Engineering Conferences International
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Enzyme engineering for valorization of agrowaste-derived levulinic acid to versatile 4-hydroxyvaleric acid
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Post-transcriptional association of proteins to study spatial organisation within multi-enzyme complexes
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An engineered gastrointestinally stable microbial leucine decarboxylase for potential treatment of maple syrup urine disease
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Exploring transaminase stability for biocatalysis
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Invited; An atomistic understanding of the oxygen vacancies in Pt/TiO2/Ti resistive random access memory: Ab initio study
Get PDFResistive random access memory (ReRAM) is a promising next-generation device. However, the mechanism of the resistive switching is still under debate. In the resistive switching metal oxides, it has been generally known that oxygen vacancies are the mobile species and that the conducting filaments (CFs) are composed of the concentrated oxygen vacancies. The atomistic behavior of these concentrated oxygen vacancies is expected to be different from that of an isolated oxygen vacancy, but it has not been intensively considered in most studies. Therefore, we performed ab initio calculations on a model system of Pt/TiO2/Ti device to elucidate the characteristics of the oxygen vacancies, such as the cohesive energy, oxidation number, and diffusion barrier energy, according to the concentration and configuration of the oxygen vacancies.
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Invited; Vertical channel-all-around IGZO FET for low latency, high-density 2T0C 3D DRAM application
Get PDFDRAM devices are an essential component of most digital devices and they play a crucial role in the development of cloud computing, edge computing, Internet-of-Things and Artificial Intelligence. Currently, DRAM scaling is now facing challenges largely due to the mismatch of the reduced storage capacitance and increasing off-current. IGZO based field-effect transistors (IGZO FETs) are very well known for their very low IOFF (\u3c10-22A/µm), representing a solution for reducing the DRAM cell leakage. The demonstration of BEOLcompatible long-retention 2T0C DRAM cell based on the IGZO-FETs shows a very promising approach to overcome the mismatch challenge of the traditional 1T1C DRAM cell
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Invited; Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications
Get PDFGeSn and related group-IV alloys have been much attracted as one of novel semiconductor materials for nextgeneration nanoelectronics, optoelectronics, and thermoelectronics applications. GeSn semiconductor promises high carrier mobility, highly efficient optoelectronic conversion, low thermal conductivity, and also low thermal budget process those properties are appropriate for the integration on Si ULSI platform. On the other hand, there are some challenges for practical applications of GeSn thin films integrating into Si ULSI. One is realizing a high substitutional Sn content over several percents in GeSn and related alloys, since the thermal equilibrium solid-solubility of Sn in Ge is as low as 1% (0.1% in the case of Si). In addition, the strain control of GeSn heteroepitaxial layers with a high crystalline quality is required for energy band engineering. Thus, it is necessary to understand and establish the crystal growth science and technology of GeSn-related group-IV thin films to control those crystalline and electronic properties.
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The effect of hydrogen in the HIP treatment of additive manufactured IN718
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Effects of C and Al on hydrogen embrittlement mechanism in medium Mn-Ni steels
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Co-composted biochar improves barley yield, manure use efficiency and offsets chemical fertilizer demand in organic agriculture under low rainfall conditions
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