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CATALYZING GREEN CHEMISTRY: In silico protocols for the efficient discovery and design of industrial enzymes
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GAP-type low-temperature polycrystalline silicon thin film transistors for light sensing photo-transistor application
Get PDFRecently, ultra-high resolution with biometric recognitions such as fingerprint sensing has been a major trend throughout the whole display industry. In order to meet the needs of high screen ratio, high sensitivity to read out, low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) is considered one of the candidates for sensing application. Unlike photodiode, LTPS photo-transistor structured as transistor makes it possible to sensing under different region (off-state or on state) with relatively small sensing area.
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Invited; Circuit architecture and pixel array driving methods for AMOLED and Mini/Micro-LED displays
Get PDFThis work contributes to our recent efforts in thin-film-transistor-based (TFT-based) pixel circuits and driving schemes for active-matrix organic light-emitting diode (AMOLED) and mini/micro-light-emitting diode (mini/micro-LED) display technologies. The pixel circuits incorporating the specific benefits of various driving methods are presented. For application in high-resolution mobile AMOLED displays, a new 6T2C pixel circuit using low-temperature polycrystalline silicon (LTPS) TFTs is proposed. Adopting a parallel addressing scheme extends the effective compensation times for operating threshold voltage (VTH) compensation in the pixel circuit. The effectiveness of the VTH compensation is confirmed that displayed red, green, and blue images with long compensation times are more uniform than that with short compensation times. Therefore, the proposed pixel circuit is suitable for use in high-resolution AMOLED displays. Mini/micro-LED displays with self-emission, high brightness, and long lifetime are promising for a new generation. However, cost and driving schemes remain barriers to real product applications. Recent advancements in pulse-width modulation (PWM) driving methods are proposed for mini/micro-LED displays.
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Invited; TFT circuits for driving sensors and actuators on flat panels
Get PDFThin-film transistor (TFT) technology is critical for the fabrication of modern flat panel displays. TFT technology can be used in many more emerging applications. In previous work, we demonstrated the capabilities of a-IGZO TFTs in the fields of NFC tags, temperature sensor readout, touch screen communication, active pixel X-ray detectors, fingerprint detectors, memory blocks and microprocessors [1]. Amorphous oxide semiconductors like a-IGZO have two main limitations, however: only n-type devices exist, and the mobility is quite limited. In addition, in the past, no stable and reliable TFT FAB technology was available. In this paper, we improve on these previous demonstrations by using LTPS transistors, available as fab service [2,3]
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Invited; ALD of robust amorphous oxide TFTS with turn on at the Boltzmann limit
Get PDFThe development of amorphous oxide semiconductors have driven great advances in display technology. These materials are poised to expand into new applications by heterointegration at the back-end-of-line (BEOL) of Si CMOS for diverse uses in power harvesting, conversion and management as well as in-memory computing and AI hardware. For acceptance in IC foundries, atomic layer deposition (ALD) is an attractive technology with nanometer-scale precision. Recently, significant advances have been made in ALD processes for both n- and ptype oxide semiconductors [1], [2]. Here, we report robust thin film transistors (TFTs) made using n-type zinc-tinoxide deposited by ALD, with excellent robustness to aging and bias stress. The use of an in situ gate insulator formed by ALD enables a sub-threshold slope (SS) at the Boltzmann limit of 60 mV·dec-1 at room temperature.
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Invited; HfZrO-based ferroelectric capacitors and FETs for ultralow-power signal processing
Get PDFSince the discovery of ferroelectricity in HfO2-based dielectric films in 2011 [1], MFM capacitors and FETs using HfO2-based thin films as dielectrics have attracted strong interest. Thus, active research and developments have been conducted for various applications including memory, logic, and AI computing with extremely low power consumption. In this paper, we introduce our recent research on a variety of HfZrO2 (HZO)-based ferroelectric devices such as FeRAM [2-3], FeFET memory [4-8], anti-ferroelectric FETs [9-10] and reservoir computing devices [11-13], for ultralow-power signal processing.The high polarization reversal voltage associated with the high coercive field of HZO films makes it difficult to achieve the low voltage operation of HZO FeRAM. Here, scaling HZO film thickness is effective in a reduction of the supply voltage of FeRAM with HZO MFM capacitors. It has been found through a systematic study on ferroelectric characteristics of Hf0.5Zr0.5O2 films with a thickness from 9.5 to 2.8 nm [2, 3] that scaling HZO film thickness to 4-5 nm can reduce operating voltage below 1 V (~0.8 V) with sufficient 2Pr by performing 106 cycles of wakeup. Also, the electric field causing dielectric breakdown can significantly increase by HZO scaling. The experimental endurance characteristic of 4-nm-thick HZO has indicated that the maximum cycle times determined by dielectric breakdown is around 1010 and 1012 times at 4 MV/cm and 3 MV/cm (1.2 V), respectively, under a pulse voltage operation of 200 kHz.
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Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices
Get PDFInterest in transistor-based ferroelectric memory (FeFET) using ferroelectric HfO2[1] as a candidate for nextgeneration memory devices has been growing, and FeFETs with a three-dimensional stacked structure (3DFeFET) have been proposed[2]. Recently, amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O have been mentioned as a candidate channel material, and it is expected to suppress the characteristic degradation caused by the formation of interface layers, which is a problem with Si-based materials [3]. deposition (ALD) technology is required to apply AOS to 3D-FeFETs. Conventional AOS are mainly quaternary, and have been designed for display applications that require low-temperature deposition.
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Invited; What can we do with ferroelectric gate?
Get PDFThin film transistors (TFTs) are one of the key devices in flat panel displays and oxide channel TFTs are currently employed in such applications. Adding functionality to TFTs is an interesting topic for exploring new applications and ferroelectric materials are promising candidates to add functionality to TFTs. When the ferroelectric material is used as a gate insulator, the device has nonvolatile memory function. In addition, we pointed out that the ferroelectric gate can induce much larger charge density than the conventional paraelectric gate insulator [1]. As a result, conductive oxide such as indium-tin oxide (ITO) can be used as a channel, if the thickness is sufficiently thin. Figure 1 show transfer curve of a ferroelectric-gate TFT using Y-doped Hf-Zr-O (YHZO) as the gate insulator and 13-nm-thick ITO as the channel [2].
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Invited; P-channel metal oxide thin film transistors for flexible CMOS logic: Challenges and opportunities
Get PDFThe ‘unique selling point’ of thin film transistors (TFTs) compared with MOSFETs is that the former do not require the substrate to be a semiconducting material. It is for this reason that TFTs are required for active matrix display backplanes. However, the development of the ‘Internet of Things’ (IoT) presents a new opportunity for TFTs as it becomes possible to build complex logic or memory circuits on flexible substrates that can be more easily incorporated into products such as clothing or packaging without the form factor restrictions that rigid semiconducting substrates impose. There have been recent reports of the successful fabrication of basic microprocessors comprising TFTs on plastic substrates instead of MOSFETs [1].
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Oxygen transfer rate model for cell-free and predictive D.O. control in intensified bioreactor processes
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