ESC Publications - Cambridge Univesity
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Rhizon sampler alteration of deep ocean sediment interstitial water samples, as indicated by chloride concentration and oxygen and hydrogen isotopes
No full textDespite their potential to inform past ocean salinity, δ18O, and temperature, high-resolution depth profiles of interstitial water chloride concentration and hydrogen and oxygen isotopes exist in very few locations. One of the primary limitations to the recovery of these depth profiles is that traditional interstitial water sampling requires 5–10 cm whole rounds of the sediment core, which has the potential to interfere with stratigraphic continuity. The Rhizon sampler, a nondestructive tool developed for terrestrial sediment interstitial water extraction, has been proposed for efficient and nondestructive sampling of ocean sediment pore waters. However, there exists little documentation on the reliability and performance of Rhizon samplers in deep ocean sediments, particularly in regard to their effect on chloride concentration and oxygen and hydrogen isotopic measurements. We perform an intercomparison of chloride concentration and oxygen and hydrogen isotopic composition in samples taken using traditional squeezing versus those taken with Rhizon samplers. We find that samples taken with Rhizons have positive biases in both chloride concentration and stable isotopic ratios relative to those taken by squeezing water from sediments in a hydraulic press. The measured offsets between Rhizon and squeeze samples are consistent with a combination of absorption by and diffusive fractionation through the hydrophilic membrane of the Rhizon sampler. These results suggest caution is needed when using Rhizons for sampling interstitial waters in any research of processes that leave a small signal-to-noise ratio in dissolved concentrations or isotope ratios
Seismicity, normal faulting, and the geomorphological development of the gulf of corinth (greece) - the corinth earthquakes of february and march 1981
No full textSeismicity and associated strain of central Greece between 1890 and 1988
Full text linkWe examined the seismicity of central Greece between 1890 and 1988, using macroseismic and instrumental data, to ask two questions: (1) does the seismicity of this period reveal all the major tectonic structures that are known to be active?; and (2) what are the likely strains associated with the seismicity over this period? Many known active structures have been effectively aseismic for the last hundred years, and even the inclusion of all known large events earlier than 1890 reveals no activity associated with the NE coast of Evia, Gulf of Argos, or graben NE of Mt Parnassos. It is clear that even 100 years' data are inadequate for either a reasonable assessment of seismic risk or for a confident estimation of maximum magnitude. However, we are aware of no earthquakes in central Greece during the last 200 yr that were larger than Ms 7.0. It is probable that the maximum magnitude is restricted by the maximum length of fault segments, which appears to be around 15-20 km. The earthquakes of Ms ≥ 5.8 during 1890-1988 can account for a N-S displacement of around 45-70 cm (with maximum and minimum estimates a factor of two greater and smaller than this) across part of a 1890-1900 triangulation network in central Greece that was resurveyed in 1988. The contribution of smaller events may increase this displacement by about 50 per cent. This cumulative seismic displacement is similar to that estimated from the geodetic work (about 100 cm), but a detailed comparison of the two sets of observations will be reported elsewhere. A re-evaluation of all the important earthquakes of 1890-1988 in central Greece is presented in the Appendix, which summarizes information of use to both earth scientists and engineers
Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition
Full text linkMetal–semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T′ MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T′ phase, and 2H/1T′ in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T′ junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits