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Imaging hydrogen interactions with materials at the nanoscale: SIMS-based correlative microscopy
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Hydrogen embrittlement susceptibility of deposited nickel-based alloy 82
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A synthetic biology approach to Vitamin B3 production from coal tar using engineered enzymes
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Biochemical characterization of a SusD-like protein involved in glucooligosaccharide utilization by a cow rumen uncultured Bacteroidales
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Transforming protein engineering: advanced integration of deep learning and 3DM technology for superior protein function predictions
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Invited - Organic electrochemical transistors for sensing applications
Get PDFOrganic electrochemical transistors (OECTs) have been successfully used in numerous sensing applications, such as biosensors, photodetectors and chemical sensors. Our group have been working on OECT–based sensors for many years. In this talk, I will introduce the following applications: (1) High-performance biosensors based on OECTs. By modifying the gate electrodes of OECTs, we have realized the detection of various type of biomolecules, such as IgG antibody, protein biomarkers and RNA. For example, portable and ultrasensitive COVID-19 IgG detection has been achieved with low-cost and flexible OECTs.[1] (2) OECTs based on highly oriented 2-dimensional conjugated metal-organic frameworks (2D c-MOFs) (Cu3(HHTP)2).[2] The ion-conductive vertical nanopores formed within the 2D c-MOFs films lead to the most convenient ion transfer in the bulk and high volumetric capacitance, endowing the devices with fast speeds and ultrahigh transconductance. Ultraflexible device arrays are successfully used for wearable on-skin recording of electrocardiogram (ECG) signals along different directions, which can provide various waveforms comparable with those of multi-lead ECG measurement systems for monitoring heart conditions. (3) Highly sensitive photodetectors based on perovskite solar cell-gated OECTs.[3] The devices show ultrahigh sensitivity and fast response speeds. They can track photoplethysmogram signals and peripheral oxygen saturation under ambient light and even provide a contactless remote sensing, offering a low-power and convenient way for continuous vital signs monitoring. (4) Flexible phototransistors based on 2D c-MOFs (Cu3(HHTT)2) thin films.[4] The devices exhibit reliable photo-responses at room temperature in a wavelength region from ultraviolet (UV) to mid-infrared (MIR). Moreover, the photodetectors can show a typical synaptic behavior and excellent data recognition accuracy in artificial neural networks. These works indicate that organic transistors are excellent transducers for flexible/wearable electronics.
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Invited - Spiking neuron circuits in ULSIC vs TFT technologies
Get PDFRecent advances on computing systems have enabled increasing success of algorithms using artificial intelligence. Researchers are now exploring new computational paradigms and materials to enable computing at the level of the device, allowing increased privacy and also reduction in energy. One of the most promising techniques is to realize circuits that imitate how neurons in biological brains function. Spike-based neural networks have been shown to hold more computational power than other neuromorphic architectures and their integration into mainstream computing is projected to herald a new age of computational power. Integrating neuron circuits with the functionality of materials used in flexible electronics is likely to open up a large field of applications, most notably for sensors for continuous health monitoring. In traditional MOFET technologies, spiking neuron circuits are typically operated in the deep subthreshold in order to take advantage of the exponential dependence of Vg to achieve the spiking action and also to optimize energy consumption. Nevertheless, this gives rise to some challenging problems when implemented in flexible technologies where the desire for using low cost and low temperature processes leads to lower mobility and much greater variability in device processing.
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Solution processed ultrawide bandgap insulator to semiconductor conversion of amorphous gallium oxide via fermi level control
Get PDFSilicon and more recently wide bandgap (WBG) semiconductor materials have dominated the integrated circuit (IC) and thin-film transistor (TFT) space, respectively. For instance, Si technology is widely used in complementary metal oxide semiconductor (CMOS) architectures and as conventional channel material in TFTs in its amorphous and polycrystalline phases. On the other hand, WBG semiconductors such as amorphous InGaZnO have been recently poised to replace a-Si as the dominant TFT channel material especially in modern displays for their superior mobility, transparency, and low temperature processability. Nevertheless, a shift towards ultrawide bandgap (UWBG) semiconductors which have bandgaps (Eg) larger than 4.0 eV unlocks additional properties such as higher breakdown voltage, excellent transparency at wider wavelength range, and harsh environment resilience [1].
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Invited; New development on plasma-based copper etch at room temperature
Get PDFCopper (Cu) is the most popular interconnect material for ULSICs, large-area TFTs, and many optoelectronics. Its high conductivity is critical to signal transmission. It also has high reliability which warranties the product’s long lifetime. However, Cu cannot be etched into fine lines using the conventional plasma etching method due to the low volatility of the reaction product. There are many efforts in removing the plasma-Cu reaction product, such as exposing the surface to the high ion bombardment energy or high energy light source. They are not suitable for production requirements with regard to the etch rate, uniformity, and cost. The CMP method was introduced to the industry to solve the problem. Although it is widely used in IC production, there are many issues, such as complicated process steps, poor endpoint control, dishing, high cost, and potential environmental contamination.
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Tri-layer self-aligned structure indium gallium zinc oxide thin film transistor with optical synaptic plasticity
Get PDFSince the 1950s, computer computing has been governed by the von Neumann architecture, which allows data to be transmitted across the processor and memory for computation. Nowadays, the demand for large amounts of information transmission has limited the processing speed by the memory bandwidth and generated higher power consumption. The Human brain can perform high-speed operation, store and calculate as one, so the human neuromorphic computation is the next-generation architecture to solve the “von Neumann bottleneck” [1- 2]. In this work, we have successfully developed tri-layer self-aligned structure indium gallium oxide (IGZO) thinfilm transistors (TFTs) with optical-synaptic plasticity. The channel conductance of IGZO TFTs would be modulated after the pulse voltage input from gate electrode.
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