28 research outputs found
Simulation of drain induced barrier lowering (DIBL) in metal oxide semiconductor field effect transistor (MOSFET): artikel
No full textThis paper shows Simulation of Drain Induced Barrier Lowering (DIBL) in Metal Oxide Semiconductor Field Effect Transistor (MOSFET)”. The research and study on this is investigated. Using software from SILVACO International, the simulation of the N-channel metal oxide semiconductor (NMOS) can be studied and the study is about DIBL due to short channel. SILVACO technology computer-aided design (TCAD) software is use to do the simulation and to obtain all the results needed. The virtually fabrication of NMOS is done using ATHENA module meanwhile for electrical characterizations of NMOS is done using ATLAS module. Using this software, the structure of MOSFET and I-V curve can be plotted through the TONYPLOT. In this study, the drain voltage, VD and channel length, L act as the main roles in the results. Therefore, to see the role of drain voltage on DIBL, five different values of drain voltage, VD which are 0.1 V, 0.2 V, 0.3 V, 0.4 V and 0.5 V are used. Meanwhile, for channel length, L, the values used are 0.20 µm, 0.30 µm, 0.40 µm and 0.50 µm. From drain current, ID versus gate voltage, VG (I-V) curve, the value of DIBL is obtained and analyzed to complete the analysis of DIBL. When the drain voltage, VD increasing, the potential barrier in the channel decreasing which leads to DIBL. As the voltage drain, VD is increasing, and the barrier height is decreasing while the drain current, ID is increasing. This project do achieved the objectives of the project
Optimization of flexure geometry in out-of-plane capacitive accelerometer for mechanical sensitivity enhancement
No full textEffect of indium concentration on optical and electrical properties of in doped ZnO thin films for gas sensing application
No full textSeriphap kap khwamnomton khong manut
No full textAs one of the leaders in the student movement during the October 1973 uprising, the author writes about his experience and philosophical lessons he learned when he spent time in the jungle fighting for social equality and Marxist ideology
Phutthathamnai ruang--- khwamcharoen thang theknoloyi khong manut
No full textThe author illustrates a Buddhist prophecy about the future of the world. The prophecy was translated from a Buddhist scripture in Lanna dialect, spoken in the North of Thailand. It predicts the innovation of modern technology that has brought profound changes in human's life
Comparison of Polyaniline Performance as A Nitrate EGFET Sensor Layer with Sonication Temperature
No full textThe performance of the nitrate Extended Gate Field Effect Transistor (EGFET) sensor has been compared using polyaniline (PANI) with different sonication temperatures, as presented in this paper. PANI was prepared with two sonication temperatures, 28°C and 38°C then employed as the nitrate sensor layers of the EGFET that fabricated on Zinc Oxide (ZnO) and Indium Titanium oxide (ITO) substrate using dip coating method with 15 seconds dipping times. The sensing electrode (SE) was characterized to observe the performance of the nitrate EGFET sensor by comparing PANI performance with different sonication temperatures when interacting with nitrate ions, resulting in sensitivity and linearity of the sensor toward nitrate concentrations. PANI/ZnO exhibits excellent nitrate detection capabilities when prepared at room temperature of 28°C, with a sensitivity of 58.1 mV/dec and linearity of 0.9956. To assess the long-term response of SE, drift measurements were conducted by tested sensor with a 20-ppm nitrate concentration for durations ranging from 1 to 10 minutes where ZnO/PANI SE at 28°C show response gradually decreased over time, exhibiting a drift rate of 83.4 mV/hour over 10 minutes. Consequently, a sonication temperature of 28°C emerges as the ideal parameter for preparing PANI solutions to yield high-performance nitrate sensors
