1,721,363 research outputs found
Integrazione ottica
No full textThis is a tutorial on physics, characterization, technology and reliability of ion-implanted and proton-exhanged waveguides in lithium niobate, and of the perspective of the fabrication of optical integrated circuit
Techniques For Latch-up Analysis In CMOS ICs Based On Scanning Electron-microscopy
No full textScanningelectronmicroscopytechniques for the characterization of latch-up phenomena in CMOS integrated circuits are reported, critically rewieved and compared with experimental techniques described in the literature, based on infra-red and scanning laser microscopy. Several examples of application are presented to demonstrate the capability of a SEM system for practical layout debugging. Described SEM techniques comprise: (a) sensitivity analysis by means of ebeam induced current, with digital control of the beam position and beam blanking to avoid MOS damaging; (b) identification of latch-up sites in steady-state by Digital Differential Voltage Contrast; (c) study of transient and triggering phenomena and localization of latch-up firing points by means of stroboscopic voltage contrast
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments
No full textDegradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500–550°C. The barrier height decreases from 0.86 to about 0.60 V and then rises to 0.70 V. A striking correlation between metallurgical interdiffusion, growth of intermetallic compounds and electrical degradation is reported
GaAs versus Si: materiali, processi, dispositivi elettronici e circuiti integrati
No full textThis paper is a tutorial on electrical and technological characteristics of compound semiconductor devices and integrated circuits for microwave and millimeter wave application
Modi e meccanismi di guasto dei MESFET al GaAs
No full textThis paper is a tutorial on the reliability of microwave semiconductor devices and in particular of GaAs MESFET
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Two-Dimensional Numerical Simulation of Deep Level Effect in 6H-SiC Buried-Gate JFETs
No full textIn this paper deeplevel eects are investigated in HSiC buried gate nchannel JFETs by means of mea
surements and simulations of the draincurrent ID transients following a gatetosource voltage VGS step
Deep levels present in the JFETs are detected by means of capacitancemode C and currentmode I Deep
Level Transient Spectroscopy DLTS Subsequent simulation of the ID transients allows the energetic and spatial
position of the dierent deep levels to be inferre
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