Publication Server of Aschaffenburg University

Properties of Zerodur mirror blanks for extremely large telescopes

Author: Döhring Thorsten (Prof. Dr.)
Hartmann Peter
Jedamzik Ralf
Publication venue
Publication date: 18/02/2019
Field of study

Towards a Moneyless World?

Author: Krüger Malte (Prof. Dr.)
Publication venue
Publication date: 16/05/2019
Field of study

Internet Payment Services: PayPal - reif für den deutschen Markt?

Author: Krüger Malte (Prof. Dr.)
Hinrichs Jens-Werner
Stroborn Karsten
Publication venue
Publication date: 26/06/2019
Field of study

Herausforderungen des bestehenden Geldsystems im Zuge seiner Digitalisierung – Chancen für Innovationen?

Author: Krüger Malte (Prof. Dr.)
Godschalk Hugo
Publication venue
Publication date: 01/07/2019
Field of study

Inflation and Growth: a Discussion of Robert J. Barro's Recent Findings

Author: Krüger Malte (Prof. Dr.)
Publication venue
Publication date: 04/07/2019
Field of study

Provision of UV Irradiation for Experimental Plant Ecology

Author: Seidlitz Harald K.
Döhring Thorsten (Prof. Dr.)
Köfferlein Matthias
Payer Hans D.
Thiel Stephan
Publication venue
Publication date: 04/07/2019
Field of study

A circular polariser for the region of windowless VUV radiation

Author: Döhring Thorsten
Schönhense Gerd
Heinzmann Ulrich
Publication venue
Publication date: 10/07/2019
Field of study

Efficient DVD/R Production

Author: Stollenwerk Manfred (Prof. Dr.)
Publication venue
Publication date: 05/10/2019
Field of study

Die Plasmatechnologie und ihre Einsatzmöglichkeiten

Author: Wolters Leo
Stollenwerk Manfred (Prof. Dr.)
Berthold J.
Publication venue
Publication date: 05/10/2019
Field of study

Optical characterization of strained InGaAs/InP quantum well structures

Author: Wolter Karl
Schwedler Ralf
Gallmann B.
Jaekel Christian
Stollenwerk Manfred (Prof. Dr.)
Camassel Jean
Laurenti Jean Pierre
Publication venue
Publication date: 06/10/2019
Field of study

The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1−ϰGaχAs(lower) interface

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