42820 research outputs found
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Robot-Assisted Dressing Systems with Transforming Linkage Mechanisms for Enhancing Elderly Independence in Toileting
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Occurrence of bullous pemphigoid during long-term maintenance treatment for pemphigus vulgaris in remission
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Cobalt-Catalyzed Enantioselective Desymmetrization and Chemodivergent Parallel Kinetic Resolution of Unsaturated Substrates via C(sp3)–H Bond Activation
No full textIn transition-metal-mediated chemical transformations, chemoselective or chemodivergent activation of inert C–H bonds in the presence of more reactive alkene or alkyne π-bonds is a fundamental challenge. Herein, we report the Co-catalyzed cycloisomerization of unsaturated substrates bearing a 1,6-diyne moiety via enantioselective desymmetrization and parallel kinetic resolution involving the chemoselective and chemodivergent activation of a C(sp3)–H bond. The enantioselective desymmetrization of symmetrical dienediynes was demonstrated using a 1,1′-binaphthyl-based chiral phosphine ligand to afford the corresponding enantioenriched 1,3-diene products. The parallel kinetic resolution of unsymmetrical substrates such as enetriynes, dienediynes, and diynenitriles was also demonstrated, where the chemodivergent activation of a C(sp3)–H bond and an alkene, alkyne, or nitrile π-bond was achieved. The 1,3-diene products were successfully derivatized to 5–8–5 tricyclic compounds via a central-to-helical-to-central chirality transfer involving memory of chirality.journal articl
Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation
Full text linkAchieving long-duration, large bulk GaN growth is crucial to supply low-cost, high-quality GaN. Halogen-free vapor phase epitaxy (HF-VPE) is a promising method for bulk GaN growth but faces challenges due to severe polycrystals deposition on reactor components, such as the source-gas nozzles, which impedes stable, extended growth. In this study, we developed models to simulate the polycrystal deposition in HF-VPE-GaN growth conditions by including surface reactions of GaN formation and NH3 decomposition. Moreover, we devised conditions for controlling gas flow and interdiffusion to suppress polycrystal deposition around the source-gas nozzles. Experimental results aligned with simulations, showing that increasing the distance between Ga and NH3 nozzles and replacing the sheath gas from H2 to N2 effectively minimized polycrystal formation. The findings confirm that reducing NH3 concentration through catalytic surface decomposition on refractory components is crucial to polycrystal suppression. Optimizing nozzle dimensions and gas species synergistically controls the gas flow and interdiffusion. The constructed models contribute to advancing the design of polycrystal suppressive structures and conditions for long-duration bulk GaN growth.journal articl
名古屋大学における研究データの可視化・検索向上を目指したメタデータ変換と機関リポジトリへの登録について
Full text linkジャパン・オープンサイエンス・サミット2025（Japan Open Science Summit 2025、JOSS2025）(2025年6月23日～2025年6月27日、国立情報学研究所/ハイブリッド）、「F1 研究データをより見つけやすくするためのメタデータ変換と学術機関リポジトリへの登録」セッション発表資料conference outpu
