Engineering Conferences International
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Discovering and engineering novel prodrug activating and detoxifying enzymes to improve targeted cell ablation
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Oxidative biocatalysis without oxygen – Applying the less used side of hydrogenases
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The discovery and characterization of tungsten insertase in tungsten cofactor biosynthesis
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Metagenomic discovery and directed evolution of genes that defend against chemotherapeutics
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Sustainability and oxidase biocatalysis – An overview
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b-NAD as a Building Block in Natural Product Biosynthesis
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Invited - Characteristics of oxide TFT using atomic-layer deposited InOx-based metal oxide channel
Get PDFInOx-based metal oxide semiconductors (InOx-OSs) including In-Ga-Zn-O (IGZO) [1,2] have been investigated as active channel materials in oxide thin film transistors (TFTs) for flat-panel display applications. These InOx-OSs have recently attracted attention for n-channel field effect transistor (n-FET) in back-end of line [3-5] and ferroelectric FET with HfO2-based ferroelectric gate insulator [6] First, InOx-OS films were deposited vis sputtering method. Considering to the growth of ultra-thin films, atomic layer deposition (ALD) technique is of great interest in the angstrom-scale thickness controllability, atomically smooth surface and composition control of multicomponent films as well as excellent step coverage on three-dimensional structure. The superior transistor performance of TFTs with ALD-In2O3 and IGZO channels and n-FET with ALD-In2O3 channel have been demonstrated [3,4,7]. Here, In2O3 films have been deposited via ALD with a combination of various precursors and oxidant gases such as trimethyl indium-O2, O3, H2O, or H2O2, and ethylcycropentadienyl indium (InEtCp)-H2O/O3 [8-10].
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Invited; Ferroelectric phase transformation accelerated in nanolaminate HfO2-ZrO2 thin films
Get PDFFerroelectric HfO2 thin films have a potential to realize high-density nonvolatile memories and neuromorphic circuits for next generation computing. Thus, developments of ferroelectricity-based devices such as FeRAM, FeFET, and FTJ are in progress [1]. Among the dopant engineering studies in HfO2 crystalline films to attain orthorhombic phase that shows ferroelectricity [2], HfO2-ZrO2 solid solution system is recognized as a convenient choice because good ferroelectric properties are achieved at the metallic element ratio of Hf:Zr = 50:50. This character has also promoted the investigations of nanolaminate films and superlattice films that consist of alternately deposited HfO2 and ZrO2 ultrathin films [3-6]. In this work, we present the advantage of nanolaminate HfO2-ZrO2 thin films from the viewpoint of phase transformation kinetics.
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Spinel, an overlooked crystalline phase of Igzo
Get PDFIn the family of semiconducting oxides, InGaZnO4 (IGZO) is most attractive due to the absence of mobile holes and the preservation of a relative high electron mobility when the material is in the amorphous phase. Especially this last characteristic enables low deposition temperature (Td), beneficial for the application as semiconducting channels of thin film transistors (TFT) in optical displays and 3D memory elements. However, a disadvantage related to the amorphous phase is the distribution of bonding energies of oxygen anions, which is directly related to the distributed distances with respect to the neighboring metal cations [1], leading to free electron formation readily at low temperature.
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Fully automated on demand cell culture media preparation for perfusion
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