462 research outputs found
Mass Spectrometric Determination of the Dissociation Energy of Mn2F6
No full textThe gaseous Mn2F6 molecule has been identified for the first time in the vapor produced by MnF3 vaporization and the MnF3(g) dimerization equilibrium studied by the Knudsen cell mass spectrometry technique in the 884–1015 K temperature range. The experimental vapor pressure data were treated by the second- and third-law procedures, and the enthalpy of Mn2F6(g) dissociation has been determined as: equation image. Thermodynamic functions of gaseous MnF3 were calculated from geometrical and vibrational parameters taken from the literature. For gaseous Mn2F6, they were evaluated by comparison with molecular parameters of Co2F6(g). Copyright © 2002 John Wiley & Sons, Ltd
Generation current temperature scaling
No full textThe document consists of two RD50 Technical Notes devoted to the temperature scaling of the current generated in Si bulk. The first one (of 9.5.2011) describes the basics of the phenomenon following from the semiconductor physics and recommends the I(T) parameterisation. The second one (of 12.7.2012) reviews the experimental data on I(T) scaling in irradiated Si sensors available in literature and obtained in Lancaster University. Both sets of results support the conclusions made in the first Note
Forward-bias operation of Si detectors: a way to work in high-radiation environment
No full textTest diodes irradiated by neutrons with fluences up to 10/sup 15/ cm /sup -2/ were successfully operated as particle detectors under forward bias. The charge collection efficiency (CCE) of ~70as reached for minimum ionising particles at relatively low-bias voltages. The more usual reverse bias requires ~10 times larger voltage to give a similar CCE. A decrease in the charge trapping is observed in forward bias operation compared to that under reverse bias. The dark current under forward bias has the usual temperature dependence. This could be used to optimise the operation condition of forward-biased detectors in a real experiment. (23 refs)
DC bias circuit effects in CV measurements.
No full textA DC bias circuit is a necessary part of CV measurement set-up. The effects of this circuit on the measured parameters are simulated and compared with experimental data. Reconstruction of the actual DUT characteristics is considered
Interstrip resistance measurement.
No full textIn ATLAS SCT community two methods of interstrip resistance measurements are used: a) measuring the resistance between two strips and comparing it with a separately measured strip-to bias-rail resistance and b) applying DC voltage to one strip and measuring the current flowing to another strip. The method a) will further be referred to as Resistance Method and method b) as Induced Current Method. In the latter the current can be measured either directly or by a voltage drop on the bias resistor. All three techniques are analyzed in this Note and illustrated by measurements with the same sensor
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