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All-impurities Scavenging, Safe Separators with Functional Metal-Organic-Frameworks for High-Energy-Density Li-Ion Battery
No full textLi-ion batteries (LIBs) have wide applications owing to their high-energy density and stable cycle characteristics. Nevertheless, with the rapid expansion of electric vehicle market, issues such as explosion of LIBs and the need to secure a longer driving distance have emerged. In this work, functional metal-organic frameworks (MOFs) are introduced as a separator in LIBs, in which a highly heat-resistant polymer separator is fabricated through electrospinning. The MOFs can scavenge impurities (including gas, water, and hydrofluoric acid) that positively affect battery performance and safety. The multi-functional separator suppresses salt decomposition when a nickel-rich cathode is operated at high voltage and high temperature through it. This delays the deterioration of the cathode interface and results in a superb cycle stability with 75% retention even in the presence of 500 ppm of water in the electrolytes. In addition, the pouch cell is manufactured by enlarging the separator, and the degree of electrode swelling due to gas generation and interface degradation in the pouch state is alleviated to 50% or less. These findings highlight the necessity of scavenging impurities to maintain excellent performance and provides the development direction of functional separators in LIBs
Approaches for 3D Integration Using Plasma-Enhanced Atomic-Layer-Deposited Atomically-Ordered InGaZnO Transistors with Ultra-High Mobility
No full textAs the scale-down and power-saving of silicon-based channel materials approach the limit, oxide semiconductors are being actively researched for applications in 3D back-end-of-line integration. For these applications, it is necessary to develop stable oxide semiconductors with electrical properties similar to those of Si. Herein, a single-crystal-like indium???gallium???zinc???oxide (IGZO) layer (referred to as a pseudo-single-crystal) is synthesized using plasma-enhanced atomic layer deposition and fabricated stable IGZO transistors with an ultra-high mobility of over 100 cm2 Vs???1. To acquire high-quality atomic layer deposition-processed IGZO layers, the plasma power of the reactant is controlled as an effective processing parameter by evaluating and understanding the effect of the chemical reaction of the precursors on the behavior of the residual hydrogen, carbon, and oxygen in the as-deposited films. Based on these insights, this study found that there is a critical relationship between the optimal plasma reaction energy, superior electrical performance, and device stability
