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Studies on a Q/A selector for the SECRAL electron cyclotron resonance ion source
No full text<span style="color: rgb(51, 51, 51); font-family: arial, helvetica, sans-serif; font-size: 13px; line-height: 22px; background-color: rgb(248, 248, 248);">Electron cyclotron resonance ion sources are widely used in heavy ion accelerators in the world because they are capable of producing high current beams of highly charged ions. However, the design of the Q/A selector system for these devices is challenging, because it must have a sufficient ion resolution while controlling the beam emittance growth. Moreover, this system has to be matched for a wide range of ion beam species with different intensities. In this paper, research on the Q/A selector system at the SECRAL (Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou) platform both in experiment and simulation is presented. Based on this study, a new Q/A selector system has been designed for SECRAL II. The features of the new design including beam simulations are also presented. (C) 2014 AIP Publishing LLC.</span
Experimental investigation of a pulse line ion accelerator in Lanzhou
No full text<span style="color: rgb(51, 51, 51); font-family: arial, helvetica, sans-serif; font-size: 13px; line-height: 22px; background-color: rgb(248, 248, 248);">In order to put the Pulse Line Ion Accelerator (PLIA) concept to its practical application, a small experimental platform was built. It was found that the actual axial electric field is smaller than the theoretical calculation, so the accelerated ions will enter into the deceleration zone before leaving the helix, which will seriously affect the acceleration process. Based on the improved parameters, the He+ with 24 keV is accelerated to 55 keV, and the proof-of-principle experiment is completed on this platform.</span
Effectiveness and failure modes of error correcting code in industrial 65nm CMOS SRAMs exposed heavy ions
No full textNormal or abnormal isospin-fractionation as a qualitative probe of nuclear symmetry energy at supradensities
No full textNanoindentation on an oxide dispersion strengthened steel and a ferritic/martensitic steel implanted with He ions
No full textODS steel MA956 and F/M steel T92 were implanted with 30 key He ions to fluences of 3.0 x 10(14) (0.013 at.%/0.0046 dpa), 3.0 x 10(15) (0.13 at.%/0.046 dpa), 3.0 x 10(16) (1.3 at%/0.46 dpa) and 1.0 x 10(17) ions/cm(2) (4.5 at%/1.5 dpa) at room temperature. Nanoindentation and TEM were used to investigate the nanohardness and microstructure change induced by He ion implantation. TEM results showed that He bubbles and a damage zone (similar to 250 nm) were observed in both materials at He concentration of 0.13 at.%, small cracks or connected bubbles in surface near region formed at He concentration of 4.5 at.%. Nanoindentation results showed that evident hardness increase was observed at the depth of 38 nm. The hardness peak at 38 nm shifted to 58 nm at He concentration of 4.5 at.%, which could be associated with the formation of small cracks or connected bubbles in surface near region. The damage layer was thin and close to surface, a method, proposed by Hosemann basing on the "rule of mixtures" model, was used to estimate the hardening effects from defects and He in this layer. The estimated results showed that the hardness increased rapidly with damage at low damage level, and started to increase slowly and presented a saturation trend at the damage level higher than similar to 0.2 dpa. From the hardening fraction, significant hardening occurred for T92 compared with that for MA956, which indicated that ODS steel MA956 was better than F/M steel T92 in hardening resistance induced by He at room temperature. (C) 2014 Elsevier B.V. All rights reserved