46 research outputs found
The photoelectrical properties of bilateral photoelectrochemical cell with nGaAs photo-electrode
No full textThe conversion of solar energy in electrical one is realized by solar cells as a result of absorption of solar energy and the separation of the photoexcited carriers by potential barriers in different solid state structures such as p-n junctions, Schottky diodes, heterojunctions, MIS and SIS structures. Also, the photoelectrochemicall cells are studied intensively, where the processes described above are on the solid-liquid interface, in other words on the electrolyte-semiconductor interface. The absence of expensive electrovacuum technologies and high-temperature processes in the fabrication of photoelectrochemical cells (PEC) is an important advantage. Different semiconductor materials and electrolyte based redox couples were used for the fabrication of PEC, but a big interest presents the photoelectrochemical cells with the III-V compounds semiconductors as photoelectrodes
Formation of a double electric layer at the Zn/sub m/In/sub 2/S/sub m+3/ (m=1,2,3) - H/sub 2/O(S/sup 2/-/S/sub 2//sup 2-/) interface
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Silicon carbide nanolayers as a solar cell constituent
No full textThin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solidstate target. Deposition was carried out on a cold substrate of ptype Si (100) with a resistivity of 2Ωcm. The Raman spectrum shows a dominant band at 982 cm-¹, i.e., in the spectral region characteristic for SiC. It was found that the root mean squareroughness varies from about 0.3 nm to 9.0 nm when the film thickness changes from about 2 nm to 56 nm, respectively. Transmission electron microscopy studies showed that SiC thin films consist predominantly of an amorphous phase with inclusions of very fine nanocrystallites. A heterostructure consisting of a p-type Si (100) and a layer of predominantly amorphous n-type SiC was fabricated and studie
Silicon carbide nanolayers as a solar cell constituent
No full textThin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solidstate target. Deposition was carried out on a cold substrate of ptype Si (100) with a resistivity of 2Ωcm. The Raman spectrum shows a dominant band at 982 cm-¹, i.e., in the spectral region characteristic for SiC. It was found that the root mean squareroughness varies from about 0.3 nm to 9.0 nm when the film thickness changes from about 2 nm to 56 nm, respectively. Transmission electron microscopy studies showed that SiC thin films consist predominantly of an amorphous phase with inclusions of very fine nanocrystallites. A heterostructure consisting of a p-type Si (100) and a layer of predominantly amorphous n-type SiC was fabricated and studie
Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface
No full textAcces ful text: https://doi.org/10.1109/SMICND.2002.1105884The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs crystals also nanoporous n-GaAs material was used as a photoelectrode. Current-voltage characteristics in the dark and under illumination and spectral distribution of the photosensitivity were studied. The values of the photopotential reach 1V in the case of n-InP photoelectrode and 0.8V and 0.4V in the case of the nanoporous and bulk n-GaAs photoelectrode, respectively
Use of porous GaAs electrodes in photoelectrochemical cells
No full textAccess full text - https://doi.org/10.1002/pssa.200461223The photoelectrochemical properties of semiconductor-electrolyte solar cells with carbon auxiliary electrode and colloidal aqueous solution of Na2SiO3 have been investigated. Bulk n-type single crystalline and nanoporous GaAs material were used as semiconductor electrodes. Current–voltage characteristics under different illumination intensities and spectral distribution of the photosensitivity were studied. The photopotential was found to reach values as high as 0.46 V for bulk n-GaAs. The introduction of porosity in GaAs shifts the maximum of the spectral distribution of photosensitivity towards the longwavelength region and increases the short circuit current by a factor of two
