Engineering Conferences International
Not a member yet
9271 research outputs found
Sort by
Accessing bacterial dark matter for improved enzyme discovery and engineering
Get PDFPlease click Additional Files below to see the full abstrac
Discovery, evolution and synthetic applications of enzymes for chiral oxygen-containing compounds
Get PDFPlease click Additional Files below to see the full abstrac
Analysis of carrier injection under high temperature AC operation in top gate IGZO TFTs
Get PDFAbstract– With the development of high-quality displays, metal oxides gradually become a popular active layer in TFTs [1]. In this work, InGaZnO thin film transistors with double-layer oxide are investigated. The oxide layer is divided into top and bottom layers. We improve the characteristics and reliability of the device through the design of double-layer oxide stack structure. The bottom oxide layer is deposited with a lower SiH4 flow rate, and the top oxide layer is deposited with a higher SiH4 flow rate. By increasing the SiH4 flow rate of the top oxide layer, two effects can be achieved. Firstly, it is beneficial for speeding up the film deposition process. Furthermore, the hydrogen residue passivates the dangling bonds in the oxide layer and increases the bonding amount of silanol groups, SiO-H, and achieve hydrogen channel doping [2]. By modulating the SiH4 flow rate of the top oxide layer, the basic characteristics of the devices and the reliability under alternating current (AC) operation are improved. In this work, we use three waveform types of switch process to analyze the degradation under AC stress, and the physic mechanism is proposed subsequently [3-4]. After AC stress, the top oxide layer with higher SiH4 flow rate has a smaller threshold voltage right shift, and the reliability is significantly improved.
Please click Download on the upper right corner to see the full abstract
Extract coefficients of thermal expansion of TaN thin film by tuning the N2 gas flow in the PVD process
Get PDFCoefficients of thermal expansion (CTE) mismatch between different materials is an essential and critical concern in semiconductor development. During the manufacturing processes, the thermal budget will induce residual stress, occurring the deformation of the material. In the worst case, the thin film or the elements would be broken or failed. [1] However, these mechanical properties are difficult to determine and measure. In this study, we used the simple micro-cantilever beams array as the test key which was fabricated by the MEMS process. We deposited the TaN thin film on the different length cantilevers and then exploited the double layer method and Stoney equation to analyze its mechanical properties [2] [3]. Figure 1 shows the micrograph of the SiO2 cantilever beam deposited with TaN thin film and whose geometry size is also measured by the SEM system.
Please click Download on the upper right corner to see the full abstract
Invited - Mesoporous titania based synaptic device characteristics
Get PDFIn this study, thin films of mesoporous titania (meso-TiOx) were developed by the EISA method as an active layer of memristor devices. The devices were studied over the comparison of analog resistive switching behavior among three different patterned top electrodes (e.g. crossbar, cap structure, and lateral electrode) along with the various top and bottom electrodes such as Al, Pt, ITO and Au. The IV characteristics with SET (ON) and RESET (OFF) state implies that meso-TiOx shows memristive behavior for all device structures. This study also demonstrates dependence of top electrode materials in I-V characteristics.
Please click Download on the upper right corner to see the full abstract
Base pressure controlled fabrication of high-mobility In2O3 thin film transistors
Get PDFTransparent amorphous oxide semiconductors (TAOSs) have been extensively studied as active channel layers of thin-film transistors (TFTs) for next-generation flat-panel displays. Among TAOSs, amorphous In–Ga–Zn–O (a-IGZO) TFTs have now become the backplane standard for active-matrix liquid-crystal displays and activematrix organic light-emitting diode displays because of their reasonable field-effect mobility (μFE) of over 10 cm2 V−1 s−1, extremely low leakage current, low process temperature (\u3c350 °C), and large-area scalability [1].
Please click Download on the upper right corner to see the full abstract
Invited; Contact effects towards mainstream thin-film transistor applications
Get PDFThin-film source-gated transistors (SGTs) [1] have been developed steadily over the last couple of decades, demonstrating important properties which span virtually all thin-film material systems [2], [3]. By virtue of their control mechanism, which relies on an energy barrier deliberately engineered at the source, they present impressive intrinsic gain [4], [5], tolerance to variability [6], stability [7], and temperature sensing utility [8]. Recently, numerous groups have adopted the architecture [2], [3] and conceptual evolutions have led to new and highly functional TFT devices [9]–[11]. As the contact-controlled nature of these transistors introduces a relatively large temperature dependence of drain current, and also drastically reduces the current density, for a given geometry, recent research (Fig. 1-3) is focusing on shifting the balance away from these limitations [12]–[14], without compromising the structure’s advantages.
Please click Download on the upper right corner to see the full abstract
Crystallinity of In-Ga-Zn-oxide (IGZO) in CAAC-IGZO vertical FET
Get PDFOxide semiconductor field-effect transistors (OSFETs) are actively developed [1]. In particular, there are many reports on a typical oxide semiconductor, In-Ga-Zn oxide (IGZO) [2]. An OSFET is fabricated with a planar structure in many cases; however, a vertical FET (VFET) with a current path perpendicular to a substrate can be fabricated with an area overhead comparable to one trench hole, and is gathering attention [3]. The VFET structure enables OSFETs to be highly integrated, and also allows the resolution of displays to be higher.
Please click Download on the upper right corner to see the full abstract
Strategies for small-scale perfusion cultures in ambr®250 HT bioreactor system
Get PDFPlease click Additional Files below to see the full abstract
Scalability of CO2 stripping efficiency from bench (3 L) to pilot scale (200 L) for supporting intensified bioprocesses
Get PDFPlease click Additional Files below to see the full abstract