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Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment
No full textA comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole
Effects of Ionizing Radiation on Three-Dimensional Human Vessel Models: Differential Effects According to Radiation Quality and Cellular Development
No full textLittle is known about the effects of space radiation on the human body. There are a number of potential chronic and acute effects, and one major target for noncarcinogenic effects is the human vasculature. Cellular stress, inflammatory response, and other radiation effects on endothelial cells may affect vascular function. This study was aimed at understanding the effects of space ionizing radiation on the formation and maintenance of capillary-like blood vessels. We used a 3D human vessel model created with human endothelial cells in a gel matrix to assess the effects of low-LET protons and high-LET iron ions. Iron ions were more damaging and caused significant reduction in the length of intact vessels in both developing and mature vessels at a dose of 80 cGy. Protons had no effect on mature vessels up to a dose of 3.2 Gy but did inhibit vessel formation at 80 cGy. Comparison with gamma radiation showed that photons had even less effect, although, as with protons, developing vessels were more sensitive. Apoptosis assays showed that inhibition of vessel development or deterioration of mature vessels was not due to cell death by apoptosis even in the case of iron ions. These are the first data to show the effects of radiation with varying linear energy transfer on a human vessel model. (C) 2011 In Radiation Research Societ
重离子束治癌当中剂量监测探测器标定和校准装置及方法
No full text本发明涉及一种重离子束治癌当中剂量监测探测器标定和校准的装置及方法。其结构特征是在束流轴线上依次放置准直器、剂量监测探测器、迷你型脊形过滤器、水箱和标准电离室，标准电离室置于水箱中。通过标准电离室在水介质中不同深度处吸收剂量的测量得到照射束流微小展宽Bragg峰 (mini-SOBP)在水中的深度位置。在该深度位置处，利用标准电离室对剂量监测探测器进行了标定和校准，得到剂量监测探测器对具有高斯型分布微小展宽Bragg峰治癌束流测量的标定和校准因子。由该标定和校准因子，可以方便地控制肿瘤靶区内物理吸收剂量均匀或生物有效剂量均匀三维适形照射治疗的整个过程，满足实际临床治疗当中不同临床病例治疗的需要，提高了治疗装置的治疗效率
用甜高粱汁液生产酵母葡聚糖的方法
No full text本发明提供了一种利用甜高粱汁液制备酵母葡聚糖的方法，是利用甜高粱汁，通过发酵，分离得酵母经自溶与加酶水解，分离，上清液浓缩成酵母抽提物，沉淀物配成浓度为5～8％的溶液，加入细胞壁重量2～5％的氢氧化钠，在搅拌下于85～95℃反应2～4小时，冷却到40～60℃，分离数次后，用酸调节pH 至中性，继续水洗分离数次，然后浓缩到浓度为5～8％，调pH至3.5～5，升温 60～75℃，保温30～60分钟后调pH至中性，降温水洗、分离数次、干燥即得。本发明方法制备的葡聚糖产品呈淡黄色或黄色，经检测，葡聚糖含量＞80％、总氮＜5％、水份＜5％、灰份＜2％、pH＝6.5～7.5
重离子束治癌当中剂量监测探测器标定和校准装置及方法
No full text<p><font face="宋体" size="3">发明涉及一种重离子束治癌当中剂量监测探测器标定和校准的装置及方法。其结构特征是在束流轴线上依次放置准直器、剂量监测探测器、迷你型脊形过滤器、水箱和标准电离室，标准电离室置于水箱中。通过标准电离室在水介质中不同深度处吸收剂量的测量得到照射束流微小展宽Bragg峰 (mini-SOBP)在水中的深度位置。在该深度位置处，利用标准电离室对剂量监测探测器进行了标定和校准，得到剂量监测探测器对具有高斯型分布微小展宽Bragg峰治癌束流测量的标定和校准因子。由该标定和校准因子，可以方便地控制肿瘤靶区内物理吸收剂量均匀或生物有效剂量均匀三维适形照射治疗的整个过程，满足实际临床治疗当中不同临床病例治疗的需要，提高了治疗装置的治疗效率。</font></p
用于重离子治癌的快速测量bragg曲线探测器
No full text<p><font face="宋体" size="3">实用新型涉及重离子束治疗肿瘤技术的领域，尤其涉及Bragg曲线探测器。一种用于重离子治癌的快速测量Bragg曲线探测器，包括外框架(1)、数个单元电离室(2)，其主要特点是在单元电离室(2)的前方设有不同厚度的水等效体(3)；所述的外框架(1)的前、后两端分别设有入射窗(1-1)和出射窗(1-5)；在入射窗(1-1)和出射窗(1-5)之间设有带凹槽的支撑板(1-2)、信号引出板(1-3)，高压输入板(1-4)；所述的单元电离室(2)包括有与信号引出板(1-3)连接的信号极(2-1)，和与高压输入板(1-4)连接的高压极(2-2)；所述的单元电离室(2)及前方的水等效体(3)置于带凹槽的支撑板(1-2)内。该探测器能在ms量级的时间内实现对入射粒子的Bragg曲线测量。</font></p
Study of the damage produced in 6H-SiC by He irradiation
No full textLattice damage and evolution in 6H-SiC under He ion irradiation have been investigated by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV visible spectroscopy and transmission electron microscopy (TEM). 6H-SiC wafers were irradiated with He ions at a fluence of 3 x 10(16) He(+)cm(-2) at 600 K. Post-irradiation, the samples were annealed in vacuum at different temperatures from 873 K to 1473 K for isochronal annealing (30 min). Thermally annealed He irradiated 6H-SiC exhibited an increase in damage or reverse annealing behavior in the damage peak region. The reverse annealing effect was found due to the nucleation and growth of He bubbles. This finding was consistent with the TEM observation. The thermal annealing brought some recovery of lattice defects and therefore the intensities of Raman peaks increased and the absorption coefficient decreased with increasing annealing temperature. The intensity of Raman peak at 789 cm(-1) as a function of annealing temperature was fitted in terms of a thermally activated process which yielded activation energy of 0.172 +/- 0.003 eV. (C) 2011 Elsevier Ltd. All rights reserved
一种大尺寸超导磁铁叠压铁芯的制备方法
No full text<p><font face="宋体" size="3">带电粒子传输使用的超导电磁铁的制造方法。一种大尺寸超导磁铁叠压铁芯的制备方法。</font></p
一种用高能重离子辐照提高、调制半金属性薄膜材料的磁致电阻的方法
No full text<p><font face="宋体" size="3">发明涉及一种用高能重离子辐照提高、调制半金属性薄膜材料磁致电阻的方法，其措施是：(1)半金属性薄膜的膜厚控制在100纳米到10微米之间；(2)辐照重离子的种类为Aq+，A为选自原子序数10到92号元素中的一种，q+为经加速器剥离过的电荷态数目，为：1≤q≤A的原子序数；(3)辐照重离子的能量范围在100keV到10GeV之间；(4)辐照重离子的辐照量范围为1010ions/cm2到1017ions/cm2。通过本发明方法，能够显著增加以Fe3O4纳米多晶薄膜为代表的半金属性薄膜材料的晶粒绝缘边界、减小表面应力，可以获得高质量的势垒层及势垒界面，使得其室温磁致电阻明显提高并能被施以人为调制。</font></p