InterNano Nanomanufacturing Repository
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Formation of hierarchical silica nanochannels through nanoimprint lithography
No full textHierarchically structured silica nanochannels were fabricated through the combination of supercritical carbon dioxide mediated silica deposition and nanoimprint lithography of a sacrificial polymer template. Highly-ordered mesoporous silica was prepared with either spherical or cylindrical domain level features, similar to 5-6 nm in diameter, to compliment the device level structure of the embedded nanochannels. The hierarchical structure was used as a test device for low-k dielectric materials with a dielectric constant of 2.0 observed
Analysis of light scattering from human breast tissue using a custom dual-optical scanning near-field optical microscope
No full textIn this paper we introduce a custom scanning near-field optical microscope (SNOM) that simultaneously collects reflection and transmission near-field images along with topography. This dual-optical SNOM uses a bent probe, which allows for axial reflection imaging, accurate surface scanning, and easy identification of topographic artifacts. Using this novel dual-optical SNOM, we image desiccated and non-desiccated human breast epithelial tissue. By comparing the simultaneous SNOM images, we isolate the effects of tissue morphology and variations in refractive indices on the forward- and back-scattering of light from the tissue. We find that the reduction in back-scattering from tissue, relative to the glass slide, is caused by dense packing of the scattering sites in the cytoplasm (morphology) in the desiccated tissue and a thin-film of water adhering to the glass slide (refractive index) in the non-desiccated tissue sample. Our work demonstrates the potential of our customized dual-optical SNOM system for label-free tissue diagnostics
Molecular absorption and photodesorption in pristine and functionalized large-area graphene layers
No full textWe studied the photodesorption behavior of pristine and nitric acid (HNO(3)) treated graphene layers fabricated by chemical vapor deposition (CVD). The decrease in electrical conductivity and a negative shift of the Dirac point in graphene layers illuminated with ultraviolet light are caused by molecular photodesorption, while the UV illumination does not degrade the carrier mobility of graphene layers. When graphene layers were treated with concentrated HNO(3), the photodesorption-induced current decrease became less significant than for pristine graphene layers. We suggest this is due to the passivation of oxygen-bearing functionalities to CVD grown graphene structural defects by HNO(3) functionalization, which prevents the further absorption of gas molecules. Our results provide a new strategy for stabilizing the electrical performance of CVD grown large-area graphene layers for applications ranging from nanoelectronics to optoelectronics
Solvent-Assisted Soft Nanoimprint Lithography for Structured Bilayer Heterojunction Organic Solar Cells
No full textWe introduce a novel method to easily fabricate nanopatterns at ambient conditions using solvent-assisted soft nanolithography. For this purpose, a P3HT/PCBM bilayer, one of well-known standard models of solar cell systems, was chosen to optimize bilayer solar cells using the new lithographic technique. The nanopatterns of P3HT made using this method have improved device efficiency compared to planar bilayer heterojunction of the solar cell. The new patterning process creates solar cell devices with a greater than 2-fold increase in power conversion efficiency (PCE) compared to an otherwise equivalent, flat device. This improvement in efficiency is due to the increased interfacial area created by the patterning process. This result demonstrates the feasibility of extensive applications toward nanolithography, relevant to device fabrication, such as electronic devices
Report to the President on Ensuring American Leadership in Advanced Manufacturing
No full textThis document was prepared by the President’s Council of Advisors on Science and Technology (PCAST) and the
President’s Innovation and Technology Advisory Committee (PITAC). It provides a strategy and specific recommendations for revitalizing the Nation’s leadership in advanced manufacturing. The key recommendation in this report is that the Federal Government launch an Advanced Manufacturing Initiative (AMI). The report recommends that AMI be a concerted, whole-of-government effort, spearheaded by the Department of Commerce, Department of Defense, and Department of Energy and coordinated by the Executive Office of the President (EOP), either through the Office of Science and Technology Policy, National Economic Council, or the office of the Assistant to the President for Manufacturing Policy. The Secretaries of Commerce, Defense, and Energy should assign lead responsibility to an appropriate agency or agencies within the Department—such as National Institute of Standards and Technology (NIST) at Commerce, DARPA at Defense, and ARPA-E or EERE at Energy. It is crucial that this whole-of-government effort be complemented by parallel initiatives in the industry and academia. AMI should develop mechanisms to involve these sectors and to draw on their expertise in identifying technological opportunities. An external advisory board that has access to advanced manufacturing expertise should help guide this work
3-D integration requirements for hybrid nanoscale-CMOS fabrics
No full textSeveral nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. However, their integration and interfacing with external CMOS has received only limited attention. In this paper we explore integration challenges for nanoscale fabrics focusing on registration and overlay requirements especially. We address the following questions: (i) How can we mitigate the overlay requirements between nano-manufacturing and conventional lithography steps? (ii) How much overlay precision is necessary between process steps? and (iii) What is the impact on yield if different overlays are used? We propose and evaluate a new 3D integration approach that combines standard CMOS design rules with nano-manufacturing constraints. For a nanoprocessor design implemented in N3ASIC (a hybrid nanowire-CMOS fabric) we show that a 100% yield is achievable even for overlay precisions achievable with current CMOS manufacturing (3σ=±8nm, ITRS 2009) while still retaining 3X density advantage compared to a projected 16nm CMOS scaled design
Nanoinformatics 2020 Roadmap
No full textThe Nanoinformatics 2020 Roadmap is the first broad-based community effort to articulate the comprehensive needs and goals in nanoinformatics. It is based in part on Nanoinformatics 2010: A Collaborative Roadmapping Workshop, which was organized by experts from the community of practice and held in early November 2010. The Roadmap serves to inform the broader nanotechnology community of the value informatics can add to ongoing research and development efforts; it is also intended to stimulate contributions from experts in either nanotechnology or informatics regarding possibilities not foreseen by the initial members of the community of practice. The Nanoinformatics 2020 Roadmap identifies the current stakeholders, needs, capabilities, and connections which will define a successful nanoinformatics program, and outlines plans for developing them. The implementation plans in the Roadmap incorporate a decade-long vision and pathway, providing a realistic timeframe to establish an effective system of nanoinformatics data, tools, and infrastructure. Such a program will enable the community to improve and “travel” on the road to understanding, development, and beneficial application of nanotechnology
The Nanomanufacturing Revolution and Continuing Impact: Nanomanufacturing Summit 2011
No full textAs the impact of public and private sector investments in nanotechnology for more than a decade now continues to evolve, we are moving into a new era whereby a decade of intense scientific research gives way to fundamentally new products that will have significant societal and economic impact. As the predicted billions and trillions of dollars of emerging nano-enabled products enter the marketplace, the interest and focus on nanomanufacturing and the commercialization of nanotechology will grow. Nanomanufacturing processes previously considered fundamental science are now key enablers to solve critical issues in the evolution of many products, fueling the innovation cycle to realize completely new products. These processes include bottom-up directed assembly, top-down high-resolution patterning and manipulation, molecular and biological systems engineering, and hierarchical integration across multiple length scales.
The impact of nanomanufacturing has already begun to be realized with examples that include directed self-assembly (DSA) for high-density bit patterned data storage media, the inclusion of DSA in the roadmap for the semiconductor industry, and the scaled production of nanocomposites and nanomaterials via both new and existing manufacturing infrastructure. Nanostructured materials such as carbon nanotubes, graphene, and a range of nanoparticle materials have achieved new levels of performance for applications such as transparent electrodes, thin film transistors, next generation electronics, energy storage, nanomedicine, renewable energy, and resource remediation. This range of nano-enabled products represents both significant markets as well as critical national needs.
Also included: Graphene Mass Production Comes Closer with Bulk Wet Chemical Exfoliation of Graphite, Fabrication of Nanoscale Plasmonic Sensing Structures Over Large Areas, NanoBusiness NYC Conference, April 6-7 Agend