5,791 research outputs found
Michel Foucault and Judith Butler: troubling Butler's appropriation of Foucault's work
No full textOne of the main influences on Judith Butler‘s thinking has been the work of Michel Foucault. Although this relationship is often commented on, it is rarely discussed in any detail. My thesis makes a contribution in this area. It presents an analysis of Foucault‘s work with the aim of countering Butler‘s representation of his thinking. In the first part of the thesis, I show how Butler initially interprets Foucault‘s project through Nietzschean genealogy, psychoanalysis and Derridean discourse, and how she later develops this interpretation in line with the progress of her own project. In the main part of the thesis, I present an analysis of Foucault‘s thinking in the period from The Archaeology of Knowledge (1969) to The History of Sexuality volume 1 (1976). This analysis focuses on the aspect of his work which has most influenced Butler‘s thinking: namely the notion of a relationship between knowledge, discourse and power. The other issues in his work which Butler addresses—genealogy, the subject, the body, abnormality, and sexuality—are discussed within this framework. I show how, in the early 1970s, Foucault develops the notion of power-knowledge, and sets out a relationship between power-knowledge and discourse which is overlooked by Butler. I argue that Butler interprets Foucaultian power through the notions of repression and social norms, and ignores the concepts of technology and strategy which form a key part of Foucault‘s thinking. I show how, from The Archaeology of Knowledge on, Foucault develops a socio-historical ontology and a genealogy of the subject, both of which are at variance with Butler‘s interpretation of his thinking
Therapeutic uses of inorganic nitrite and nitrate - from the past to the future
No full textPotential carcinogenic effects, blue baby syndrome, and occasional intoxications caused by nitrite, as well as the suspected health risks related to fertilizer overuse, contributed to the negative image that inorganic nitrite and nitrate have had for decades. Recent experimental studies related to the molecular interaction between nitrite and heme proteins in blood and tissues, the potential role of nitrite in hypoxic vasodilatation, and an unexpected protective action of nitrite against ischemia/reperfusion injury, however, paint a different picture and have led to a renewed interest in the physiological and pharmacological properties of nitrite and nitrate. The range of effects reported suggests that these simple oxyanions of nitrogen have a much richer profile of biological actions than hitherto assumed, and several efforts are currently underway to investigate possible beneficial effects in the clinical arena. We provide here a brief historical account of the medical uses of nitrite and nitrate over the centuries that may serve as a basis for a careful reassessment of the health implications of their exposure and intake and may inform investigations into their therapeutic potential in the future
Characterizations of balanced and cobalanced Butler groups
No full textThe class of Butler groups is defined to be the class of pure subgroups of finite rank completely decomposable torsion-free abelian groups. Let (0) denote the class of Butler groups. For , define the class to be those groups A which appear as the kernel of a balanced exact sequence with B a finite rank completely decomposable group and C a group. Dually, let co- denote the class of Butler groups, and for define the class co- to be those groups C which appear as the quotient in a cobalanced exact sequence with B a finite rank completely decomposable group and A a co- group. The classes , and the classes co-, form two strictly decreasing chains of Butler groups, each of which intersects to the class of finite rank completely decomposable torsion-free abelian groups. Characterizations of groups and co- groups are given in terms of direct sum decompositions of certain pure subgroups and factor groups, respectively. In addition it is shown that for any positive integers n and m the intersection of the classes and co- contains a group which is neither in nor in co-
Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
No full textabstract: Novel hydride chemistries are employed to deposit light-emitting Ge [subscript 1- y] Sn [subscript y] alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge [subscript 2]H[subscript 6] and deuterated stannane SnD[subscript 4]. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge [subscript 3]H[subscript 8], whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge [subscript 4]H[subscript 10] as the Ge source. The photoluminescence intensity from Ge [subscript 1− y] Sn [subscript y] /Ge films is expected to increase relative to Ge [subscript 1− y] Sn [subscript y] /Si due to the less defected interface with the virtual substrate. However, while Ge [subscript 1− y] Sn [subscript y] /Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge [subscript 1− y] Sn [subscript y] /Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge [subscript 1− y] Sn [subscript y] /Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge [subscript 1− y] Sn [subscript y] /Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si[subscript 1− x] Ge [subscript x] /Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at http://dx.doi.org/10.1063/1.489678
Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
No full textabstract: The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10[superscript −5] A/cm[superscript 2] at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit ) is estimated to be as low as ∼2 × 10[superscript 12] cm[superscript −2] eV[superscript −1] under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF APPLIED PHYSICS 117, 5 (2015) and may be found at http://dx.doi.org/10.1063/1.490695
OB00040 - Damodarpur Copper Plate 1 (GE 163) of Budhagupta
No full textDamodarpur Copper Plate 1 (GE 163) of Budhagupt
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