1,720,973 research outputs found

    A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM

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    In this paper, two implementations of a SPICE-based compact model for SiC MOSFETs are presented. The two versions rely on widely adopted LEVEL-3 and BSIM 4.6.1 models, respectively. The paper discusses the feasibility of adopting these two models for the description of SiC power MOSFETs. Furthermore, after calibrating the DC characteristics on target experimental data coming from 1.7 kV-60 A MOSFETs, a comparison between the accuracy of the two is presented

    Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography

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    This paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization. © 2024 The Author(s)

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed

    Threshold Voltage Temperature Dependence for a 1.2 kV SiC MOSFET with Non-Linear Gate Stack

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    The use of Silicon Carbide (SiC) power MOSFETs is becoming increasingly popular due to their unique properties, including a wide bandgap, higher critical electric field, and superior thermal conductivity compared to traditional Silicon (Si) MOSFETs. The reliability assessment of SiC power MOSFETs holds significant importance across various industries, such as automotive and aerospace, where these devices find numerous applications. One crucial aspect of their reliability is evaluating their performance during short-circuit (SC) events. To address this concern, this study employs TCAD simulations to analyze the behaviour of a SiC power MOSFET equipped with a gate insulator that consists of a stack of silicon dioxide (SiO2) combined with a non-linear dielectric (NLD) material. This NLD exhibits a Curie-Weiss temperature dependence, characteristic of ferroelectric materials. During short-circuit events, failures are often associated with temperature rises. The study demonstrates the effectiveness of using an NLD with a temperature-dependent permittivity (ε) as a gate insulator. By doing so, the temperature increase is mitigated, and the MOSFET's ruggedness during short-circuit events is enhanced. This advancement in gate insulator technology could significantly improve the overall reliability and performance of SiC power MOSFETs in various applications

    Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes

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    In this paper, the impact of the anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus of the investigation is the correct simulation of the Schottky barrier height on the different areas of the device to correctly simulate a JBS or MPS structure. It is found that the splitting of the anode contact and an accurate selection of the Schottky barrier height on p-zone is necessary to allow the onset of the bipolar conduction in MPS devices. In this way, it is possible to correctly analyze the behavior of an MPS diode, including the snapback phenomenon

    Variations on the Author

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    “Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship

    Appropriate Similarity Measures for Author Cocitation Analysis

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    We provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis

    Dispelling the Myths Behind First-author Citation Counts

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    We conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more sophisticated methods

    Author Index

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