Institutional Repository of Institute of Modern Physics, CAS
Not a member yet
5769 research outputs found
Sort by
异甘草素在制备肿瘤放射治疗辅助治疗药物中的应用
No full text本发明属医药技术领域，具体涉及一种从甘草属植物中提取的异黄酮类化合物——异甘草素的新用途，特别涉及其作为制备肿瘤放射治疗辅助治疗药物中的应用。异甘草素作为制备减轻恶性肿瘤放射治疗不良反应，增强恶性肿瘤放射治疗效果的药物的应用，从而为恶性肿瘤放射治疗提供了一种新的可供选择的辅助治疗药物
带运动补偿的高压馈入真空态装置
No full text<p align="left"><font face="宋体" size="3">发明主要涉及一种带运动补偿的高压馈入真空态装置。包括有高压馈入导电杆(22)，导电杆(22)位于真空腔体(9)内，导电杆(22)一端接高压电极(3)，与高压电极(3)对应设有接地电极(2)，导电杆(22)另一端穿过过渡套(21)和外绝缘陶瓷(14)接高压输出件(16)，过渡套(21)通过法兰(11)安装在真空腔体(9)上，外绝缘陶瓷(14)一端通过压环(20)和螺栓与过渡套(21)相连，外绝缘陶瓷(14)另一端安装有压盖(17)，外绝缘陶瓷(14)的两端分别设有屏蔽环(19)和屏蔽球(15)。其消除了额外增加的高压电极及其驱动装置运动阻力，实现对高压电场运动的精确性控制，而且具有灵活、可靠、高真空、体积小、输送电压高的特点。</font></p
重离子束注入同步加速器的方法及其装置
No full text<p><font face="宋体" size="3">发明主要涉及将回旋加速器提供的质量数小于等于40的非全剥离重离子束流注入到同步加速器中的方法及其装置。一种重离子束注入同步加速器的方法，包括有如下步骤：1.将未被全剥离的量数小于或等于40重离子束加速到能量为5.0-10.0MeV/u，重离子束流强为2.0-6.0微安；2.将步骤1中质量数小于或等于40的重离子束偏转到剥离膜，并将同步加速器的中心轨道在注入点的位置凸起到剥离膜处；3.降低步骤2中所述的中心轨道的凸起，剥离后的重离子束注入并填充加速器空间，在同步加速器中作回旋运动。并提供一种重离子束注入同步加速器的装置。设备简单，操作方便，注入效率高的优点，并可以通过调整剥离膜厚度实现重离子束流电荷态的多种选择。</font></p
真空管s s 道式束流调节器
No full text本实用新型主要涉及电真空领域，尤其涉及一种束流调节装置。一种真空管道式束流调节器，包括正高压电极，负高压电极，高压馈线，所述的正高压电极，负高压电极通过密封固定装置平行设置在真空管道内；在真空管道上设有圆盘绝缘装置，所述的正高压电极和负高压电极通过高压馈线与圆盘绝缘装置相连接；所述的圆盘绝缘装置还与正、负高压输出线相连接。本实用新型提供的装置形成的电场水平可以达到10KV以上，真空度高于2×10-5Pa。具有输送电压大、高真空、结构紧凑、使用可靠
一种大尺寸超导磁铁叠压铁芯的制备方法.
No full text本发明涉及带电粒子传输使用的超导电磁铁的制造方法。一种大尺寸超导磁铁叠压铁芯的制备方法，其主要特点包括冲片、检测、粘结端板、机械加工、半铁芯叠压及焊接、整体铁芯装配，在上下磁铁之间加装导向柱，导向柱分别装配在上下铁芯上，通过调试使相互间配合良好，固定上下导向柱的位置；装配时，在上铁芯下降过程快接近超导线圈杜瓦盒时，导向柱开始工作，以保证不会因为上铁芯不能对正而破坏外杜瓦盒。本发明的优点是可以制造叠片磁铁铁芯为20T以上的超导磁铁，磁铁铁芯叠装后采用焊接结构保持铁芯机械尺寸。在保证磁铁磁场强度和磁场精度的同时，采用了合理实用的制造工艺；在冲制，叠压，烘烤，检测等诸多过程中，完成了物理设计到工程实施的转变
Therapeutic techniques applied in the heavy-ion therapy at IMP
No full textSuperficially-placed tumors have been treated with carbon ions at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS), since November 2006. Up to now, 103 patients have been irradiated in the therapy terminal of the heavy ion research facility in Lanzhou (HIRFL) at IMP, where carbon-ion beams with energies up to 100 MeV/u can be supplied and a passive beam delivery system has been developed and commissioned. A number of therapeutic and clinical experiences concerning heavy-ion therapy have been acquired at IMP. To extend the heavy-ion therapy project to deep-seated tumor treatment, a horizontal beam line dedicated to this has been constructed in the cooling storage ring (CSR), which is a synchrotron connected to the HIRFL as an injector, and is now in operation. Therapeutic high-energy carbon-ion beams, extracted from the HIRFL-CSR through slow extraction techniques, have been supplied in the deep-seated tumor therapy terminal. After the beam delivery, shaping and monitoring devices installed in the therapy terminal at HIRFL-CSR were validated through therapeutic beam tests, deep-seated tumor treatment with high-energy carbon ions started in March 2009. The therapeutic techniques in terms of beam delivery system, conformal irradiation method and treatment planning used at IMP are introduced in this paper. (C) 2011 Elsevier B.V. All rights reserved
PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers
No full textPhotoluminescence (PL) spectrum, in conjunction with X-ray photoelectron spectroscopy (XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xe(q+) (18 <= q <= 30), Ar(q+) (6 <= q <= 16) and Pb(q+) (q = 25,35) ions. The intensity of PL emission of GaN layer, including near band-edge peak and yellow luminescence, decreases with increasing fluence and charge state of the incident ions. Finally the PL emission is completely quenched after irradiation to high fluences at high charge state. A new peak at 450 nm appeared in PL spectra of the specimens irradiated with Xe(18+), Ar(6+) and Ar(11+), indicating that radioactive recombination within donor-acceptor pairs (DAPs) during irradiation. After irradiation, XPS spectra show N deficient or Ga rich on GaN surface and XPS spectra of Ga3d core levels indicate spectral peak evidently shifts from a Ga-N to Ga-Ga and Ga-O bond. The relative content of Ga-N bond decreases and the content of Ga-Ga bond increases with the increase of ion fluence and ion charge state. The binding energy of Ga3d(5/2) electron corresponding to Ga-Ga bond of the irradiated GaN film is found to be smaller than that of metallic Gallium (Ga(0)), which can be attributed to irradiation damage. (C) 2011 Elsevier B.V. All rights reserved
