InterNano Nanomanufacturing Repository
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Nanotechnology Training for K12 Science Teachers at the NSEC Center for Hierarchical Manufacturing
No full textThe CHM conducted its fifth annual Nanotechnology Summer Institute for K12 science teachers at UMass Amherst, July 11-15, 2011. Twenty-seven teachers learned from 10 nanotechnology modules with many hands-on activities for the classroom, including a lesson on self assembly. The teachers used these modules to develop curriculum plans that meet their particular teaching needs and satisfy state standards.
http://www.umassk12.net/nano
Enhancing New Areas of Content on InterNano, the National Nanomanufacturing Network Welcomes New Contributing Editors
No full textIn an effort to better serve the information needs of the nanomanufacturing community and stakeholders, the NNN is expanding the content areas on InterNano, the online information portal for the NNN, providing expert reviews, highlights, and menu additions on topics including Nanomanufacturing process control, Technology Transfer, Commercialization, and Economic Impact of NanoTechnology. Central to enhancing the information content provided is the addition of several new editorial staff to InterNano having specific expertise and backgrounds unique to these topics. As such, the National Nanomanufacturing Network welcomes the new contributing editors to its team.
Also included: UMass Amherst Research Develops 'Second Skin' Military Fabric to Repel Chemical and Biological Agents, NanoBusiness Interview —
Dr. Alan Rae, CEO, NanoMaterials Innovation Center, and European Nanoelectronics Industry Proposes to Invest 100 Billion Euros for Innovatio
GaAs Doping Superlattice Emitters
No full textIn a bulk semiconductor, the light emission wavelength is limited by the bandgap energy. Thus, to achieve 2-4 micron wavelength emission requires narrow bandgap semiconductors. A novel approach for emission from semiconductors at wavelengths less than the bulk bandgap is to employ doping superlattices [1, 2]. We have achieved the first laterally defined GaAs short period doping superlattices and observe emission below the bandgap energy. In a doping superlattice, alternating p-type and n-type layers are introduced, as sketched in Figure 7.7.1, which create a succession of lateral pn junctions. The result of the electrostatic band bending perpendicular to the alternating-doped regions is to introduce confinement for electrons and holes and enable radiative recombination at wavelengths below the bulk bandgap. Intermeshed n- and p-type regions that are microns in length but with widths varying between 20 to 100 nm have been defined in the surface of a 100nm thick membrane using electron-beam lithography; an example of one dopant region is shown in the inset of Figure 7.7.1. After the mask definition, ion implantation is used to introduce one dopant, and the second region is defined (after careful alignment) to create the varying dopant grating periods. Planar light emitting diodes have been fabricated and characterized within GaAs due to its concomitant mature processing to demonstrate the viability of below bandgap light sources. Figure 7.7.2 shows the electroluminescence versus the period of the doping superlattice; as expected increasing period leads to longer wavelength emission. Doping superlattice light emitting diodes can be heterogeneously integrated onto flexible substrates using printed assembly [3]
Reconfigurable Nanowire Fabric for Computation: Simulations and Experimental Prototyping
No full textThe Reconfigurable Nanowire Fabric is targeted as a scalable alternative to CMOS FPGAs. Logic and memory functionalities can be mapped on to programmable nanowire arrays with reconfigurable cross-nanowire field effect transistor (xnwFETs) crosspoints. Design choices across device, circuit and architecture level are geared towards reducing manufacturing requirements – junctionless xnwFET devices eliminate the need for stringent control of doping profile, regular arrays with limited customization imply mitigated overlay precision requirements, novel circuit styles eliminate the need for arbitrary fine-grain sizing, doping and routing. Furthermore, this fabric uses a fine-grain device-level reconfiguration approach that could have an order-of-magnitude area/power/performance improvement vs. conventional schemes
