1,721,063 research outputs found
Implementation of SELEX technique on Lab-on-Chip systems
Full text linkThe thesis presents the design and the experimental development of a compact and high sensitive Lab-on-Chip (LoC) system suitable for the implementation of SELEX technique. SELEX (Systematic Evolution of Ligands by EXponential enrichment) is a combinatorial technique used in molecular biology to produce copies of the same nucleotide and to select a strand of DNA (aptamer) specific for a target molecule. The proposed Lab-On-Chip system includes the following functional units: an amplification module based on the PCR technique; a separation module able to obtain a single strand DNA from a double strand DNA and a selection module for the specific selection of the aptamer. These functionalities are implemented combining microfluidic components (micro-channels and micro-valves), electronic devices (amorphous silicon photosensors, thin film heaters, temperature sensors) and bioanalytical procedure
Non-Destructive Electrical Techniques as Means for Understanding the Basic Mechanisms of Electromigration
No full textA Study of the Thermal Behavior of Different Test Patterns Used in Differential High Resolution Electromigration Measurements
No full textActivation Energy of the Early Stages of Electromigration in Al-1%/Si/TiN/Ti Bamboo Lines
No full textInfluence of Thermal-Mechanical Effects on Resistance Changes During and After Electromigration Experiments
No full textThis paper is focused on the non-linear resistance behaviours often detected by means of high resolution resistometric methods both at the very beginning of an electromigration (EM) test, and after the high stressing current inducing EM is switched off. It is shown that temperature steps, always present at the beginning or after EM, are the triggering events for different, often reversible, physical phenomena contributing to resistance changes. Precipitation-dissolution of alloyed elements is perhaps the most important one, while other mechanisms, like the combined effect of hydrostatic stress relaxation and void volume change, should cancel out. These effects, however, don't exclude a possible simultaneous effect on the resistance of accumulation/relaxation of EM damage. Experimental results are collected by means of different, complementary techniques
Electromigration Reliability Assesment of Cu-Based Metallization Systems by a Wafer-Level Approach
No full textRecently, a fast improved isothermal method (ISOT) has been devised to characterize the electromigration (EM) wafer level reliability (WLR). In this paper, the usefulness of ISOT will be shown, not only for the aim of process monitoring in production, but also, when the method is applied carefully, to complement and, in perspective, to substitute the expensive standard package-level reliability (PLR) tests, currently used to assess the EM reliability. The complete methodological approach is described, as well as precautions to control the stress conditions and normalization procedures to account for the process parameter spread. Some results on double-damascene 90 nm Cu technology are shown
On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques
No full textElectromigration in thin-film interconnection lines: models, methods and results
No full textElectromigration /EM) in thin film interconnection lines is one of the major concerns for the development of ULSI devices, employing advanced design rules. Different models have been proposed, but the complete comprehension of the basic physical mechanisms leading to EM is still unsatisfactory. In this work, well-established results and unsolved problems are reviewed
Additional Microstructural Analysis on the Samples Examined in the Paper ‘Are High Resolution Resistometric Methods Really Useful for the Early Detection of Electromigration Damage?'
No full textMeasurement of the Local Latch-up Sensitivity By Means of Computer-controlled Scanning Electron-microscopy
No full textThe scanning electron microscopy (SEM) technique for the study of the local sensitivity to latch-up of CMOS integrated circuits is discussed. The technique is independent of a particular electric firing mechanism of latchup and does not require in-depth electrical characterization of the IC before the analysis. The electron beam in the SEM is adopted as a localized current injector, and the injected carriers are used to induce the latch-up state rather than to visualize its paths. A minicomputer-based system drives the beam position and automatically blanks the beam if the scan path has to cross areas which should be protected from charge injection. An example of application is described
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