1,720,981 research outputs found
Using photoelectron spectroscopy in the integration of 2D materials for advanced devices
No full textDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).The first commercial applications of two dimensional (2D) layered materials such as graphite and MoS₂ used their lubricant properties. Following the discovery of graphene and its potential applications in various fields, increased interest has focused on other 2D materials such as transition metal dichalcogenides (TMDs) offering tremendous opportunities in advanced optoelectronics and ultra-thin electronics. Using X-ray photoelectron spectroscopy (XPS), this review addresses the facets of the device fabrication and integration and correlates at the nanometer scale the device behavior to the TMD properties. Understanding and solving the integration challenges will make the TMD technology jump from the current phase of experimental proof of concept and laboratory research to a relevant prototype demonstration and production phase.National Science Foundation (NSF) award no. 1407765Erik Jonsson School of Engineering and Computer Scienc
Complexe metallic alloys surfaces : structure, properties and nanostructuration
No full textCe travail a permis de déterminer les structures atomique et électronique de deux surfaces d'alliages métalliques complexes à l'aide d'une approche multi-techniques supportée par des calculs ab intio de structure électronique. Les surfaces de ces cristaux ont pu être corrélées à certains plans présents dans les modèles structuraux disponibles. La terminaison dominante de la surface (100) d'Al13Co4 est identifiée comme un plan corrugué incomplet du volume. La surface (010) de Al3(Mn, Pd) présente un nombre conséquent d'imperfections structurales. À l'exception de certains sites lacunaires, elle est identique au plan corrugué complet du massif. Dans une seconde étape, ces échantillons ont été utilisés comme substrat pour la croissance de films minces métalliques. Les atomes de Pb déposés sur ces deux surfaces suivent un mode de croissance pseudomorphique jusqu'à la formation de la monocouche. Dans le cas de l'Al13Co4, le coefficient de collage du Pb s'annule une fois cette monocouche formée. Sur la surface Al3(Mn, Pd), le croissance de couches additionnelles de Pb est observée. L'adsorption du Cu sur Al13Co4 mène de nouveau à un mode de croissance pseudomorphique jusqu'à la monocouche. Au-delà de ce dépôt, la phase ß-Al(Cu, Co) apparaît en surface. Pour des dépôts à des températures plus élevées, la phase- ß est suivie par la formation de la phase ?-Al4Cu9. Les phases ß et ? croissent suivant deux domaines (110) orientés l'un par rapport à l'autre avec un angle de 72°We report the investigation of pseudo-ten-fold surfaces on two complex metallic alloys considered as approximants to the decagonal quasicristal. The atomic and electronic structure of the both samples is investigated by means of a multi-technique approach supported by ab initio electronic structure calculations. The main termination of the (100) surface of Al13Co4 is attributed to an incomplete puckered layer. The (010) surface of Al3(Mn, Pd) exhibits an important amount of structural imperfections. With the exception of several vacancies, this surface is identical to the complete puckered layer. In a second stage, both surfaces have been used as templates for the growth of metallic thin films. On both surfaces, Pb adatoms adopt a pseudomorphic growth mode up to one monolayer. For the Al13Co4 surface, the sticking coefficient of Pb vanishes upon the completion of the monolayer. However, it remains sufficient for the growth of additional layers on the Al3(Mn, Pd) (010) surface. The adsorption of Cu on the Al13Co4 surface follows also a pseudomorphic growth mode up to one monolayer. The ß-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the ß-phase is followed by the formation of the ?-Al4Cu9 phase. Both ß and ? phases grow as two (110) domains rotated by 72° from each othe
Surfaces d'alliages métalliques complexes : structure, propriétés et nanostructuration
No full textWe report the investigation of pseudo-ten-fold surfaces on two complex metallic alloys considered as approximants to the decagonal quasicristal. The atomic and electronic structure of the both samples is investigated by means of a multi-technique approach supported by ab initio electronic structure calculations. The main termination of the (100) surface of Al13Co4 is attributed to an incomplete puckered layer. The (010) surface of Al3(Mn, Pd) exhibits an important amount of structural imperfections. With the exception of several vacancies, this surface is identical to the complete puckered layer. In a second stage, both surfaces have been used as templates for the growth of metallic thin films. On both surfaces, Pb adatoms adopt a pseudomorphic growth mode up to one monolayer. For the Al13Co4 surface, the sticking coefficient of Pb vanishes upon the completion of the monolayer. However, it remains sufficient for the growth of additional layers on the Al3(Mn, Pd) (010) surface. The adsorption of Cu on the Al13Co4 surface follows also a pseudomorphic growth mode up to one monolayer. The ß-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the b-phase is followed by the formation of the g-Al4Cu9 phase. Both b and g phases grow as two (110) domains rotated by 72° from each otherCe travail a permis de déterminer les structures atomique et électronique de deux surfaces d'alliages métalliques complexes à l'aide d'une approche multi-techniques supportée par des calculs ab intio de structure électronique. Les surfaces de ces cristaux ont pu être corrélées à certains plans présents dans les modèles structuraux disponibles. La terminaison dominante de la surface (100) d'Al13Co4 est identifiée comme un plan corrugué incomplet du volume. La surface (010) de Al3(Mn, Pd) présente un nombre conséquent d'imperfections structurales. À l'exception de certains sites lacunaires, elle est identique au plan corrugué complet du massif. Dans une seconde étape, ces échantillons ont été utilisés comme substrat pour la croissance de films minces métalliques. Les atomes de Pb déposés sur ces deux surfaces suivent un mode de croissance pseudomorphique jusqu'à la formation de la monocouche. Dans le cas de l'Al13Co4, le coefficient de collage du Pb s'annule une fois cette monocouche formée. Sur la surface Al3(Mn, Pd), le croissance de couches additionnelles de Pb est observée. L'adsorption du Cu sur Al13Co4 mène de nouveau à un mode de croissance pseudomorphique jusqu'à la monocouche. Au-delà de ce dépôt, la phase ß-Al(Cu, Co) apparaît en surface. Pour des dépôts à des températures plus élevées, la phase- ß est suivie par la formation de la phase g-Al4Cu9. Les phases b et g croissent suivant deux domaines (110) orientés l'un par rapport à l'autre avec un angle de 72
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
No full textSupplementary material is available on publisher's website. Use the DOI link below.Due to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSₓ) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultrathin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaSₓ compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimNIST through award number 70NANB17H041; NSF (Grant No. CCF‐1619062); Welch Foundation (Grant No. F‐1959‐20180324)Erik Jonsson School of Engineering and Computer Scienc
Tuning Electronic Transport in Epitaxial Graphene-Based Van Der Waals Heterostructures
No full textIncludes supplementary materialTwo-dimensional tungsten diselenide (WSe₂) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe₂-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe₂-graphene interface. Electrical transport measurements reveal a lower resistance between WSe₂ and fully hydrogenated epitaxial graphene (EGFH) compared to WSe₂ grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe₂ and graphene and employ a charge transfer model to determine the WSe₂ carrier density in both cases. The results indicate that WSe₂-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe₂, whereas WSe₂-EGPH forms a Schottky barrier junction.
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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