1,721,031 research outputs found
Compact terahertz devices based on silicon in CMOS and BiCMOS technologies
No full textThis is a set of research data related to the article titled But D.B., A. V Chernyadiev, K. Ikamas, C. Kołaciński, A. Krysl, H.G. Roskos, W. Knap, A. Lisauskas, Compact terahertz devices based on silicon in CMOS and BiCMOS technologies, Opto-Electronics Rev. 31 (2023) e144599–e144599. https://doi.org/10.24425/opelre.2023.144599.The set contains numerical data used to create the next Figures:Fig02A.csv - Fig.2 panel (a) Comparison of voltage response as a function of the frequency for CMOS-based TeraFET with a narrowband patch antenna (blue dots, 4th column) and the substrate-lens coupled (green dots,6th column) slot dipole antenna. The red curve (2nd column) is the power.Fig02B.csv -Fig.2 panel (b) Comparison of NEP for narrowband patch (blue dots, 2nd column) and slot dipole (green dots, 4th column) antennas as a function of frequency. The red curves correspond to the calculated value of NEP for respective devices (patch, 6th column and slot, 8th column).Fig03AA.csv - Fig.3 panel (a1) The power spectrum of the cw-photomixer THz radiation source is denoted by the grey curve.Fig03AB.csv - Fig.3 panel (a2) The curves correspond to signals that have been measured utilizing a TeraFET detector with patch antennas.Fig03B.csv - Fig.3 panel (b) Beam areas as a function of the frequency that was determined during experimentFig04D.csv - Fig.4 panel (d) - the simulated impedance for a MOSFET with 60 nm gate length and 28 µm width (14 fingers with 2 µm each)Fig04E.csv - Fig.4 panel(e) the spectrum of the real part of conductance for different values of 𝐿𝑔.Fig05C.csv - Fig.5 panel (C) Schematic representation of Colpitts oscillators for 65 nm CMOS technology. Dependence of the radiated power on frequency which is controlled by gate (base) bias voltage.Fig05D.csv - Fig.5 panel (d) - Schematic representation of Colpitts oscillators for a 130 nm BiCMOS technology. The dependence of the radiated power on frequency is controlled by a gate bias voltage of 65 nm CMOS VCO different drain voltages.Fig07D.csv - Fig.7 panel (d) - Dependence of the radiated power on frequency which is controlled by base bias voltage for 130 nm BiCMOS technologies at different collector biases.Fig07B.csv - Fig.7 panel (b) - The dynamic range of mixing signal (2nd column). Frequency of oscillations as a function of base bias voltage (4th column)Fig08B.csv - Fig. 8. panel (b) - The radiation spectra obtained using the interferometer for a 65 nm CMOS harmonic oscillator.Fig08C.csv - Fig. 8. panel (c) - The radiation spectra obtained using the interferometer for a 130 nm SiGe HBT fundamental oscillatorFig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 right image of panel b - Two Fig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 right image of panel b -Fig.9-003-Scan00topoFwd.int and Fig.9-003-Scan00topoBwd.int - Fig.9 right image of panel b - Two files for topographic drawing, index F - forward & B - backward are the direction of the scan, during the experiment.Fig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 left image of panel b - two files for the image obtained from s-SNOM scans at the third harmonic. Files could be opened by Gwyddion software. Gwyddion is Free and Open Source software covered by GNU General Public LicenseFig.10BA.txt - Raster scan dataFig.10BB.txt - Parameter of scanFig.11B.xls - Fig. 11. panel - The eye diagrams of the detector output signal at 3 MHz of the point-to-point data transmission line.</p
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Silicon based terahertz radiation detectors
No full textCette thèse est consacrée à l'étude des détecteurs de radiation THz basés sur des transistors à effet de champ qui ont été fabriqués en utilisant les technologies différentes. La photo-réponse de transistors à effet de champ a été étudiée dans une large gamme d'intensités de radiation: de 0,5 mW/cm2 à 500 kW/cm2, et pour des fréquences allant de 0,13 THz à 3,3 THz. Les détecteurs montrent la photo-réponse linéaire en fonction de l'intensité du rayonnement dans une large gamme d'intensités, jusqu'à plusieurs kW/cm2. Pour toutes les fréquences, nous avons observé que la région linéaire a été suivie par une partie non linéaire et ensuite par une saturation. Cet effet a conduit à un nouveau modèle de détecteurs FET à large bande qui est basé sur la connaissance phénoménologique de caractéristiques statiques de transistor. Le modèle prend en compte le comportement non linéaire du courant dans le canal dans toute une plage de fonctionnement du transistor, ce qui est particulièrement important à des intensités élevées de rayonnement THz. Les données expérimentales ont été interprétées avec succès dans le cadre du modèle développé.This thesis is devoted to study of terahertz detectors based on field-effect transistors fabricated using silicon technology and they comparison to InGaAs/InP ones. The main research effort was devoted to the problem of detectors linearity at high radiation intensities. The photoresponse of field effect transistors to terahertz radiation in a wide range of intensities: from 0.5 mW/cm2 up to 500 kW/cm2 and for frequencies from 0.13 THz to 3.3 THz was studied. This work shows that the photoresponse of all studied detectors increases linearly with increasing radiation intensity up to a few kW/cm2 range and is followed by the nonlinear and saturation parts for higher radiation intensities. This effect has led to the new model of broadband field-effect transistor detectors. The model is based on the phenomenological knowledge of the transistor static transfer characteristic and explains the photoresponse nonlinearity as related to non-linearity and saturation of the transistor channel current. The developed model explains consistently experimental data both in linear and nonlinear regions of terahertz detection
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Détecteurs de radiation THz à base de silicium
No full textThis thesis is devoted to study of terahertz detectors based on field-effect transistors fabricated using silicon technology and they comparison to InGaAs/InP ones. The main research effort was devoted to the problem of detectors linearity at high radiation intensities. The photoresponse of field effect transistors to terahertz radiation in a wide range of intensities: from 0.5 mW/cm2 up to 500 kW/cm2 and for frequencies from 0.13 THz to 3.3 THz was studied. This work shows that the photoresponse of all studied detectors increases linearly with increasing radiation intensity up to a few kW/cm2 range and is followed by the nonlinear and saturation parts for higher radiation intensities. This effect has led to the new model of broadband field-effect transistor detectors. The model is based on the phenomenological knowledge of the transistor static transfer characteristic and explains the photoresponse nonlinearity as related to non-linearity and saturation of the transistor channel current. The developed model explains consistently experimental data both in linear and nonlinear regions of terahertz detection.Cette thèse est consacrée à l'étude des détecteurs de radiation THz basés sur des transistors à effet de champ qui ont été fabriqués en utilisant les technologies différentes. La photo-réponse de transistors à effet de champ a été étudiée dans une large gamme d'intensités de radiation: de 0,5 mW/cm2 à 500 kW/cm2, et pour des fréquences allant de 0,13 THz à 3,3 THz. Les détecteurs montrent la photo-réponse linéaire en fonction de l'intensité du rayonnement dans une large gamme d'intensités, jusqu'à plusieurs kW/cm2. Pour toutes les fréquences, nous avons observé que la région linéaire a été suivie par une partie non linéaire et ensuite par une saturation. Cet effet a conduit à un nouveau modèle de détecteurs FET à large bande qui est basé sur la connaissance phénoménologique de caractéristiques statiques de transistor. Le modèle prend en compte le comportement non linéaire du courant dans le canal dans toute une plage de fonctionnement du transistor, ce qui est particulièrement important à des intensités élevées de rayonnement THz. Les données expérimentales ont été interprétées avec succès dans le cadre du modèle développé
Détecteurs de radiation THz à base de silicium
No full textThis thesis is devoted to study of terahertz detectors based on field-effect transistors fabricated using silicon technology and they comparison to InGaAs/InP ones. The main research effort was devoted to the problem of detectors linearity at high radiation intensities. The photoresponse of field effect transistors to terahertz radiation in a wide range of intensities: from 0.5 mW/cm2 up to 500 kW/cm2 and for frequencies from 0.13 THz to 3.3 THz was studied. This work shows that the photoresponse of all studied detectors increases linearly with increasing radiation intensity up to a few kW/cm2 range and is followed by the nonlinear and saturation parts for higher radiation intensities. This effect has led to the new model of broadband field-effect transistor detectors. The model is based on the phenomenological knowledge of the transistor static transfer characteristic and explains the photoresponse nonlinearity as related to non-linearity and saturation of the transistor channel current. The developed model explains consistently experimental data both in linear and nonlinear regions of terahertz detection.Cette thèse est consacrée à l'étude des détecteurs de radiation THz basés sur des transistors à effet de champ qui ont été fabriqués en utilisant les technologies différentes. La photo-réponse de transistors à effet de champ a été étudiée dans une large gamme d'intensités de radiation: de 0,5 mW/cm2 à 500 kW/cm2, et pour des fréquences allant de 0,13 THz à 3,3 THz. Les détecteurs montrent la photo-réponse linéaire en fonction de l'intensité du rayonnement dans une large gamme d'intensités, jusqu'à plusieurs kW/cm2. Pour toutes les fréquences, nous avons observé que la région linéaire a été suivie par une partie non linéaire et ensuite par une saturation. Cet effet a conduit à un nouveau modèle de détecteurs FET à large bande qui est basé sur la connaissance phénoménologique de caractéristiques statiques de transistor. Le modèle prend en compte le comportement non linéaire du courant dans le canal dans toute une plage de fonctionnement du transistor, ce qui est particulièrement important à des intensités élevées de rayonnement THz. Les données expérimentales ont été interprétées avec succès dans le cadre du modèle développé
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