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Coulomb Nuclear Interference in 31Cl Breakup Reaction
No full text40-50The effect of Coulomb nuclear interference on the magnitude of core fragment longitudinal momentum distribution (LMD)
width and single proton breakup cross-section has been examined quantitatively for 31Cl nucleus breakup reaction. The analysis
is performed for 12C, 58Ni, and 208Pb targets in a range of intermediate incident energies (40-100 AMeV), using a semiclassical
method that treats the full Coulomb and nuclear interaction to all orders, including full multipole expansion of the Coulomb
potential. We examined, in detail, the interference between Coulomb and nuclear diffraction reaction mechanisms and also
between core-target and proton-target Coulomb potentials and quantitatively analyzed its effect on the breakup observables. The
sensitivity of interference on the target size and incident energy is also examined. Our calculations show that due to the
interference effect in light and heavy target cases, the absolute magnitude of a single proton breakup cross-section varies from
1% to 7%, while for medium target, it varies around 20%; on the other hand, the Full Width Half Maxima (FWHM) width of
longitudinal momentum distribution varies approximately from 1% to 4% for all the target nuclei. Therefore, we believe that
our work presented a bit deeper insight into the role of Coulomb nuclear interferences in 31Cl breakup reaction, which is helpful
for a better understanding of experimental data and planning future breakup reaction experiments
A New Threshold Voltage Model of Short Channel FD-SOI MOSFET by Green’s Function Approach to Analytically Solving 2-D Laplace/Poisson’s Equations in Multi-Zone Structure and Applying it to Study Post-Implant Annealing Effect
No full text9-21This paper reports on new analytical models of front and back gate threshold voltages for short-channel fully depleted
silicon-on-insulator (FD-SOI) MOSFETs, considering an annealed non-uniform impurity profile resulting from retrograde
doping required for vertical channel engineering. For this purpose, the exact solutions of multi-zone 2-D Laplace/Poisson
equations have been obtained by adopting a new Green’s function approach. Since the SOI MOSFET is a three-layer structure,
we have established new multi-zone Green’s functions that incorporate the combined effects of all three layers joined together
at the interfaces. This approach allows for a more nuanced analysis of potential distributions in the three-layer structure of SOI
devices, taking into account the interactions between the different layers within the device. Considering the explicit potential
relations thus derived, we formulate closed-form expressions of front and back gate threshold voltages, which include the front
and back gate charge coupling effects, the profile annealing effect, and the effects of drain and gate voltages. This holistic
perspective is crucial because it enables a more accurate understanding of how these variables interact and affect device
operation, thereby enhancing the predictive capability of the models. In addition to the front and back gate threshold voltages,
their biasing counterparts—the respective back and front gate voltages—have also been formulated, accounting for the
aforementioned effects, in order to determine operational modes of the device under study. Finally, the results obtained from the
new model have been rigorously validated by comparison with data generated by ATLAS software, revealing excellent
alignment between the two. This validation not only supports the reliability of the proposed models but also enhances their
applicability in practical semiconductor device simulation and design
Protective role of curcumin on hepatic damage methomyl-induced in rats
No full text160-166Methomyl (Met) is a widely used carbamate pesticide
worldwide. Environmental and occupational exposure to methomyl
can cause serious health problems. This study was conducted to
determine the possible hepatic toxic effects of methomyl in rats. It is
also aimed to contribute to understanding the therapeutic potential
of curcumin, a natural antioxidant, against this toxic effect in this
study. For this purpose, curcumin (100 mg kg-1 bw), methomyl
(0,8 mg kg-1 bw), methomyl + curcumin were given to rats with oral
route for 28 days. Alkaline phosphatase (ALP), alanine
aminotransferase (ALT), aspartate aminotransferase (AST) and
lactate dehydrogenase (LDH) and total protein, albumin,
triglyceride, total cholesterol levels in serum and malondialdehyde
level (MDA) and activities of antioxidant enzyme (GPx, GST,
SOD, CAT) and histopathological alterations in liver tissue were
studied. Methomyl caused significantly increment in the AST, ALT,
ALP, LDH activities and total cholesterol and MDA levels.
However, methomyl induced importantly reducing in the total
protein, albumin, triglyceride levels and SOD, CAT, GPx and
GST activities. In addition to, degeneration of hepatocytes,
congestion and mononuclear cell infiltration in the liver tissue of
methomyl-received rats. In addition, co-administration of curcumin
with methomyl importantly reduced the toxicity methomyl-caused
on the liver function parameters, lipid peroxidation and activities of
antioxidant enzyme and histological structure of liver tissue. The
results showed that curcumin significantly may alleviate methomylinduced
hepatoxicity in rats
Phytochemical characterization and evaluation of the antibacterial activity of Amruthotharam kwath, a traditional polyherbal formulation on multidrug resistant clinical isolates from the respiratory tract
No full text146-157Antibiotic resistance is a multifaceted medical issue affecting the global healthcare sector. Despite continued research and development to combat antibiotic resistance, the development of new antibiotics lags behind the rates of drug resistance. Among the various research strategies under development, traditional polyherbal formulations have greater potential to resolve infectious conditions caused by antibiotic resistant pathogens. Unlike monotherapy antibiotics, polyherbal formulations contain a variety of secondary antibacterial metabolites and their enhanced synergistic action renders them potent therapeutic agents. Multitarget action of phytocompounds at low concentrations poses very low selection pressure that prevents bacteria from developing new resistance mechanism against polyherbals. The study was focused on exploring the antibacterial efficacy of a traditional polyherbal formulation Amruthotharam kwath which had been used to treat respiratory tract infections, one of the leading infectious conditions prevalent in our country. Respiratory tract infection caused by multidrug resistant gram-negative pathogens leads to ineffective empirical treatments and worsens the situation. The study involves preliminary phytochemical analysis, quantification of phytoconstituents, metabolite profiling of the formulation and its antibacterial effect on multidrug resistant clinical isolates from the respiratory tract. The phytochemical analysis revealed the presence of various classes of phytocompounds with antibacterial activity. Antimicrobial assays reported promising antibacterial effect. MIC values were found to be in the range of 6.25 mg/mL-12.5 mg/mL and its MBC ranges from 6.25 mg/mL-128 mg/mL. The formulation exhibited bactericidal effect on majority of the isolates.LC-MS/QToF revealed the presence of 76 secondary metabolites, majority of which possessed antibacterial activity. The SEM image analysis confirmed complete destruction of cell wall as well as cell membrane of the pathogens. This study suggests the promising herbal therapy of Amruthotharam kwath which can be proposed as an alternative for treating infections caused by multidrug resistant pathogens
Bisphenol B: An inhibitor of mitochondrial electron transport chain protein
No full text426-430The toxicity of bisphenols is well-reported. Studies report mitochondrial dysregulation due to BPA. However, limited
studies exist on other analogs of bisphenols. Moreover, the mechanism involved in such dysregulation is unknown. We have
performed a study of Bisphenol B (BPB) with various proteins of mitochondria using in silico and in vitro studies. It was
observed that BPB interacts with and inhibits the ETC complex III protein. This hints that the mitochondrial toxicity of BPB
is due to the ETC complex III protein. However, more research in the field is required to unravel the toxicological effect of
bisphenol on mitochondria fully
Optimizing Gallium Nitride (GaN) Based SOI-TF-FinFETs for Enhanced Linearity and Low Distortion in High-Frequency Applications
No full text161-166Gallium Nitride (GaN) based Fin Field-Effect Transistors (FinFETs) represent a breakthrough in semiconductor
technology, especially for applications requiring high power, high frequency, and high efficiency. GaN is a wide bandgap
semiconductor material known for its excellent electrical properties, including high electron mobility, breakdown voltage,
and thermal stability. These characteristics make GaN an ideal candidate for next-generation electronic devices, particularly
in RF and microwave communication, power amplification, and high-speed digital circuits. This paper investigates the GaNSOI
truncated FinFET (GaN-SOI-TF-FinFET) designed for high-performance linearity and low distortion, focusing on key
metrics such as second-order and third-order transconductances (gm2 and gm3) values, third-order intercept points (IIP3),
second and third harmonic distortions (HD2 and HD3), third-order intermodulation distortion (IMD3), and the 1-dB
compression point (P1dB). By leveraging the high electron mobility and wide bandgap of GaN, we have optimized the fin
dimensions and gate structures to enhance device performance. Our results indicate that the GaN-SOI-TF-FinFET shows
significant improvements compared to conventional Silicon FinFETs. The gm2, gm3, HD2, HD3, and IMD3 values are
reduced by 42.86%, 62.50%, 112.50%, 56.12%, and 56.25% respectively, while IIP3 and P1dB values are increased by
300% and 100% respectively. These parameter improvements indicate better power handling capacity and robustness of the
proposed device, highlighting the potential of GaN-SOI-TF-FinFET for advanced RF and communication applications
requiring high linearity and low distortion