IACS Institutional Repository

Indian J Phys. 82 (2), 229-230 (2008) 
(^^OTHCOMING^ PUBLICATIONS 
Volume 82, (2008) 
Proceedings (Part II) of the National Symposium entitled Condensed Matter Days-2006 
(CMDAYS'06) organised by the Department of Physics, Tezpur University, P.O.-Nappam, 
Tezpur-784 028, Assam, India held at Tezpur, India, during August 29-31,2006 
Variational Monte Carlo study of magnetic correlations in bilayer 
t -J model 
AMAL MEDHI, SAURABH BASU AND C Y KADOLKAR 
Study of elemental composition in some 11-VI oxides by atomic 
absorption spectroscopy 
UDAYAN DE, MANISHA VENKATESH, MEHZABIN S SHAIKH 
AND B VENKATARAMANI 
Silicon oxinitride: a material for compact waveguide device 
P P SAHU 
Swift Ni12t ion irradiation effects on electrodeposited polypyrrole for 
application as electrode in supercapacitors 
A KUMAR, A M P HUSSAIN AND D K AVASTHI 
Persistent current and low-field magnetic susceptibility in n-fold 
twisted Mobius strips 
SANTANU K MAITI 
oh/vave correlations for anisotropic superconductors 
POULUMI DEY AND SAURABH BASU 
Sandpile under rotational constraint 
S B SANTRA AND D DEB 
Optical and electrical properties of thermally evaporated ZnSe thin films 
S CHALIHA, M N BORAH, P C SARMAH AND A RAHMAN 
230 Forthcoming Publications 
Optical and structural studies of SHI irradiated SiO, coated IV-VI 
semiconductor quantum dots 
S CHOWDHURY AND A CHOUDHURY 
Microscopic inhomogeneity induced thermal fluctuation in high 
temperature superconductors 
D BEHERA, R BISWAL, U K MOHAPATRA AND N C MISHRA 
Synthesis and characterizations of quality PbS quantum dots in SBR 
matrix 
N DUTTA, D MOHANTA AND A CHOUDHURY 
A plausible explanation of non-zero isotope shifts in superconductors 
B BANERJEE AND S K ROY 
Development of LDPE/TiO, composite as substrate material in microwave 
integrated circuits 
A GOGOI AND N S BHATTACHARYYA 
Electrochemical synthesis and characterization of co-polymers of 
aniline and pyrrole 
A M PHARHAD HUSSAIN AND A K KUMAR 


English

Forthcoming Publications

/ w / w w / /»/,« 82 (2), 231-234 (2008) 
X, (^< roTES FOR CONTRIBUTORS 
[MM] 
1 Publications Scheme 
Indian Join rial ol Physics is published monlhl) containing 12 icgulai issues in a\eai bom )anuai\ to 
December 
2 St ope 
Astrophysics Atmosphcnc & Space Phvsics / Atomic k. Molecular Ph\sics / Bioph\sics /C ondcnsed 
Matter & Matenals Physics /General & lnterdisuplmai) Ph\sics / Nonhncai D\namics ^ ( omple\ 
S\stems/ Nuclear Ph>sics /Optics & Spectroscopy / Particle Plnsics/ Plasm l Ph\sics/ Kclativits A. 
Cosmology / Statistical Physics 
* Rclereeing 
All contributions submitted arc rclcieed The Board ot Editors rescue the nghl to reject a manuscript 
and to edit a contribution whenever / wheicvci necessary 
4 Publication Speed 
Normally the contributions are published within six months ol the acceptance In order to kecpdclavs 
lo a minimum it is ol utter importance lor the authors to follow Preparation of Manuscripts (sec 
below ) strictly beloie submission ol the manuscript Also the revised veision (m the light ol ielerec s 
comments) oi the paper should be returned within a fortnight of the dale of receipt. Rapid 
communications arc published within S months oi the dale ot acceptance 
5 Pieparation and Submission of Manuscripts 
I he tollowings aic the requirements which should be met beloie submission ol the manuscnpts to 
Indian louinal ol Physics 
0) Manuscript 
The onginal typescupt lor a full paper should be typed on one side ot good quality bond papei with 
double spacing and a wide margin (Single Column punt area-21 cmsx 15 cms) I he title page should 
contain title author's) address(es) abstract PAOS Nos and Keywoids The main text should start on 
a new page All poges should be numbered The paper must be divided into sections stalling piclerabl) 
with intioduction and ending with Conclusions The mam sections should be numbered as 1 2 ^ itt 
and the subsections as 2 1 2 2 2*\ctc 
Rapid communication is devoted to the announcement ot timely and impoitant icsults C ontnbutions 
to this and Note sections should not exceed 8 typed pages (double spaced) including iiguies equations 
tables and references They should follow the same style and lot mat as the full paper except that they 
need not be divided into sections 
The Review Article in frontier topics must be prcpaied as per loimat of the lull paper Such article 
should have a covciage oi 25-*>0 printed pages oi the journal Three copies oi the extended abstract along 
with a plan oi the article and short bio-data of the reviewers must be sent pnoi to the communication 
oi the review article 
Manuscnpts oi the Proceeding may be submitted (aflci being reiereed and propeily edited b> the 
Convener/Guest Editor) in a Camcia-ready foimat in a CD A prior appioval bomthc Boaidol 1 ditois 
is however, required for its publication 
232 Notes for Contributors 
Net amount charged foi publication ol a Proceeding of 100 pages (or part thereof) is Rs. 20,000 00
 lmlx 
which includes fiee copies to the participants (not exceeding 100) 
Manuscript in triplicate, of which one is a clear master copy with original figures, should lH 
sent to the Assistant Registrar-! Mr. S Sahoo, Indian Journal of Physics with a mention of the field 
undei which the paper is being submitted and a list of potential referees in that area / field. 
Manuscript may also be submitted through an appropriate member of the Board of Editors. In 
that case, one copy of the manuscript is to be sent to the member concerned and two other copies 
must be submitted to the Editorial Office with an intimation. 
Final version of the Manuscript (after being accepted and edited) must be submitted in a (I) 
(containing the Text in MS WORD / La Tex, and the Figures in Post Script Files) before it is 
scheduled for publication. No article will be published without CI). 
(ii) Title 
The title should be bnel and yel convc) to the infoimcd icadet, the particulai nature ol the contents of 
the papei 
(iii) Address 
The namc(s) ol the authoi(s) and addrcss(es) ot the institute where the research work was done, should 
be indicated The name ol the author to whom conespondence is to be addiessed, should be underlined 
The piesenl address(es) ol the author(s), if it is diflercnl, may be given as a foot note E-mail addiess ot 
the corresponding author must be provided 
(iv) Abstract 
An abstract ol less than 200 words is required It should contain the essence of the result achieved 
(v) Keywords and PACS numbers 
Appropriate Keywords and PACS Nos. (Physics and Astronomy Classification Scheme of Anient an 
Institute of Physics) (not more than six) must be provided for indexing and information ictrieval services 
PACS is available online (htlpV/wwvv aip org/pacs/) 
(vi) Text 
In the prepaiation ol text, the authors should pay attention lo the language (usage of words, grammai and 
construction of sentences), logical presentation, enumeration ol assumption made, justifications ol 
appioximations made etc and all the limitations must be stated whcncvci and wherever neccssaiv 
Moreover, a paper must be self-contained, its presentation being clear, concise and satislactory 
(vii) Figures 
The numbei ol figuies should be kept to the minimum Each figure must be icfcrred to in the text, be 
numbeicd and have a caption The captions should be typed on a separate sheet The appropriate place 
of the figure should be indicated in the margin of the text Axes of figures must be labelled properly The 
letterings as well as the essential details be inserted in all the submitted copies Waste space at the top 
and bottom should be avoided After acceptance, electronic files for the figure (Post Script Files) ate to 
be submitted in a CD 
(viii) Tables 
Tables should be typed on separate sheets and each table should have a number and a self-ex planaton 
title Column headings of tables should be brief Footnotes to the tables, if any, should be identified b> 
superscript letters and placed at the bottom of the table When papers include extensive tabular material 
or appendices, which may be of interest to relatively few readers, the material should be deposited with 
the Editorial Office. 
Notes for Contributors 233 
J1X) Formulae 
Displayed formula should be numbered , typed or written by hand clearly and unambiguously Vectois, 
special symbols, superscript and subscripts etc should be identified with propci signs in the manuscript 
Long equations should be avioded as much as possible, by intmduchon of suitable abbreviations of 
component expressions The 'exp' form of complex exponential functions [Exp (-&r) instead of «r"*r|. 
fractional exponents instead of root signs \xVl instead of Vx] and solidus (/) foi fiactions \a/b instead 
of j J are preferable International conventions in the choice ol symbols, units and notation should be 
followed 
iv) References 
All icfeicnces referred to text, tables and figures of a manusenpt musi be combined in a single list, 
numbcied consecutively in their order of first appearance and ananged in the same ordci at the end of the 
text material They should be cited in text by Arabic numerals in square biackcts at appiopnalc places 
of a sentence, for example [ I -5] etc The icfcrcnces cited should be limited to the absolute minimum and 
the list to be submitted in a separate sheet containing names of all authois (kt t al is not allowed) I he) 
should be as complete as possible and be piesented as follows 
[i | I' Kmo and A R P Rao Atomic Collisions and Spectra (New "iork Academic) Vol 1, Ch 2 Sei 4 p 25 
(1086) 
PI T Atsumi, F Isihara, M Koyama and M Malsu/awa Pins Rc\ A42 6391 (1990) 
|! 11 rI Le-Brun M Lavollee and P Monn X ray and Inner Shell Processes (AIP Con! PKX 215) eds T A 
Canson. M O Krause and S Manson (New York AIP) p 846 (1990) 
1141 SB Hansen K B Mac Adam and I G Giay 12th hit Conf on Atomic Physic s (Ann Aiboi) Abstiat ts p\-
12(1990) 
! S| H Paulv Atomic and Molec itlcu Beams Mc thods eds G Scolcs D Bassi 11 Buck and D Lame (London 
Oxlord University Press) p 83 (1988) 
i 19| W hntsch (private communication) (1988) 
|211 KB MacAdam (to be published) (1091) 
|2*| rl Roy PhD Uresis (University of Calcutta, India) (1992) 
(\i) Footnotes 
As lai as possible, footnotes should be avoided 
(\n) Appendices 
All appendices should be numbcied consecutively and typed on separate sheet 
Manuscripts which do not conform to these conventions are returned to the authors immediately. 
6. Reprints 
A reprint order form sent to the corresponding author must be leturncd to the Staff Editor (Technical 
Officer-I) Mr A N Ghatak, Indian Journal oj Physic s, Indian Assoc tationfor the ( nltn at ion of S< tern t 
Jadavpur, Kolkata-700 0 ?2, India within two days from the date of receipt. There is no pa^c chaige A 
Complimentary copy of the Journal and 10 (ten) copies of the reprints will he sent to the 
Corresponding Author, free of charge. However, extia copies of reprints (with/without cover) may be 
ordered with remittance in advance (along with reprint order and signed copynght Form) at the following 
revised rates (from January 2000 onwaids) 
Page Foicign US $ 20 00 pei page per 50 copies oi pait thereol 
Inland Rs 150 00 per page per 50 copies oi part thereof 
Cover Foreign US $ 30 00 per cover of 50 copies oi part theieot 
Inland Rs 250 00 per cover of 50 copies or pait thereof 
Art Plate Foreign US $ 30 00 per page/colour of 50 copies oi pait theieof 
Inland Rs 250 00 per page/coloui of 50 copies or part thereof 
If the reprint order is not received in time, later request for any more reprints cannot he 
complied with. 
234 Notes for Contributors 
7. Corrections and Modifications 
Authors are requested to exercise utmost care in preparation of manuscripts so that there is little ncid K 
incorporate alterations at the Final stage Extensive modifications at this stage are not allowed 
8. Correspondence 
All correspondences icgarding the manuscripts should be sent to the Assistant Registrar-!, Indian Jauma 
of rfnstcs, Indian Assentation for the Cult nation oj Science, Jadavpur, Kolkata-700 012. Indui 
(e-mail ssahoo_ijpyahoo t om) with full rcleience to the paper concerned / e the name(s) of authors, 
the lull title and the relerence number (given by the bditonal Otlice) 
C>¥L IMPORTANT I N S T R U C T I O N S TO THE C O N T R I B U T O R S 
The authors are lequested to include the following important Information in their Covet mg Letters wink 
submitting the papeis to Indian Journal of Physics 
(i) The mailing address of the Corresponding Author with F-mail, Fax and Flume Nos 
(u) A list of Fotential Refer ees u tth postal and e-mail addresses, for the submitted Manusi r tpt 
(m) The specific Field under \\ huh the Manuscript is to he plac ed 
(i\) Whether the Manusc i ipt should he published as (a) Review ,{b) Full paper (c) Shot t note, 
(d) Rapid communu atum 
(v) Ju stipe at ion if the Manu sc ript is to be publi shed a s a Rapid ( ornmunu at ion 
G £E I N S C R I P T I O N S 
Periodicity 12 issues per year (January-December) 
Foreign Annual Single 
US $ S00 00 US $ 50 00 
(including air freight) (including air freight) 
Inland Rs 1,500 00 (including postage) Rs 150 00 (including postage) 
Discount 2VA (Agenls/Book-Scllers) 
50'# (Research Scientists & Students for direct subscription) 
Rs 500 00 (Annual subscription for I ACS and IPS members only if subscription 
be received within December of the preceding year ) 
Demand Draft (D/D) to be drawn on any Bank at Kolkata Branch in favour of 'Indian Association for the 
Cultivation of Science ". and this along with other relevant enquiries should be sent to the Assistant Registrar-
/ , Indian Journal of Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700 OU 
India Out-station cheque may be accepted with an additional amount of Rs. 75-00, in addition to subscription 
rates of Rs 1,500-00 Journal will be supplied against advance payment only. 
Phone : (+91) (33) 2473-4971 (Extensions 160,161,162,452) 
Gram : Indasson, Jadavpur 
Fax : (+9I)(33)2473 2805 
e-mail : ijp@iacs res in 
Web : http //www lacs res m/ijp html

Notes for Contributors

Indian J Phys. 82 (2), 235-236 (2008) 
iir Special Publications 
•Commemorative Volumes to mark the celebration of 75th yeai 
of publication of Indian Journal of Physics : Volumes 1-6 
1. Frontiers in Materials Physics 
Guest Editor: D Chakravorty 
Price : Rs. 600.00(10 articles, 247 pages, illustrated) 
Date of Publication : 2002 
2. Frontiers in Astrophysics 
Guest Editor: Sandip K Chakrabarti 
Price : Rs. 600.00 (12 articles, 303 pages, illustrated) 
Date of Publication : 2002 
3. Frontiers in Atomic, Molecular & Optical Physics 
Guest Editors : S S Bhattacharyya and S C Mukherjee 
Price : Rs. 600.00 (15 articles, 429 pages, illustrated) 
DateofPubhcation-2003 
4. Frontiers in High Energy Physics 
Guest Editors : Amitava Raychaudhuri and Pariha Mitra 
Price • Rs. 600.00 (11 articles, 281 pages, illustrated) 
Date of Publication : 2004 
5. Frontiers in Condensed Matter Physics 
Guesl Editors : J K Bhattacharjee and B K Chakrabarti 
Price : Rs. 600.00 (7 articles, 308 pages, illustrated) 
Date of Publication : 2005 
6. Frontiers in Biophysics 
Guest Editors : T P Singh and Chanchal Das Gupta 
Price : Rs. 600.00 (12 articles, 188 pages, illustrated) 
DateofPubhcation:2005 
* For Volumes 1-6. please contact Publishers 
Messrs. Allied Publishers Pvt. Ltd. 
A 104, Mayapun, Phase-ll, New Delhi! 10 064, India 
•7, Chittaranjan Avenue, Kolkata-700 072, India 
1*. J N Heredia Marg, Ballard Estate. Mumbai-400 038, India 
75 lt Anna Salai, Chennai-600 002, India 
236 Our Special Publications 
II. Landmark Papers in Indian Journal of 
Physics 11926- 200 J1 
Guest Editors : J K Bhattacharjec and 
DSRay 
Price : Rs. 500.00; US $ 50.00 (289 pages, 
illustrated) 
Date of Publication : December, 2002 
III. 75th Year of Discovery of Raman Effect: A 
Special Issue of Indian Journal of Physics 
(1928-20031 
Guest Editor : S Chakravorti 
Price : Rs 500.00, US $ 50.00 (164 pages, 
illustrated) 
Date of Publication • February, 2003 
IV Production of Radioactive Ion Beams 
|PRORIB-2001| 
Proceedings of the DAE-BRNS sponsored 
International Workshop - A Special Issue 
of Indian Journal of Physics 
Guest Editor : Alok Chakrabarli 
Price : Rs. 200.00; US $ 50.00 (226 pages, 
illustrated) 
Date of Publication : May, 2002 
V Commemoration Volume on Professor K S 
Knshnan 
BirthCentenary I1898-1998] 
Guest Editors : S Ray and C K Majumdar 
Price : Rs. 100.00; US $. 40.00 (332 pages, 
illustrated) 
Date of Publication : December, 1999 
VI. Physics and Technology of Accelerators : 
A Special Issue of Indian Journal of Physics 
on the occasion of Golden Jubilee of India's 
Independence 
Guest Editor : Debashis Basu 
Price : Rs. 100.00; US $. 40.00 (236 pages, 
illustrated) 
Date of Publication : December, 1999 
VII. Recent Trends in Statistical Physics : A 
Special Issue of Indian Journal of Physics 
Guest Editor : J K Bhattacharjee 
Price : Rs. 100.00; US $. 40.00 (140 pages, 
illustrated) 
Date of Publication : August, 1998 
VIII. XI DAE Symposium of High Energy 
Physics : A Special 
Issue of Indian Journal of Physics 
Guest Editor: Ranabir Dutt and Asim K Ra\ 
Price : Rs. 300.00 ; US $. 100.00 (395 pages 
illustrated) 
Date of Publication : February, 1997 
IX. Lectures of Theoretical Physics Seminai 
Circuit [1990-921: A Special Issue of Indian 
Journal of Physics 
Guest Editors : C K Majumdar and Partha 
Ghosh 
Price * Rs. 80.00; US $. 35.00 (100 pages. 
illustrated) 
Date of Publication : November, 1993 
X. Commemoration Volume on Prolessoi 
Meghnad Saha : Birth Centenary |1X()} 
1993] 
Editors : H Bancr|ce and S P Sen Gupta 
Price Rs. 140.00; US $ 40.00 (240 pages 
illustrated) 
Date of Publication : December, 1993 
XI. High Temperature Superconductivity 
Lectures ol Theoretical Physics Semmai 
Circuit (1989-90): A Special Issue of Indian 
Journal of Physics 
Editors : B K Chaudhun and S P Sen Gupta 
Price : Rs. 80.00; US $. 30.00 (220 pages. 
illustrated) 
Date of Publication : March, 1992 
XII. Commemoration Volume on Professor C \ 
Raman: BirthCentenary (1888-1988] 
Editor :SPSen Gupta 
Price : Rs. 50.00; US $. 25.00 (225 pages, 
illustrated) 
Date of Publication: July, 1989 
contact us for all these Special Publications 


Our Special Publications

Kumar, A

Hussain, A M P

Avasthi, D K

Swift Ni2+ Ion Irradiation Effects on Electrodeposited Polypyrrole for Application as Electrode in Supercapacitors

Gogoi, A

Bhattacharyya, N S

Development of LDPE/TiO2 Composite as Substrate Material in Microwave Integrated Circuits

From Editor's Desk

Advisory Board and Editors

Devi, T H Gomti

Kumar, K

Indian J. Phys. 82 (5), 571 -575 (2008) 
Solvent dependent Raman anisotropic bandwidth study in 
carbonyl containing molecule: Role of van der Waals' 
volume in intermolecular interactions 
Th Gomti Devia* and K Kumarb 
0
 North-Eastern Regional Institute of Science and Technology (NERIST), 
Nirjuli-791 109, Arunachal Pradesh, India 
• North-Eastern Hill University (NEHU), Shillong-793 022, Meghalaya, India 
E-mail devigomtiCf/'yahoo co in 
Abstract * The bandwidths of the anisotropic Raman component (l\niso) ° ' E tnv ' Acetate (EA) were 
measured for different solvent concentrations ( 0 ) ranging from 10% to 90% using CH3CN, CHCI, and C6H6 
solvents and were plotted as a function of solvent concentrations. The data points are scattered and cannot be 
fitted into a particular curve. The data on anisotropic bandwidth are interpreted using the van der Waals' 
volume(VJ within the framework of lineshape theory of Bratos and Tarjus The ratio (rarvso/Vw) has been 
estimated and plotted as a function of 0 This graph is an exponential curve in all the three solvents which 
shows that repulsive type of interaction forces e "R are responsible in the line broadening mechanism 
Keywords . Vibrational relaxation, Raman bandshape, anisotropic bandwidth, van der Waals' volume 
PACS Nos. 33.20Fbt 34.30 +h 
1. Introduction 
The intermolecular forces on molecular vibrations play a great role in the studies of dynamic 
processes and vibrational relaxation in molecular liquids[1-5]. The solvent-induced 
perturbations are reflected in the frequency and bandwidths of the vibrational bands of the 
solute molecule [1-4]. The van der Waals' volume has been taken into account to explain 
the intermolecular interactions based on the Bratus and Tarjus theory [6-9]. The C=0 
containing Ethyl Acetate(EA) molecule has been studied using CH3CN, CHCI3 and C6H6 
solvents at different solvent concentration. Ethyl acetate is a compound having biological 
and chemical applications in industries and in research lab because of its unique 
characteristics. 
Corresponding Author 
©2008IACS 
572 7/7 Gomti Devi and K Kumar 
2. Experimental 
Raman spectra were recorded for C=0 stretching band of EA using CH3CN, CHCI and 
C6H6 solvents at various concentrations ranging from 10% to 90% using a Spex Ramalog 
1403 double monochromator, a photon counting arrangement and a DM-3000 software 
The 488 nm line from Spectra Physics model 165 Ar ion laser was used as excitation 
source. Laser power was maintained at about 300mW and slitwidth was kept at 2cm' 
The effect of finite slitwidth was corrected [10] by using the equation 
= ra\^~{s/ra) where rt and Ia are the true and 
(FWHM) respectively, and S is the spectral slitwidth in cm'1. 
rt = ra r  rt  Ia r  t  tr   apparent Raman linewidth 
3. Results and discussion 
The bandwidths of the anisotropic Raman band (raniso) of EA were measured at different 
solvent concentrations ranging from 10% to 90% using polar and non-polar solvents 
(CH3CN, CHCI3 and C6H6) of varying dielectric constant. Figure 1 shows the spectrum of 
neat EA. The anisotropic bandwidths of EA in 3 solvents were measured at different 
solvent concentration. Figure 2 shows the variation of anisotropic bandwidth with solvent 
concentration. The data points are scattered and cannot be fitted into a particular curve 
The data points show different patterns for each solvent at different solvent concentration 
however the data points are found to decrease at higher solvent concentration. The non-
linearity of raniso showing in these plots from lower to higher solvent concentration may 
be due to the structural characteristics and the interacting nature of the substituents m 
the molecules. Investigations by D. Levesque, et al [11] as well as G. Tarjus and S 
Bratos [6-9] show that for chemical solutions, the half width of isotropic and anisotropic 
100 , Ethyl Acetate (neat) 
80 
60 
40 
20 
1680 1700 1720 1740 1760 
Wavenumber/(Cm ]) 
Figure 1. Raman spectrum of Neat Ethyl Acetate. 
1780 1800 
Solvent dependent Raman anisotropic bandwidth study in carbonyl etc 573 
Raman bands is concentration dependent and this dependence is complex, even in the 
slow and fast modulation limits. This is due to the fluctuation of the chemical composition 
m a given site of the liquid and to the structure breaking effects[12-18]. 
19.0 
185-| 
180 
aniso 
175-1 
170 
165 
EA: ACN 
* * 
0.0 0.2 0.4 0.6 0.8 
Solvent concn(VAZ) 
21 T 
20-
19-^  
r 18^ 
aniso 
17-1 
16-1 
15 
26 5-
26 0-
25.5-
ISO 
25.0-
24 5-
24.0-
23.5-
* 
* 
—-i 
* 
* 
* 
. 
* 
EA: CLF 
* 
* * 
— , — > ' • • » — > 
1.0 
14 
0.0 0.2 0 4 0.6 0 8 
Solvent Concn(V/V) 
E A : B N 
1 0 
0.0 10 0.2 0 4 0.6 0.8 
Solvent Concn(V/V) 
Figure 2. Variation of solvent concentration with the anisotropic bandwidth 
The interaction energy due to solute-solvent interaction may arise due to the contribution 
from one or more coupling terms, such as dipole-dipole, dipole-quadrupole and quadrupole-
quadrupole, dipole-induced dipole etc. [1,3-4]. In order to have a more clear picture about 
the intermolecular interactions involved we have taken into account the van der Waals' 
volume of the sphere of influence in a solute dissolved in different solvents. The calculation 
of van der Waals* volume assumes knowledge of bond distance; inter molecular van der 
Waals' radii [19] and shapes of atoms in various molecular configurations. The van der 
Waals' volume of the interacting system was calculated by using the equation 
Vw = 0 Vw(solute) + (1 - * ) VJsolvent) 
keeping in view the varying nature of the solute-solvent distance in a liquid, where 0 is 
the concentration of the solute. The calculations for the van der Waals* volume of the 
574 Th Gomti Devi and K Kumar 
solute and solvent were done keeping in view of the fragments of the molecules, which 
may have closest approach. The main interaction is considered between the dipole, which 
is the C = O of the solute and the solvents which are of dipole, quadrupole and octupole 
in nature. For solute-CH3CN system, the main interaction is likely between the dipole 
moment of C = O bond of the solute and the dipole moment of the solvent. When EA is 
dissolved in CH3CN, the dipole-dipole interaction of the solute-solvent system will affect 
the pair interaction. The dipole of CH3CN molecule will try to interact with the dipole of 
the solute and align along the electric field of the solute dipole. In this case, the closest 
approach is determined by the orientation of the C - C = N fragment of the solvent 
molecule. However, the liquid nature of the system will maintain the smooth flow because 
the hydrodynamic forces may be dominant over the electrical forces. The cylindrical shape 
of the CH3CN molecule may not hinder the smooth flow of the molecules; hence, the van 
der Waals' volume for the solvent has been taken for the entire molecule, which is the 
sum of van der Waals' volume of the C - C s N fragment and the van der Waals' volume 
of CH3 group[19]. For solute EA-benzene compound, the main interaction is between the 
quadrupole moment of solvent benzene and the C = O of the solute. Similarly, for the 
EA C ^ 
0.2 0.4 0.6 0.8 1 0 
Solvent concn(WV) 
EA BN 
Solvent Concn(WV) 
Figure 3. Variation of solvent concentration with the P. 
Solvent dependent Raman anisotropic bandwidth study in carbonyl etc 575 
interaction between EA - CHCI3, the mam interaction is taken between C = O and the 
entire solvent molecular structure as the hydrodynamic properties of the liquids have to 
be taken into account [1,3].Table 1 shows the calculated values of van der Waals' volume 
of solute and solvents using the data from Bondi [19] 
Table 1 Van der Waals' volume of solute and solvent molecules 
Molecules C = 0 CH3CN CHCI, CbHh 
(Solute) (Solvent) (Solvent) (Solvent) 
cm3/mol cm'Vmole cm3/mole cmVmole 
Van der Waals' volume 11 7 59 44 55 93 48 4 
The values of P = (raniS0/Vw) have been determined for each solvent and plotted as a 
function of solvent concentration (Figure 3) This graph is an exponential curve in all the 
solvents This indicates that the repulsive type potential exp (-a/?) may be playing a 
significant role 
4. Conclusion 
The Raman anisotropic bandwidths are interpreted using the van der Waals1 volume (VJ 
within the framework of lineshape theory of Bratos and Tarjus The van der Waals' volumes 
of molecular fragments of closest approach have been taken into account so as to explain 
the intermolecular interaction in liquids It has been found that repulsive type of intermolecular 
interaction is responsible for the solute-solvent systems 
References 
(1J Th Gomti Devi A Das and K Kumar Spectrochtm Acta A60 211 (2004) 
[2] Th Gomti Devi and K Kumar J Raman Spectrosc 35 835 (2004) 
[3] A Das and K Kumar J Raman Spectrosc 30 547 (1999) 
14) A Das and K Kumar Spectrochtm Acta A54 793 (1998) 
[5] M Musso, H Torn, M G Giorgini and G Doge J Chem Phys 110 10076 (1999) 
[6] S Bratos and G Tarjus Phys Rev A24 1591 (1981) 
[7] S Bratos and G Tarjus Phys Rev A32 2431 (1985) 
[8] S Bratos and G Tarjus Can J Chem 63 2047 (1985) 
[9) G Tarjus and S Bratos Phys Rev A34 4202 (1986) 
[10] K Tanabe Spectrochim Acta A40 437 (1984) 
[11] D Levesque, J J We is and D W Oxtoby J Chem Phys 79 917 (1983) 
[12] W Schindler, T W Zerda and J Jonas J Chem Phys 79 639 (1983) 
[13] G Fmi and P Mirone Spectrochim Acta A32 625 ( 1976) 
[14] P Mirone and G Fmi J Chem Phys 71 2241 (1979) 
[15] D W Oxtoby J Phys Chem 87 3028 (1983) 
[16] G Doge, R Arndt and J Yarwood Mo/ Phys 52 399 (1984) 
[17] C H W a n g and J McHale J Chem Phys 72 4039 (1980) 
[18] D W Oxtoby Annu Rev Phys Chem 32 77 (1981) 
[19] A Bondi J Phys Chem 68 441 (1964) 


Solvent Dependent Raman Anisotropic Bandwidth Study in Carbonyl Containing Molecule : Role of Van Der Waals' Volume in Intermolecular Interactions

Bhadra, J

Sarkar, D

Indian J. Phys. 82 (6), 795-799 (2008) 
Field effect transistor from dispersion polymerized aniline 
J Bhadra and D Sarkar* 
Department of Physics, Gauhati University, 
Guwahati-781 014, Assam, India 
E-mail • sarkardeepaIiC«rediffmaiI com 
Abstract : We report here the fabrication of all polymer Polyaniline-Polyvinyl alcohol (PANI-PVA) FET and 
observation of FET characteristics. The FET is made in four different substrates, viz, Si, glass, PVA and 
transparent sheet. The l-V characteristics of these all polymers FET's, show clear FET behaviour for a p-channel 
semiconductor. The films are characterized by SEM and X-ray diffraction for morphology and structure study 
The characteristics results give clear indication of formation of nanometer sized polyaniline spheres in PVA 
matrix. 
Keywords : Conducting polymer, Polyaniline composite, Nanoparticles, Logic circuits 
PACS Nos. : 61.46.Df., 72.80.Le 
1. Introduction 
Tremendous amount of research has been carried out in the field of conducting polymer 
since 1977 when the conjugated polymer polyacetylene was discovered to conduct 
electricity through halogen doping [1-3]. The 2000 Nobel Prize in Chemistry recognized 
the discovery of conducting polymers and over 25 years of progress in this field [4, 5]. 
Among conducting polymers, polyaniline is of particular interest due to its excellent air 
stability, low cost, ease of polymerization etc, making it a potential candidate for many 
advanced technological applications [6, 7]. The intriguing optical and electronic properties 
of 7i-conjugate backbone conducting polymers have captivated much interest in the scientific 
community. There are numerous works on PANI nanocomposites with inorganic hybrids, 
polymer emulsion or polymer in micellar medium [9, 10]. One of the key problem related 
to the potential application of polyaniline is its difficulty in processibility; either from melt 
or from solution. With a rigid rc-conjugated backbone, polyaniline decomposes without 
melting when heated, also it is not soluble in common solvents. Processability in PANI 
' Corresponding Author 
©2008IACS 
796 J Bhadra and D Sarkar 
can be achieved in number of ways viz, using functionahzed monomer, co-polymerization 
with other polymer and by polymerizing in some synthetic high polymer matrix using 
dispersion polymerization method This kind of PANI dispersion can be used as transparent 
coating for EMI shielding, anti corrosion protection for metals etc PANI nano is believed 
to be superior to its bulk counterpart [8] in many of these applications Another noble 
application of this type of rc-conjugated polymers is in the fabrication of field effect transistor 
(FET) Study of conducting polymer nano FET's is an emerging area of research [11-14] 
This type of Ti-conjugate polymers have another application as it forms one of the most 
fundamental components of electronic circuitry and the basic building blocks of logic 
circuits and switches for display also conducting polymer FET's are being used as efficient 
gas sensor 
In this paper, we report the electrical conductivity of PANI-PVA film in FET configuration 
on different substrates PANI is synthesized in PVA matrix taking aniline to PVA monomer 
ratio as 1 9 The nano dispersion is very stable particularly for this ratio, and stays for 
more than fifteen days without any precipitation These films are also characterized by 
SEM and XRD to assign particle size and shape 
2. Experimental details 
All the chemicals and reagents used are obtained from Emerck and Sigma chemical 
company and are of very high purity 99 99% However, aniline is purified by repeated 
distillation under vacuum prior to use Dispersion polymerization of aniline is carried out 
by usual technique in aqueous solution with HCI in PVA using ammonium persulphate as 
oxidant Immediately after the solution turn bluish green homogenously the reaction was 
stopped and films are spin cast on different substrates and dried The dried films are 
again washed with deionized water to remove any unreacted reagent and dried again 
Source and drain contacts (at distance ~ 0 2mm) are made on top surface of film and 
gate contact is taken from the bottom 
The l-V characteristics are measured by Keithley CV meter (model 595) and a Hewlett 
Packard multimeter (E2373A), XRD data by Seifert XRD 3000 pdiffractrometer with Cu-Ka 
radiation (0 15418nm) and FESEM images are recorded by JSM-6700F, JEOL, Japan 
3. Results and discussion 
Figure 1 shows field emission scanning electron microscope image of PANI-PVA film The 
image shows spherical particles of nanometer dimension with average particle diameter of 
20nm. The picture also shows that nanoparticles are nicely oriented along particular 
direction. This is achieved because high concentration of PVA molecules (capping) hinders 
aggregate formation and inhomogeneity 
Figure 2 shows the X-ray diffraction spectrum for PANI-PVA film. It shows peaks at 
20 values of 11.72°, 19.54°, 26.23° and 29 15° and an extra sharp peak at 20 value of 
Field effect transistor from dispersion polymerized aniline 797 
3 5 . 3 ° , which indicate more crystallmity in the film similar to as that has been found by 
Kim et a / [ 1 0 ] . T h e s e peaks correspond to (011), (101), (200) and (022) planes respectively. 
Figure 1. SEM picture for PANI-PVA film. 
Among these peaks, the one at 20 , 19.54° is the characteristics amorphous peaks of 
PANI [15]. 
4200
 T $3700 
S32CCH / V N 
, 2200 f 
1700 """"N^ ii 
1200 
700 
10 M> 20 25 30 36 40 41 
20 (degree) 
Figure 2. Diffraction spectra for the PANI-PVA film 
Figure 3 shows the output characteristics of the F E T device for different gate voltages 
(VG) in volt. T h e drain current (lDS) vs drain voltage (VDS) curves show the behaviour 
expected from a p-channel FET, being initially linear with t / D S a n d saturation at higher VDS 
as observed by Liu et al [13] . However the saturation region is not quite at tained in the 
F E T s fabricated on glass slide. Also lDS decreases with increasing VG This further confirms 
that the device operates as a F E T and that the majority carriers are holes as expected 
for doped polyanilines [12, 17, 18]. T h e characteristics on different substrates show different 
saturation range of drain current. Of different substrates used transparent sheet , PVA a n d 
p-doped Si wafer ( some extend) show a good saturation region. Possible reason for that 
m a y be larger thickness of glass a n d silicon wafers . This increases source gate gap 
which hampers F E T functioning. 
798 J Bhadra and D Sarkar 
12 
1 -{ 
08 
JQ 
0< | -J 
02 
0 T i r • T - 1 r I » T ' i i i i > 
0 02 P4 06 OS t 12 M 10 18 2 11 24 24 28 
VDS (volt) 
(a) 
< 
c 
• • « 
0004 • 
t J N ; ! j 5 « i ! 
4 6 8 
VDS (volt) 
(C) 
0 08 
006 A 
002 1 
• • : • 
, • • • • 
• • 
• • 
• • • • • , 
• • V A * ! * * * * * 4 * 4 * 1 * " 
• A A A 7 » « * * * * 
*
f
' ' ^ «* 
* * * 
02 04 00 OB 
VDS (volt) 
(b) 
(106
 n 
0 04 
< 
c J0 02 A 
12 
Figure 3 FET characteristic of PANI PVA on (a) PVA, (b) glass slide, (c) p- doped silicon and (d) 
transparent sheet film at gate voltages of -8 ( + ) -4 ( • ) , 0 (Q) 4 ( j^ ) , 8 ( x ) 
4. Conclusions 
Highly oriented nanospheres of PANI are obtained by dispersion polymers in PVA matrix 
The films show very good p-channel FET characteristics on transparent sheet and PVA 
substrate and moderate on p-doped Si wafers These further confirm the fact that polyanilines 
are p-type semiconductors and have potential for use in electronic circuits and sensors 
References 
[1] H Shirakawa, E J Louis, A G MacDiarmid, C K Chiang and A S J Heeger Chem Commun 578 
(1977) 
[2] T J Skotheim, R L Elsen boumer and J R Reynolds Handbook of Conducting Polymers (2nd ed) 
p1097 (New York Marcel Dekker) (1998) 
[3] P Chandrasekhar Conducting Polymer, Fundamentals and Applications A Practical Approach 
p760 (Boston Kluwer Academic) (1999) 
[4] A G MacDiarmid Angew Chem, Int Ed 40 2581 (2001) 
[5] N Hall Chem Commun 1 (2003) 
[6] N J Pinto, A T Johnson, A G MacDiarmid, C H Mueller, N Theofylaktos, D C Robinson and F A 
Miranda Appl Phys Lett 83 4224 (2003) 
[7] N D Sankir, J B Mecham, R M Goff, W L Harrison and R O Claus Smart Mater Struct 15 200 
(2006) 
Field effect transistor from dispersion polymerized aniline 799 
[8) M G Han, S K Cho, S G Oh and S S Im Synth Met 126 53 (2002) 
[9] S J Su and N Kuramoto Synth. Met 114 147 (2000) 
[10] B J Kim, S G Oh, M G Han and S S Im Langmuir 16 5841 (2000) 
(11] J Paloheimo, P Kuivalainen, H Stubb, E Vuonmaa and Yli-Lahti AppI Phys Lett. 56 12 (1990) 
[12] N J Pinto, A T Johnson, Jr., G MacDiarmid, C H Mueller, N Theofylaktos, C Robinson and F A 
Miranda AppI. Phys. Lett. 83 20 (2003) 
[13] Haiqing Liu, Christian H Reccius and H G Craighead AppI Phys Lett. 87 253106 (2005) 
[14] A Rosa Vera, B Hugo Romero and A Eduardo J CM Chem Soc 48 (2003) 
[15] M E Jozefewicz, R Laversanne, H H S Javadi and A J Epstein Phys Rev B39 17 (1989) 
[16] S M Sze Physics of Semiconductor Devices (New York Wiley) (1981) 
[17] C T Kuo and W H Chiou Synth. Met 88 23 (1997)

Field Effect Transistor from Dispersion Polymerized Aniline

Barman, Jayanta

Sarma, K C

Indian I Phys. 82(7) 855-862(2008) 
Structural and optical properties of CdS nanoparticles 
Jayanta Barman and K C Sarma* 
Department of Instmmentation & USIC, Gauhati University, Guwahati-781 014, Assam, India 
E-mail: kanak_sarma50@rediffmail.com 
Received 16 August 2007, accepted 4 February 2008 
Abstract : 11-VI semiconductor nanoparticles have attracted a lot of attention due to the possibility of their 
applications in various devices. Among the materials used for fabrication of quantum dots (Q0) and nanccrystals, 
cadmium sulphide (CdS) has drawn wide attention because of its potential for applications and availability of a 
variety of methods for its preparation. In the present study, chemical method has been used for synthesis of CdS 
nanoparticles in polyvinyl alcohol (PVA) as a matrix. X-Ray diffraction and electron microscopy (JEM) were used 
to determine the phase, shape and size of quantum dots. UV-VIS spectrophotometer and PL-study shows the 
blue shift and defect level formation within the band gap. Particle size was found to be between 4 and 7 nm. 
Keyword : CdS quantum dot, bandgap, nanocrystallites. 
PACS Nos.: 73.63.Kv, 68.37.Lp, 68.37.H 
1. Introduction 
Nanostructured materials, especially ll-VI semiconductors have become a subject of 
intensive research for their extraordinary properties compared to their bulk counterpart 
[1—5]. The properties of semiconductor nanoparticles depend mainly on their shape 
and size due to high surface to volume ratio [6,7]. The structural and optical properties 
of CdS are of increasing interest due to the size dependent optical properties in the 
regime where the nanocrystal is smaller than bulk exciton radius. Blue shift of optical 
absorption spectrum, size dependent luminescence are some examples of the interesting 
properties exhibited by the nanoparticles [8-12]. All these properties are various 
manifestations of the so called quantum size effect which arises due to the increasing 
quantum confinement of the electrons and holes. However, when the dimensions of 
the crystalKtes become comparable to or less than the Bohr radius of exciton wave 
function, there is a significant change in properties. In CdS such quantum size effect 
is observed for crystallites below 5 nm diameter [13-15]. 
^ra 
'Corresponding Author © 2008 IACS 
856 Jayanta Barman and K C Sarma 
Nanometer-scale electronics has opened new areas of application in device 
technology. One-dimensional nanoscale materials may be utilized in various nanodevices 
including nanologic circuits [16], nanolasers [17], nanosensors [18], nanothermometers 
[19], etc. Quantum dot of semiconductors and metallic alloys have been found to 
exhibit interesting optical properties. Several techniques such as thermal evaporation 
[20], sol gel process [21], metal-organic vapor phase epitaxy [22], wet chemistry 
deposition [23], spray pyrolysis [24], and chemical bath deposition (CBD) [25] have 
been used to produce CdS nanoparticles. Among them, chemical deposition is well 
known as a prevalent low-temperature technique for depositing large area of 
semiconductor nanoparticles, the simplest and the most economical one. A solution 
growth technique (SGT) is a relatively inexpensive and convenient technique for large 
area preparation of semiconductor nanoparticles at low temperature. The physical 
properties of the film are reproducible by this method. The growth process involves 
the application of a controllable chemical reaction which proceeds at a low rate in an 
aqueous solution containing the various reactants. The reaction rate in this technique 
is controlled by adjustment of pH, temperature, and the relative concentrations of the 
various reactants in the solution. 
CdS nanoparticles are attractive candidate for optoelectronic applications, as the 
band gap of the semiconductors can be tuned to suit to any specific application. Bulk 
CdS has a hexagonal wurtize type crystal structure with lattice constant a = 0.4160 
nm and c = 0.6756 nm. The single cubic phase has been observed in synthesised 
nanoparticles. In the present work, we report the chemical deposition of CdS nanoparticles 
and their characterization by XRD, TEM, SEM. UV-VIS spectro-photometry and PL 
spectrometry. The effect of pH on structural, morphological and optical properties of 
these films are investigated with the objective to optimize the conditions of the 
deposition process. 
2. Experimental 
CdS nanoparticles were synthesised using polyvinyl alcohol (PVA) as a matrix. PVA 
being a good solute to multiple phase systems capable of provoding uniform gap in the 
form of array. 5 wt% solution of PVA, CdCI2 was added with various concentration (2, 
3, 4 wt%) under a high stirring rate (200 rpm) condition using magnetic stirrer. The 
constant temperature 70°C for 3 hours was maintained. The sample under preparation 
was kept for 12 hours for complete dissolution to get a transparent solution. To this 
solution 2 wt% Na2S was added till the whole solution turns into yellow colour. The 
CdS nanoparticle containing PVA were caste over precleaned glass slides to produce 
thin film form. The size of the particle is controlled by changing the pH value of the 
whole solution. The chemical reaction occurs as follows 
CdCI2 + Na2S -» CdS + 2NaCI 
pH controlled the rate of reaction due to the common ion effect At higher pH the 
solubility product increases and as a result formation of CdS particle stops. 
Structural and optical properties of CdS nanoparticles 857 
3. Results and discussion 
3.f. XRD observation : 
The XRD patterns of prepared sample were taken by Seifert XRD (3003 TT) operating 
at 40 KV-30 mA. The radiation source used was CuKa (A = 1.542 A) and a nickel 
filter was used to block K0 radiations. Figure 1 represent four different spectra of CdS 
nanoparticles with variation of pH with bulk sample (99.999% pure). 
s ; 
20 30 40 50 60 70 
Angle of diffraction (two theta) 
Figure 1. XRD traces of CdS for bulk, CdS, at pH 1.6, CdS2 at pH 1.8 and CdS3 at phi 2.0. 
The XRD pattern of CdS! contain broad peaks at 20 = 26.6 indicating the 
formation of nanostructure at pH = 1.6 and in CdS2 shows broad peaks at 20 = 26.8 
and CdS3 at 2d - 27.1 respectively at pH = 1.8 and pH = 2 
The XRD spectrum of both CdS^ CdS2 and CdS3 apparently exhibit weak and 
broad peaks, suggesting small crystallite sizes of cubic phase (JCPDS 89-0440). 
Again it is seen that when the pH increases peaks are more broadened and shifted 
to higher diffraction angle with decreasing crystal size. The increase in diffraction angle 
is clearly a result of lattice contraction which is expected to occur because of higher 
surface to volume ratio [26]. Some separate peaks are also observed which may be 
due to CdO because XRD patterns were recorded in ambient condition. The change 
of phase from hexagonal wurtzite to cubic is observed in nanocrystallite as compared 
to their bulk counterpart. The grain size of the crystallite are estimated by Sherer 
formula [27] 
Dhki « Kx/w Cos0 (1) 
w being FWHM, 0 is the Braggs angle and K m 0.89 for spherical shape (from TEM). 
For calculation w is observed by zooming the peak position using origin graphics 
CdS, 
i$ninm ii IIIMMIII MI ii < i i ^ n i 
• * • • • • i i • • 
860 
Jayanta Barman and K C Sarma 
2.5 2.6 3.0 3.1 2.7 2.8 2.9 
Band gap energy (eV) 
Figure 4. Band gap energy vs. particle size. 
and at 610 nm for CdS3. These spectra were recorded using (Thermospectronic 
AMINCO) luminance spectrometer. Emission bands redshifted from the absorption 
edge are observed in almost all of the semiconductor nanoparticles studied so far and 
are generally assigned to defect states. These redshifted emissions are usually 
associated with trapped states such as vacancies, interstitials, impurities, and surface 
defects [29]. It is seen that when the size of the nanocrystallite decreases the 
luminance is dominated by the band impurity. Also, surface passivation by sulpher has 
resulted in reduced emission intensity of this band indicating involvement of surface 
defects. 
n — • — i — » — i — i — i — i — i — i — p 
300 350 400 450 500 550 600 650 
wave length (nm) 
r 
700 750 
Figure S. PL spectrum of CdS quantum dot at same excited wavelength 300 nm. 
The nanostructure observed from TEM (model JEOL JEM-100cx) shows the 
Structural and optical properties of CdS nanoparticles 861 
nanocrystallites to be spherical in shape. The size of the crystallite decreases with 
increase of pH which agrees with the result obtained from XRD observation. 
The TEM photograph patterns Figures 6 and 7 were recorded using selected area 
observations and the particle sizes were determined in higher magnification (~2 x 105). 
The size of the particles obtained under various conditions are shown in Table 1. It is 
seen that optimum pH value for getting smaller nanoparticles is approximately 2. The 
PVA : CdCI2 ratio also affects the size of the nanoparticles. 
Figure 6. TEM image of CdS quantum dot at pH « 1.8 Figure 7. TEM photograph (zoomed view) of CdS 
quantum dot at pH = 2. 
4. Conclusions 
CdS nanoparticles of different crystallite sizes have been synthesized by the chemical 
route. The particle size is controlled by stirring rate, temperature of the solution, pH 
and time of stirring. The structural and optical characterization of the samples by XRD, 
TEM, UV-VIS spectrophotometer and PL show formation of CdS quantum dots having 
sizes between 4 and 7 nm. The optimum pH value for minimum size is found to be 
2 and PVA : CdCI2 ratio is found to 5 : 2 in our observations. 
Acknowledgment 
The authors would like to acknowledge Physics Departmen* and CIF, IITG for 
providing XRD and PL facilities. We would also like to acknowledge RSIC, NEHU, 
Shillong for TEM observations and Department of Chemistry, Gauhati University for 
spectrophotometer observation. 
References 
[11 R Banerjee, R Jayakrisnan and P Ayyub J. Physic. Condi. Matt. 12 10647 (2000) 
[2] J Nanda, K S Narayan, Beena Annie Kuruvilla, G L Murthy and D D Sarma Appl. Phys. Lett. 72 11 (1998) 
[3] L Brus Appl. Phys. A53 465 (1991) 
[4] H Gleiter Nanostruct Mat 1 1 (1992) 
[5] D Jia, Y M Wang, K T Ramesh, E Ma, Y T Zhu and R Z Valiev Appl. Phys. Lett. 79 611 (2001) 
[6] A I Efros and A L Efros Sov. Phys. Semicond. 16 772 (1982) 
862 
Jayanta Barman and KC Sarma 
[7] D Mahanta PhD Thesis University of Tezpur (2003) 
[8] S V Gaponenko Optical Properties of Semiconductor Nanocrystals (Cambridge : Cambridge Univ. 
Press) (1998) 
[9] Ulkrine Woggon Optical Properties of Semiconductor Quantum Dots, Springer Tracts in Modem Physics 
VoM36 p. 91(1996) 
[10] AD Yoffe Advancs in Physics 50 1 (2001) 
[11] Parinda Vasa, P Taneja, P Ayyub, B P Sing and R Banerjee J. Phys. Condensed. Matt. 14 281 (2002) 
[12] MV Ramakrishna and R A Frisner J. Chem. Phys. 95 8309 (1999) 
[13] Guozhong Cao Nanostructures and Nanomaterialls Synthesis, Properties and Applications (London : 
Imperial College Press) 349 (2004) 
[14] K K Nanda, S N Sarangi and S N Sahu Nano Structured Materials 10 1401 (1998) 
[15] Parinda Vasa, Pushan Ayyub and B P Sing Appl. Phys. Lett. 87 063104 (2005) 
[16] Soumitra Kar and Subhadra Chaudhuri J. Phys. Chem. B110 4542 (2006) 
[17] Y Huang, X F Duan, Q Q Wei and C M Lieber Science 291 851 (2001) 
[18] A Bachtold, P Hadley, T Nakanishi and C Dekker Science 294 1317 (2001) 
[19] M H Huang. S Mao. H Feick. H Q Yan, Y Y Wu, H Kind, E Weber. R Russo and P D Yang Science 2921897 
(2001) 
[20] Harrry E Ruda Widegap //- VI Compound for Opto-electronic Applications (Newyortc: Chapman and Hall) 
(1992) 
[21] A Parvathy Rao, G M Pajonk and A Venkateswara Rao J. Materials Synthesis and Processing 9 1064 
(2001) 
[22] P Nandakumar and C Vijayana Y V. G. S. Murti J. Appl. Phy. 91 109 (2002) 
[23] A Mews, A V Kadavanich, U Banin and A P Alivisatos Physical Review B53 242 (1996) 
[24] B Bhattacharjee, S K Bera, D Ganguli, S Chaudhuri and A K Pal Eur. Phys. J. B31 3 (2003) 
[25] K C Sarma, R K Bordoloi, M Sarma and J N Ganguli J. Instrum. Soc. India 31 216 (2001) 
[26] K K Nanda, S N Sarangi and S N Shu Nanostructured Material 10 1401 (1998) 
[27] H P Klug and L E Alexander X-Ray Diffraction Procedures for Polycrystaliine and Amorphous Materials 
(2nd ed) (New York: John Wily and Sons) p491 (1954) 
[28] Y Wang, A Suna, W Mahler and R Kasowski J. Chemical Physics 87 7315 (1987) 
[29] S N Behera, S N Sahu and K K Nanda Indian J. Phys. 74A 81 (2000) 
[30] J Nanda and O D Sarma J. Appl. Phys. 90 2504 (2001) 
[31] Sikha Tiwari and Sanjay Tiwari Crystal. Res. TechnoL 41 78 (2006)

Indian Association for the Cultivation of Science

Not a member yet

Forthcoming Publications

Notes for Contributors

Our Special Publications

Swift Ni<SUP>2+</SUP> Ion Irradiation Effects on Electrodeposited Polypyrrole for Application as Electrode in Supercapacitors

Development of LDPE/TiO<SUB>2</SUB> Composite as Substrate Material in Microwave Integrated Circuits

From Editor's Desk

Advisory Board and Editors

Solvent Dependent Raman Anisotropic Bandwidth Study in Carbonyl Containing Molecule : Role of Van Der Waals' Volume in Intermolecular Interactions

Field Effect Transistor from Dispersion Polymerized Aniline

Structural and Optical Properties of CdS Nanoparticles

6,371

8,071