1,721,032 research outputs found
Silicon carbide photonic crystal cavities with integrated color centers
No full texthe recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here, we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q's as high as 45000 and mode volumes of approximately (λ/n) 3 . We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q's in the range of 900–1500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices
Cavity-enhanced measurements of defect spins in silicon carbide
No full textThe identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensin
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Interfacing Defect Qubits with Nanophotonics in Silicon Carbide
Full text linkDefect based qubit systems like the nitrogen vacancy center in diamond have recently emerged as promising candidates for quantum technologies due to their combination of long coherence times, room temperature operation, and robust optical interface. In order to realize many of their proposed applications, defect qubits must be incorporated into scalable devices architectures consisting of photonic, mechanical, or electrical degrees of freedom. Despite much recent progress, many challenges remain for diamond growth and device fabrication. As an alternate approach, we engaged in a search for nitrogen vacancy center analogues in alternative materials with the hope of obtaining a greater degree of control over defect and material properties. Ultimately, we discovered that divacancy-related point defects in all three of the most common forms of silicon carbide- termed 4H, 6H, and 3C- act as analogues to the nitrogen vacancy center in diamond. We chose to focus our research primarily on defects in 3C silicon carbide (termed 'Ky5' defects) because of its availability as a single crystal heteroepitaxial thin film grown on silicon, an advantage that greatly facilitates the fabrication of functional devices. We characterized the spin and optical properties of Ky5 defects in thin film geometries and observed many similarities to the nitrogen vacancy center. We performed the first measurements of spin dynamics in 3C silicon carbide and demonstrate coherent control of defect spins up to room temperature and observe coherence times of up to 22 microseconds. To demonstrate their use in real devices, we designed, fabricated, and characterized photonic crystal cavities in 3C silicon carbide thin films with mode volumes of less than (lambda/n)^3 and Q's as high as 1,500 with integrated Ky5 defects. Additionally, we performed simulations and analysis of the fabricated structures using observed structural imperfections to determine that the Q's are likely limited primarily by the non-vertical structure sidewall angle. Despite the modest Q's of these structures, they can be utilized to generate large local field intensities to enhance optical interactions with Ky5 qubit states within the cavities. We accomplish this by performing cavity enhanced photoluminescence excitation spectroscopy on cavity modes tuned to the zero phonon line of the defects and observe large (as high as 30 times) increases in the luminescence and optically detected magnetic resonance signals originating from the defect states and approximately 2x faster rates of ground state spin initialization. In addition, we use these techniques to probe the photoluminescence dynamics of the Ky5 defects' optical pumping cycle, perform excitation wavelength dependent studies of spin and spectral inhomogeneity, and use the small mode volume and narrowband photoluminescence enhancements of the cavities to observe spectrally distinct subensembles of defects with linewidths as narrow as 25 GHz within the inhomogeneously broadened zero phonon line. Although much is still unknown regarding the properties of these defects, they show great promise as a candidate system for defect qubit based quantum devices and technologies
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Quantum Optical Control of Single Spins in Diamond
Full text linkThe nitrogen-vacancy (NV) center in diamond has garnered great interest over the past decade as its electronic spin shows promise as a quantum bit (qubit) and nanoscale sensor. Consisting of a substitutional nitrogen adjacent to a vacant site within the carbon lattice of diamond, this defect exhibits millisecond-long spin coherence times extending beyond room temperature, spin-dependent optical addressability, coupling to intrinsic and nearby nuclear spins, and it can be controlled and manipulated through electrical, magnetic, and optical means. In particular, at cryogenic temperatures (T < 25 K), the NV center's excited state becomes sharp and optically resolvable, providing a solid-state quantum optical testbed. In this thesis, I describe several experiments that explore this quantum optical interface to facilitate the development of a photonic network of single spins linked and controlled by light. We begin by exploring how electric fields tune the orbital levels within the NV center through the DC Stark effect, finding a surprising photo-induced field that aids in the ability to tune multiple NV centers' optical transitions to degeneracy. We then develop techniques to fully control the spin state of the NV center by coupling through a lambda system, an energy configuration consisting of two lower levels coupled to one of higher energy. When a lambda system is optically driven, the spin becomes trapped in a dark state, or the eigenstate of the system that is not coupled to the light fields through destructive interference, forming the basis for the various types of control demonstrated. We demonstrate arbitrary-basis initialization and readout of the spin state through coherent population trapping, as well as the ability to rotate about any arbitrary basis through stimulated Raman transitions. Combining these techniques, we measure the NV center's spin coherence through a completely optical measurement. We then extend these lambda system techniques to adiabatically move the dark state in trajectories around the Bloch sphere. Such trajectories accumulate a quantum mechanical phase that depends only on the geometry of the path enclosed, not on the energetics or time of the interaction. We characterize the interaction, measure this phase, known as Berry phase, and explore the limits of its control and resilience to noise. Finally, we demonstrate another all-optical control technique that uses strong ultrafast pulses of light to transfer the spin between the ground and excited states, deriving spin manipulation from the excited state dynamics. This technique also provides time-resolved spectroscopy of the excited state and its various decay and decoherence mechanisms. These experiments advance the progress toward the development of photonic networks coupling and controlling defects through light-matter interactions
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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Nanometer-scale engineering of shallow spins in diamond
Full text linkA crystal growth technique enabling to control the depth of a single nitro\-gen-vacancy (NV) center at nanometer scale in diamond is developed. This nitrogen delta-doping technique during the plasma-enhanced chemical vapor deposition (PE-CVD) of diamond enables to create near-surface NV centers whose depths ranging from about 100 nm down to less than 2 nm while preserving their spin coherence times. These shallowly doped, long-coherence NV centers are used as an atomic-scale magnetic sensor that enables to detect nuclear spin signal from an organic sample of a nanometer-scale volume {\it external} to the diamond crystal. Extension of this nanometer-scale nuclear magnetic resonance (nanoNMR) to two-dimensional nanometer-scale magnetic resonance imaging (2D nanoMRI) is also presented. The nitrogen delta-doping technique is combined with shallow 12C ion implantation through lithographically-patterned apertures to demonstrate three-dimensional (3D) localization of single NV centers at nanometer scale. The demonstrated long spin coherence times of 3D-localized NV centers pave a way towards quantum applications by maximizing their interactions to the diamond-based nanostructures
X-ray Scattering from Spintronic Structures
Full text linkThe principles and underlying physics of grazing-incidence X-ray scattering are outlined in the context of application to the study of room temperature spintronic systems. Examples are presented showing the precision and reliability of analysis. The use of diffuse scatter measurements to separate topological roughness from chemical intermixing at interfaces is described. Extension of the physics to soft X-ray reflectivity under both linear and circularly polarized beams is discussed and the link to high-resolution X-ray diffraction of single crystal spintronic structures highlighted
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
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