This is caused by a space charge sign inversion that is in turn accompanied by the appearance of a triple junction. Furthermore, it was found that annealing causes a recovery of gain along with a reduction of the multiplication-onset voltage towards unirradiated-like values
Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments
No full textPerformance of novel silicon n-in-p planar Pixel Sensors
No full textThe performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here, are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 neq/cm2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency before irradiation, and a high collected charge for a device irradiated at a fluence of 5 x 10**15 neq/cm2 .The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq cm-2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV
Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
No full textHigh voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2
Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam
No full textVarious structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1×10 1 MeV/cm2neq/cm2. Results of measurements with 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented
