218 research outputs found
Spin transport of excitons
We report on observation of the spin transport of spatially indirect excitons in GaAs/AlGaAs coupled quantum wells (CQW). Exciton spin transport over substantial distances, up to several micrometers in the present work, is achieved due to orders of magnitude enhancement of the exciton spin relaxation time in CQW with respect to conventional quantum wells
Limiting and other nonlinear optical behavior of a GaAs/AlGaAs distributed feedback structure
Magnetoexcitons Bound To Ionized-donor Impurities In Gaas/al Xga1-xas Quantum Wells
The binding energy of Wannier excitons bound to ionized-donor impurities, D, in GaAs/AlxGa1-xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields. Our calculations are devoted to heavy-hole magnetoexcitons. As expected, we found that the binding energy of a heavy-hole exciton bound to a donor-ionized impurity increases with the Al concentration, as well as with the applied magnetic field. Otherwise, we found that it is higher than the corresponding for heavy-hole excitons without impurities reported by other authors. Moreover we found that the binding energy of the heavy-hole exciton bound to a donor-ionized impurity is higher (lower) for larger (smaller) quantum well width. Finally we found that our results are in very good agreement when we compare with experimental and theoretical reports.4318992Dingle, R., (1975) Festkrperprobleme, 15. , H.J. Queisser (Ed.) (Advances in Solide State Physics), Vieweg, BraunschweigStebe, B., Assaid, E., Dujardin, F., Le Goff, S., (1996) Solid State Commun., 100, p. 217Ferreira, A.C., Holtz, P.O., Sernelius, B.E., Buyanova, I., Monemar, B., Mauritz, O., Ekenberg, U., Gossard, A.C., (1996) Phys. Rev. B, 54 (16), p. 989Ferreira, A.C., Holtz, P.O., Monemar, B., Sudaram, M., Campman, K., Merz, J.L., Gossard, A.C., (1996) Phys. Rev. B, 54 (16), p. 994Zubkova, S.M., Shulzinger, E.I., (1998) Semiconductors, 32, p. 521Luttinger, J.M., (1956) Phys. Rev., 102, p. 1030De Dios-Leyva, M., Porras-Montenegro, N., Brandi, H.S., Oliveira, L.E., (2006) J. Appl. Phys., 99, p. 104303Greene, R.L., Bajaj, K.K., Phelps, D.E., (1984) Phys. Rev. B, 29, p. 1807Harrison, P., (2005) Quantum Wells, Wires and Dots, , second edDuque, C.A., Beltran, C.L., Montes, A., Porras-Montenegro, N., Oliveira, L.E., (2000) Phys. Rev. B, 61, p. 9936Greene, R.L., Bajaj, K.K., (1985) Phys. Rev. B, 31, p. 6498Li, T.-S., Lu, Y.-T., (1998) Chin. J. Phys., 36 (5), p. 715Miller, R.C., Kleinman, D.A., Tsang, W.T., Gossard, A.C., (1981) Phys. Rev. B, 24, p. 1134Noguera, H.A., Granada, J.C., (2005) Rev. Colomb. Fs., 37 (1), p. 110Oliveira, L.E., De Dios-Leyva, M., Duque, C.A., (2008) Microelectron. J., 39, p. 398Raigoza, N., Morales, A.L., Porras-Montenegro, N., Duque, C.A., (2004) Phys. Rev. B, 69, p. 045323Stebe, B., Essaoudi, I., Ainane, A., Saber, M., (2001) Phys. Rev. B, 64, p. 08530
Measurements of the bandgap-resonant nonlinear refractive index of bulk and MQW GaAs at room temperature
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