Engineering Conferences International
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Device layout dependence of PBTI in back-gated IGZO TFTs
Get PDFThe attractive electrical and processing properties of IGZO-based TFTs make these devices promising in various applications, but primarily in BEOL logic and DRAM cells [1,2]. IGZO has been shown to meet the performance requirements of many applications such as display and DRAM selectors [2]. However, the reliability of industry relevant gate-dielectric based IGZO devices has been only recently tackled [3,4]. In addition, the role of device layout and channel geometry (depending on the target application) has not been investigated. In this work we systematically study BTI degradation in 2 main families of back-gated IGZO transistors based on a 10nm thermally grown SiO2 as gate-dielectric, each one differing in S/D access geometry and/or channel width. In the first one, the S/D contacts have very large area with ~5000μm2 (M0 devices), while the second one is based on much smaller contact area of 135nm × device width W (M1 device) (Fig1, left). For each family, gate lengths Lg spanning 2 orders of magnitude (from ~200nm to ~30μm) are investigated to detect short channel effects. Vth0 is extracted at a fixed current level of 100pA×W/L for both architectures (Fig 1., middle). While M0 devices suffer from a decrease of Vth0 as a function of Lg, the Vth of M1 devices is very stable for all measured Lg.
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Invited; Poly-oxide Tft for flexible electronics
Get PDFWe report poly-oxide TFTs with low temperature crystallization on polyimide substrate. We used conventional gate insulator of SiNx/SiO2 and IGO semiconductor for high performance poly-oxide TFTs. The electrical and structural properties of the TFTs are studied, exhibiting mobility over 50cm2/Vs and excellent stability. TFT circuits such as gate driver and ring oscillator are also discussed together with stability under positive gate bias and NBIS
Invited; Material challenges in HfO2-based ferroelectric memory devices
Get PDFFerroelectric memory devices have been considered one promising candidate for the next generation semiconductor devices for both conventional and future computing paradigm.[1-5] Especially, the discovery of ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 disruptively accelerated the physical scaling down and performance improvement of the ferroelectric memory devices. The new functionality induced in the conventional gate insulator of the metal-oxide-semiconductor field-effect-transistor by adding a small amount of dopants with a subsequent crystallization annealing is highly attractive to both academia and industry.
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Insights into the use of Flash Sintering methods to prepare catalytic materials
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Multi-Phase Flash Sintering: The Next Natural Step in Flash Sintering Evolution
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Investigation of the Mechanisms of Flash Sintering in Ceramic Materials
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Advanced numerical characterization of a wave-mixed bioreactor used in the biopharmaceutical industry
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Unusual behavior of long cracks at low dk: Marci effect
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Correlating nature of precipitates with environmental degradation in aluminum alloys
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