1,721,026 research outputs found
Circuit-Based Compact Model of Electron Spin Qubit
Full text linkToday, an electron spin qubit on silicon appears to be a very promising physical platform for the fabrication of future quantum microprocessors. Thousands of these qubits should be packed together into one single silicon die in order to break the quantum supremacy barrier. Microelectronics engineers are currently leveraging on the current CMOS technology to design the manipulation and read-out electronics as cryogenic integrated circuits. Several of these circuits are RFICs, as VCO, LNA, and mixers. Therefore, the availability of a qubit CAD model plays a central role in the proper design of these cryogenic RFICs. The present paper reports on a circuit-based compact model of an electron spin qubit for CAD applications. The proposed model is described and tested, and the limitations faced are highlighted and discussed
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider
No full textThis letter reports a digital master-slave D-type register divide-by-512 frequency divider designed in a 0.35 μm Si/SiGe BiCMOS technology. The 600 x 1200 μm2 circuit operates up to 9.5 GHz dissipating 120 mW. Self-oscillations are avoided by the use of a radio frequency carrier detector that controls the bias of the last six registers. © 2008 IEEE
Electrical and thermal local effects simulation for electromigration
No full textIn partictular, the thermal flux crowding effect and the conditions under which a temperature gradient peak builds up are reported. The influeilce of the bending radius of the structure is also taken into account. © 1996 Editions Frontieres.This work reports on the results obtained from numerical simulations of cturrent density, temperature and temperature gradient distributions along test strtuctures designed for the evaluation of electromigration
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMTs
No full textThis paper reports on hot electron (HE) degradation of 0.25-μm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias conditio
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs
No full textThe gate-lag turn-off transient of as-fabricated and hut-carrier stressed power AlGaAs/GaAs NFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor trays. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress
No full textAlGaAs/GaAs HBTs play a significant role in the market of wireless products. Using HBT devices fabricated at LAAS and tested on-wafer, the effects of BE diffusion on the device RF characteristics, and their correlation with the DC degradation mode are documented. The stress time and current dependences of the degradation are also resolved
The effect of hot electron stress on the DC and microwavecharacteristics of AlGaAs/InGaAs/GaAs PHEMTs
No full textThis work reports on hot electron reliability of 0.25 μm Alo.25−Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs from the viewpoint of both DC and RF characteristics. The changes of DC and RF behavior after high drain bias stressing are shown to be strongly correlated. Both can be attributed to a decrease of the threshold voltage, yielding different effects on gain depending on the bias point and circuitry chosen for device operation: a fixed current bias scheme is shown to minimize the changes induced by the stress
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