122,155 research outputs found

    Expenditure as proxy for UK household emissions? Comparing three estimation methods

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    Due to a lack of emissions data at the household level, studies examining the relationship between UK household CO2 emissions and household characteristics currently rely on expenditure surveys to estimate emissions. There are several possible methods available for doing so but so far there is no discussion in the literature about the advantages and disadvantages related to these options. Such a comparison is relevant because studies in this area often draw policy-relevant conclusions.To address this gap, this paper compares three different methods of estimation to discuss two questions: first, is it at all necessary to convert household expenditure into emissions, given that household expenditure and emissions are strongly correlated, and does research that takes this approach add anything to the insights that already exist in the extensive literature on the determinants of household expenditure? Second, if we assume that it is necessary to convert household expenditure into emissions, are more detailed (and time-consuming) methods of doing so superior to less detailed approaches? The analysis is based on expenditure data from the UK Living Costs and Food Survey 2008-9 and its predecessor the Expenditure and Food Survey 2006-7

    Yves Bonnefoy et Piero della Francesca : écrire le regard

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    Buchs Arnaud. Yves Bonnefoy et Piero della Francesca : écrire le regard. In: Cahiers de l'Association internationale des études francaises, 2010, n°62. pp. 239-252

    2. Auf der römischen Strasse von Baden nach Buchs

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    Enthält: 1. Vom Bonenberg in prähistorischer Zeit (Reste einer bronzezeitlichen Siedlung ; Das vergessene Grubenhaus der Hallstattzeit ; Vor der Heimkehr (Erzählung)) ; 2. Auf der römischen Strasse von Baden nach Buchs (Im Sommer 59 n. Chr. (Erzählung) ; Erläuterungen: Die römische Strasse bei Otelfingen ; Eine bronzene Fibel aus dem Strassenkoffer ; Ein Gehöft bei Otelfingen ; Ein römisches Brandgrab in Otelfingen ; Der Gutshof von Buchs) ; Glossa

    Mainstreaming the environment? the third sector and environmental performance management

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    Third sector organisations (TSOs) are increasingly seeking to find ways in which their performance can be evaluated to demonstrate the value of their activities (Kendall and Knapp, 2000; Paton, 2003; Arvidson, 2009). While the focus of TSOs has been predominantly the analysis of their social benefits, there is increasing awareness that the third sector needs to better consider its environmental impact.This has been given increased momentum by the publication of Shaping Our Future: The Joint Ministerial and Third Sector Task Force Report on Climate Change, the Environment and Sustainable Development in March 2010. Given the prominence of environmental issues in recent years, it is disarming to discover that there is only a limited literature on how TSOs evaluate their environmentalperformance. In an attempt to develop a more systematic approach to this field of study, this paper provides a brief summary of the range of tools that are currently available to TSOs to evaluate their environmental performance. It then offers an analytical framework for understanding and evaluating the variety of tools and outlines a research agenda for field research on understanding the application of such tools in practice

    Local modification and characterization of the electronic structure of carbon nanotubes

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    In december 1959, in his famous lecture "There's Plenty of Room at the Bottom" given at Caltech, Richard Feynman imagined the possibility to manufacture objects at the nanometer scale (1 nm = 10¡9 m) by maneu- vering matter atom by atom. This revolutionary idea paved the way to envision systems designed and engineered at the ultimate length scale rele- vant to material science. Such systems have become a reality today and the efforts to understand, build and use them encompass what is called nan- otechnology. Today, nanoscience and nanotechnology constitute very active and promising multidisciplinary research areas, bringing together engineers and scientists from several ¯elds like physics, chemistry, materials science, electronics, biology and medicine. A strong focus is given to the understand- ing of the correlations between the structure of a material at the atomic level and its optical, chemical and electronic properties. But nanoscience and nanotechnology also aim at developing and improving techniques for manufacturing nanomaterials for new applications. When the dimensions of an object are shrunk down to a scale of the order of the Fermi wavelength of the electrons, the said object will behave according to the rules of quantum mechanics, and novel properties will emerge that may be completely different from the bulk properties. One well-known example for this is provided by graphite. Graphite is a carbon allotrope whose structure consists of a stacking of two-dimensional, sp2-bonded carbon layers interacting with each other by van-der-Waals interactions. Because of these weak inter-layer interactions, graphite is known as a mechanically soft material which is used in pencil leads or, due to its high melting point and good electrical conductivity, in the electrodes of arc lamps and arc furnaces. Now, if one imagines isolating a small sheet of a graphite monolayer and roll it into a cylinder with nanome- ter scale diameter, one will obtain a nano-object with amazing mechanical, thermal and electronic properties. Such objects called carbon nanotubes (CNT) have been discovered in 1991 1 and since then have led to an explo- sion of research activities in many labs worldwide. In terms of mechanical properties, carbon nanotubes are among the strongest and most resilient materials known to exist in nature, with a Young's modulus approaching 1.2 TPa and a tensile strength 80 times higher than high strength steel. Their electronic properties are unique in the sense that they are completely determined by the tube geometry, resulting in semiconducting or metallic character, with observed ballistic transport properties up to a few microm- eters for the latter 2. During the last decade, CNT-based device prototypes like single-electron transistors (SET) 3, ¯eld-effect transistor (FET) 4, logic gates or memories 5;6 could be realized. Especially, it was demonstrated that a CNTFET has superior performance over standard Si MOSFETs 7. CNT based FETs are then very promising to be used as building blocks for future large-scale integrated circuits as the actual silicon technology might soon reach its limits in terms of miniaturization. Recent progress in separa- tion techniques where individual chiralities can be isolated further sustain this assumption 8. Also, growth techniques got improved with regard to high purity of the raw material 9 and still constitute an active research ¯eld towards a highly desired chirality selective growth. Despite all these advances, the development of a reliable and massively parallel integration technology for CNT-based electronic devices that can compete in yield and structure size with silicon technology is still missing and it is not yet clear if such a technology can be established. Up to now, especially in the worldwide race towards the realization of the most competitive SWNT-based transistor, research focussed on mainly defect free nanotubes. Nevertheless, researchers reported interesting results from the investigation of intrinsic defects. For example, a classical p ¡ n rectifying behavior has been reported for an intramolecular junction in a single-walled carbon nanotube (SWNT), due to a special arrangement of the C-C bonds at a tube kink 10. Furthermore, two separated intrinsic defects in a metallic SWNT embodied in a source-drain-gate device showed gate-dependent resonant backscattering properties 11. And more recently, a high gate sensitivity at the position of individual defects of unknown nature in similar devices has been observed 12. These ¯ndings show that whereas a defect can be considered as a nui- sance, on the other hand it can be regarded as an opportunity to tailor the electronic properties of CNTs. Thus, the question arises to know how and to which extent different types of defects can change the electronic proper- ties of SWNTs. This is important in view to possibly modify and improve the properties of existing CNT-based electronic devices such as CNTFETs, or even further to de¯ne new kind of quantum devices with possibly new properties entirely designed by a controlled creation of speci¯c defects. The fundamental questions put above constitute the main motivation of this Ph.D thesis. Here, we propose a study of the interplay between ar- ti¯cially created defects and the electronic structure of SWNTs by means of low temperature scanning tunneling microscopy and spectroscopy (LT- STM/STS). LT-STM/STS constitutes the perfect investigation tool to achieve\ud this goal since it enables us to directly probe the electronic structure of solids with atomic resolution. The defects we investigate here are created by ion bombardment. In order to study the effect of well-de¯ned individual de- fects, a low invasive method for their creation must be privileged. To serve this purpose, we have chosen an ECR plasma source producing low energy ions of the order of a few eV. In a ¯rst phase, we investigated hydrogen ion-induced defects, motivated by a earlier work on graphite where it was shown that such defects act as scattering centers leading to large momentum scattering. In a second phase, we studied the effects of an exposition of the tubes to nitrogen plasma. This is motivated by the fact that the intrinsic p-type doping of CNTFETs draws up a demand on techniques allowing n-type doping in view to de¯ne p-n junctions, which are indispensable key-blocks towards a future SWNT-based technology. Different approaches like deposition of K donor atoms 13 or attempts to create substitutional N sites during the tube growth 14 present inhomogeneity problems. A controlled substitution technique is thus highly desirable. In the last phase, we were interested to create harsher defects like va- cancies and double vacancies, which have shown to largely increase the resistivity of SWNTs 15. This could be achieved by medium energy argon ions of 200 eV and 1.5 keV produced by an ion gun. Outline The present Ph.D thesis is organized as follows: Chapter 1 gives a brief introduction on the geometrical structure, synthe- sis and electronic structure of SWNTs. The actual knowledge on the effects of structural defects on the electronic and transport properties of SWNT will be given in the form of an overview of the literature. Chapter 2 describes the experimental methods used in this work. As the principal investigation tool, the basic theoretical principles of STM and STS will be described, followed by a technical description or our LT-STM/STS setup. A short introduction to tmAFM will also be given. And ¯nally, the basic principles of cold plasma physics will be described, with emphasis on ECR plamsa and DC glow discharge. Chapter 3 describes in details the different steps involved in the sample preparation, from the SWNT suspension to the defect free SWNT sample characterization by means of tmAFM and LT-STM/STS. Chapter 4 and 5 present topography and spectroscopy investigations on ECR H- and N-plasma-induced defects. In both cases, new defect- induced gap states in semiconducting SWNTs could be observed. For the ECR-H plasma treatment, STM/STS investigations combined with ¯rst principle ab initio calculations demonstrated that a corre- lated chemisorption of H-adatoms on the SWNT wall gives rise to symmetric paired gap states. Chapter 6 presents topography and spectroscopy investigations on 200 eV and 1.5 keV Ar+ion-induced defects. From ¯rst principle ab initio calculations combined with our experimental results, we concluded on the formation of two main defect types: vacancies and C-adatoms giving rise to new states in the semiconducting gap. An increase of the complexity of the defect con¯guration has been observed for 1.5 keV treatement, compared to 200 eV. Chapter 7 gives an extended discussion on the often observed NDR be- havior in the I ¡ V curves recorded at defect sites. Within a simple tunneling model, we could explain this phenomenon by a voltage de- pendence of the tunneling barrier height. Chapter 8 describes electronic con¯nement effects observed between con- secutive defects in metallic SWNTs. The capability of our method to create su±ciently strong scattering centers shows the possibility to de- ¯ne room temperature active intra-tube quantum dots. The discussion of the experimental observations mainly based on a Fourier analysis of the spatial variation of the differential conductance is made on the ba- sis of a scattering matrix formalism as well as a geometrical approach within the Fourier projection-slice theorem. Details on the ab initio calculations for different defect structures and ad- ditional calculation results are given in Appendices A and B, respectively

    A Multi-Language Comparison of Influences on Author Verification using Character N-Grams

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    We create a new multi-language corpus for author verification based on Wikipedia talkpages, and evaluate the influence that differences in topic and time have on character n-gram author profiles. Topic alignment between two texts is found to increase author verification precision, and an authors writing style is found to change over time, but not more significantly after 3 years than after 1 year.Information ArchitectureWISElectrical Engineering, Mathematics and Computer Scienc

    Appropriate Similarity Measures for Author Cocitation Analysis

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    We provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis

    The vanishing author in computer-generated works: a critical analysis of recent Australian case law

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    Abstract The use of software is ubiquitous in the creation of many copyright works, yet the requirement in copyright law that every work have a human author who engages in independent intellectual effort means that its use may prevent copyright subsistence. Several recent Australian cases have refocused attention on authorship as an essential criterion of copyright subsistence, and these cases suggest that much computer-produced output may be authorless and thus lack copyright protection. This article, the first in a two-part series, analyses how each case deals with the question of authorship of computer-produced works and why the use of software diminishes copyright protection for a significant number of computer-generated works. The article critiques the application of conventional notions of human authorship developed in the pre-computer age to modern productions and suggests alternative approaches to authorship that satisfy both the major objectives of copyright policy and the need to adapt to the computer age. The article argues that, without a broader judicial approach to authorship of computer-generated works, Parliament must remedy the lacuna in protection for these ‘authorless’ works. Possible solutions for reform are suggested. In a forthcoming article, the author comprehensively examines those reform proposals

    Bolens (L.), Buchs (M.) et al. : Les Arabes et l'Occident : contacts et échanges

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    Cuoq Joseph. Bolens (L.), Buchs (M.) et al. : Les Arabes et l'Occident : contacts et échanges. In: Revue française d'histoire d'outre-mer, tome 70, n°258-259, 1er et 2e trimestres 1983. Le Maghreb et la France de la fin du XIXe siècle au milieu du XXe siècle (1re Partie) p. 91
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