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Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
No full textInternational audiencePulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes for semiconductor device fabrication. Notably, it can provide ultrafast (~ns) and high-temperature (>1000°C) profiles. When the maximum temperature exceeds the melting point, a solid-liquid phase transition occurs, followed immediately by rapid recrystallization. This unique annealing mechanism raises questions about dopant diffusion and residual defects not only in the recrystallized region but also just below it. Since power devices require micrometer-sized junctions, high laser energy densities (ED) are necessary. These ED have been shown to promote the incorporation of complex impurities from the surface and the creation of defects at the liquid/solid interface. This paper reports on the impact of laser annealing at high energy densities (up to 8.0 J/cm²) on leakage current using Schottky and PN diodes and DLTS measurements. Various laser annealing conditions were used, including energy densities ranging from 1.7 to 8.0 J/cm² and 1 to 10 pulses. Our results suggest that the solubility of vacancies in silicon is fixed by the maximum temperature reached and the energy density. Increasing the number of laser pulses enables one to reach the maximum vacancy concentration and promote diffusion towards the surface. Concurrently, the diffusion of complex impurities into the melted region enables coupling between the two defect types, creating trap centers responsible for degrading the leakage current
Scaled Vertical Transport Gate-All-Around Nanostructured Channel (Nanosheet/Nanowire) Technology for Advanced CMOS Devices
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3D Nanoelectrode Arrays for High-Resolution Bioelectronic Interfacing with In Vitro Neuronal Networks
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Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors
No full textResearch on transistors with various architectures is crucial for developing high-performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint. Simulation studies have shown that transistors fabricated using a U-shape channel have a higher functionality as their natural geometry enables the realization of gate-all-around structures and long channel lengths within a small footprint. The experimental realization of the transistor is essential for exploring circuit applications. This paper presents the process integration route and the first experimental results of a U-shape ambipolar Schottky barrier field effect transistor. Also, a detailed explanation of the challenges in fabricating a 3D transistor and the improvement steps are given. The fabricated device demonstrates highly symmetrical on-currents for both p-and n-branches. Self-aligned contact formation and atomic force microscopy imaging are used to simplify fabrication and facilitate 3D structural monitoring. In addition, the formation of self-aligned contacts in the proposed device architecture is significantly simplified compared to traditional 3D architectures. TCAD simulations are also performed to support the experimental findings and demonstrate the device's future potential and scalability. In conclusion, it effectively addresses the challenges of the fabrication of 3D transistors and drives innovations in device design with its silicon-on-insulator body.</div
Plateforme d'exposition aux ondes RF et sa caractérisation en dosimétrie
No full textInternational audienceAvec la multiplication des applications en radiofréquences et l'apparition de nouvelles normes dans les télécommunications, il est essentiel d'évaluer l'impact des ondes électromagnétiques sur les organismes vivants et de déterminer si ces ondes présentent des risques potentiels pour la santé. La réalisation de telles études nécessite des systèmes d'exposition précis, calibrés et garantissant des conditions expérimentales reproductibles avec une forte puissance statistique. Or, la littérature ne présente pas de système d'exposition qui permette une forte redondance des tests réalisés dans des conditions contrôlées. Pour répondre à ce besoin, cet article présente une plateforme d'applicateurs RF conçus pour générer localement un champ électromagnétique en champ proche, spécifiquement adapté à l'utilisation de plaques à puits standards, couramment employées par les biologistes pour réaliser des tests à haut débit et compatibles avec les outils d'analyses biologiques in vitro standard de fluorescence qui sont à utiliser après une exposition aux ondes RF. L'article propose une description détaillée de l'un de ces applicateurs ainsi que la méthodologie développée pour réaliser sa caractérisation en dosimétrie à la fréquence de 2.3 GHz
Localized integration of iron-based nanoparticle micromagnets on planar inductors for RF applications
No full textInternational audienceHigh permeability magnetic cores are often used in electronic components to concentrate electromagnetic field lines in order to enhance their radiofrequency properties or to reduce the device size while maintaining their performances. For that purpose, efficient magnetic materials are required, with major magnetic properties, dielectric behavior and soft techniques of integration. Here we present a new bottom-up approach for integrating localized magnetic dielectric materials onto planar inductors. Magnetic nanoparticles are first synthesized by a liquid-phase chemical approach and then assembled into submillimeter magnets onto inductors and coplanar waveguides by a magnetophoresis-directed process, performed at atmospheric pressure and room temperature. This approach allows a conformal deposition while limiting material losses. Permittivity and permeability of Fe, FeC and FeCo particles based-materials are extracted up to 30 GHz. Optimizing the magnetic properties of the magnets through the size and chemical composition of the nanoparticles allow increasing of 40 to 60% the nominal inductance values of 2 and 13 nH up to 3 GHz. These results open new perspectives for the design of radio-frequency electronic micro-components
Ion desolvation for boosting the charge storage performance in Ti3C2 MXene electrode
No full textInternational audienceClarifying the relationship between ion desolvation, ion-electrode interactions, and charge storage capacity during ion intercalation in host electrode materials is crucial for advancing fast and efficient energy storage systems. However, the absence of direct evidence for ion desolvation and lack of detailed understanding of the interactions between surface terminations and intercalated cations (Li ions)/solvents hinder the exploration of their effects on energy storage mechanisms. In this paper, we study the intercalation of Li ions from a non-aqueous electrolyte in two-dimensional metal carbides Ti 3 C 2 MXenes with different surface chemistries: HF-Ti 3 C 2 (F-, OH- and O-terminated) and MS-Ti 3 C 2 (O- and Cl-terminated) MXenes. We are able to visualize the full ion desolvation and solvents-ions co-intercalation in the interlayers of MS-MXene and HF-MXene, respectively at the atomic scale. The combination of several techniques and characterization tools reveal that the complete ion desolvation in Cl- and O-terminated MS-Ti 3 C 2 MXenes is associated with the formation of a dense solid electrolyte interface layer, resulting in improved charge storage capacity. The O-rich surface terminations of MS-MXenes are found to be responsible for the efficient Li ions storage. These findings shed lights on identifying the critical role of non-electrostatic ion-electrode interactions and ion desolvation in designing high-performance energy storage devices
Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
No full textInternational audienceIn this work, the effect of electrical stress and high X-ray Total Ionizing Dose (TID) exposures is studied for BiCMOS 55 nm SiGe:C HBTs technology. HBTs were exposed to a maximum X-ray TID of 520 krad(SiO2) and in terms of electrical stress to a high current injection (i.e. VBE = 1.1 V in the direct gummel-plot configuration). For both stress techniques, the effect of the cumulative X-ray dose and electrical stress duration on the degradation of the base current, IB, is investigated. A linear degradation is observed after X-ray exposure. The relative base current ∆IB/IB between pre-stress and post-stress is approximately 8. For electrical stress, degradation is generally more pronounced, but increasing or decreasing erratically with the duration of the stress. To investigate a possible detrapping mechanism, a two-step annealing process was conducted at temperatures of 100 °C and 130 °C. Annealing results showed a significant difference between the two degradation processes. A recovery of 90% is measured after X-ray irradiation stress even after two cycles of high-dose X-ray irradiation, while no recovery is observed after electrical stress. TCAD simulations of X-ray irradiation effects were used to investigate and compare the experimental data regarding the impact of created trap densities and emitter-width on the degradation of DC characteristics. This enabled us to highlight the role of the EB junction, with a marked perimeter effect
Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
No full textInternational audienceIn-flight demonstration and verification of electronic devices have become a new method for evaluating radiation effects in space. This project presents the flight test data of bipolar junction transistors (BJTs) and verifies the impact of low dose rate space radiation on BJTs by measuring the current gain variation. The results obtained were comparable to the ground test results. In addition, the total accumulated dose in space was accurately measured using a PMOS dosimeter. This project achieved a precise flight verification of the Enhanced Low Dose Rate Sensitivity (ELDRS) effect on bipolar junction devices
Modeling and measurement of high frequency temperature variation on GaN transistors for inverter and rectifier applications
No full textInternational audienceThis paper shows that junction temperature in HEMT GaN dies may have temperature swing of up to 40K at 50Hz in ordinary applications. For that, precise instantaneous loss model is developed for a specific GaN transistor. Then, precise method to estimate dynamic temperature and thermal impedance of embedded GaN components is developed. Experimental measurements of thermal cycle in GaN dies with representative instantaneous loss profile is shown in order to validate the estimation model of dynamic junction temperature as well as to show that high frequency (50Hz) power cycle in GaN transistors may be a strong stressor to the device