1,720,987 research outputs found
“GaN-based robust low noise amplifiers
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25-μm GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure ~2.2 dB with an associated gain >25 dB and robustness up to 41-dBm input power level
Design of a 5W Single Chip Front-End for C-Ku Band T/R Modules
In this contribution an integrated Single Chip Front-End (SCFE) for next generation Electronic Warfare T/R modules is presented. The proposed circuit relies on a concurrent design technique merging switches and HPA matching network. Realized MMIC features a 6.3×4.3mm 2 outline operating in the 5.5-18 GHz band with a typical output power of 6W, an associated PAE of 10% and 3dB insertion loss in Rx mode
Going Beyond Counting First Authors in Author Co-citation Analysis
The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Design methodology for distributed power amplifier in software-defined radio applications
A Novel Approach to Minimize RMS Errors in Multi-Functional Chips
In this contribution, a novel approach, based on single cells permutations, is presented for the minimization of RMS errors in digitally controlled subsystems. The method is described and demonstrated for phase-shifting functionalities, but it can be easily applied to different subsystems. By using the proposed approach, the designer is able to choose the best cell configuration, fulfilling arbitrary specification goals. An X-band GaAs multifunctional chip (MFC) for T/R Module applications, composed by a six-bit phase shifter, six-bit attenuator, T/R switch, and on-board serial-to-parallel converter has been designed, realized, tested, and presented here as a test vehicle of the methodology. Measured results include a 4.5° maximum RMS phase error, 1.2 dB maximum RMS spurious amplitude error, and better than 13 dB input and output return losses for all phase and amplitude settings over the whole 9.0-10.2 GHz operating bandwidth. © 2012 Wiley Periodicals, Inc
Robust GaN MMIC Chipset for T/R Module Front-End Integration
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-of-the-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module front-end MMICs. © 2014 IAMOT
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