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    Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime

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    This paper presents a physics-based model that is able to describe the TANOS memory programming transients in the Fowler–Nordheim uniform tunneling regime across the bottom-oxide layer. The model carefully takes into consideration the trapping/detrapping processes in the nitride, the limited number of traps available for charge storage, and their spatial and energetic distribution. Results are in good agreement with experimental data on TANOS devices with different gate-stack compositions, considering a quite extended range of gate biases and times. The reduced gate-bias sensitivity of the programming transients with respect to the floating-gate cell is explained in terms of a finite number of nitride traps and a thinner extension of the nitride trapping region as the gate bias is increased. The model represents a valid contribution for the investigation of the achievable performances of the TANOS technology

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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