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    社會教育專業化

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    [[abstract]]社會教育這個名詞、概念與活動雖已屆滿百年,惟其主要著作的出版可分三個階段:民國四十年代,相菊潭與鄭明東教授的力作,代表傳統社會教育的創見;民國七十年代,李建興、楊國賜與詹棟樑教授等著作,代表台灣社會經濟發展後,社會教育的新趨勢。本書由年輕一代社會教育學者專家集體創作,代表社會教育教學的一大收穫,也是最近二十年世界各主要國家的社會教育、成人教育與終身教育的大結合、大交流與大發展。

    外籍配偶家庭教育現況及其轉化學習之研究

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    成人行動學習需求之研究

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    教師非制式學習與資訊融入教學能力發展研究

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    [[abstract]]The Key competencies of individuals for national competition such as hands-on capability, information communication technology (ICT) capability and so on, are very essential. In order to deal with this need, Ministry of Education in Taiwan announced a policy to promote the ICT to be used in schools. One of the policy focuses on teachers’professional development to increase the use of ICT at each classroom. Nevertheless, what kinds and what levels of e-competence should be upgraded have never been studied. And the strategy that teachers promote their e-competency by informal learning is very important. Thus, the purposes of this study aim to develop a level checklist of e-competence and to realize the informal learning strategies of teachers in approaching ICT. This study will adapt the focus group , survey, and in-depth interview as the research methods. The results of this study will be implied to the professional development and to enhance the ICT in educational settings.

    Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires

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    [[abstract]]GaN nanowires for high-efficiency optoelectronic devices? The simple method for the large-scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire-like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.

    Catalytic Growth and Characterization of Gallium Nitride Nanowires

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    [[abstract]]The preparation of high-purity and -quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction parameters were applied to systematically optimize and control the vapor?liquid?solid (VLS) growth of the nanowires. The resulting nanowires show predominantly wurtzite phase; they were up to several micrometers in length, typically with diameters of 10?50 nm. A minimum nanowire diameter of 6 nm has been achieved. Temperature dependence of photoluminescence spectra of the nanowires revealed that the emission mainly comes from wurtzite GaN with little contribution from the cubic phase. Moreover, the thermal quenching of photoluminescence was much reduced in the GaN nanowires. The Raman spectra showed five first-order phonon modes. The frequencies of these peaks were close to those of the bulk GaN, but the modes were significantly broadened, which is indicative of the phonon confinement effects associated with the nanoscale dimensions of the system. Additional Raman modes, not observed in the bulk GaN, were found in the nanowires. The field emission study showing notable emission current with low turn-on field suggests potential of the GaN nanowires in field emission applications. This work opens a wide route toward detailed studies of the fundamental properties and potential applications of semiconductor nanowires.

    金屬、半導體奈米晶體在生物檢測及分析上的應用

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    [[abstract]]奈米科技(Nanotechnology)的發展使得一些新的物理及化學性質陸續被發現,對於材料的研發也開啟了一個新的方向。本文將概要地介紹金屬及半導體奈米材料與生物分子結合,分別介紹應用上的實例。最後將簡單地敘述奈米晶體未來在生物科技上的發展趨勢及潛力。

    Fabrication of Two-Dimensional Arrays of CdSe Pillars Using e-Beam Lithography and Electrochemical Deposition

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    [[abstract]]Two-dimensional arrays of high refractive index structures can be fabricated using a combination of e-beam lithography for pattern definition and electrochemical deposition for structure formation. The potential of this method is demonstrated for CdSe, where nanopillars, mushrooms (see Figure), walls, and crosses are prepared. Such arrays have potential in optical device applications such as photonic crystals and waveguides.

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