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Sandia Multispectral Airborne Lidar for UAV Deployment
No full textSandia National Laboratories has initiated the development of an airborne system for W laser remote sensing measurements. System applications include the detection of effluents associated with the proliferation of weapons of mass destruction and the detection of biological weapon aerosols. This paper discusses the status of the conceptual design development and plans for both the airborne payload (pointing and tracking, laser transmitter, and telescope receiver) and the Altus unmanned aerospace vehicle platform. Hardware design constraints necessary to maintain system weight, power, and volume limitations of the flight platform are identified
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
No full textGaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device
Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers
No full textRefractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal
Direct Observations of Defect Structures in Optoelectronic Materials by Z-Contrast STEM
No full textOptoelectronic semiconductor materials have wide and important technological applications. For example, wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers, while HgCdTe II-VI semiconductors are the most promising candidates for applications as infrared detectors, or large array x-ray or r-ray detectors. In this paper, two examples are given to show that high-resolution Z-contrast imaging is an effective technique to determine the atomic structures of defects in these complex semiconductor materials
Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Final technical report
No full textTransparent conducting fluorine doped zinc oxide was deposited as thin films on soda lime glass substrates by atmospheric pressure chemical vapor deposition (CVD) at substrate temperatures of 460 to 500 degrees C. The precursors diethylzinc, tetramethylethylenediamine and benzoyl fluoride were dissolved in xylene. This solution was nebulized ultrasonically and then flash vaporized by a carrier gas of nitrogen preheated to 150 degrees C. Ethanol was vaporized separately, and these vapors were then mixed to form a homogeneous vapor mixture. Good reproducibility was achieved using this new CVD method. Uniform thicknesses were obtained by moving the heated glass substrates through the deposition zone. The best electrically and optical properties were obtained when the precursor solution was aged for more than a week before use. The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. More than 90% of the incorporated fluorine atoms were electrically active as n-type dopants. The electrical resistivity of the films was as low as 5 x 10/sup -4/ Omega cm. The mobility was about 45 cm ²/Vs. The electron concentration was up to 3 x 10 %sup20;/cm³. The optical absorption of the films was about 3-4% at a sheet resistance of 7 ohms/square. The diffuse transmittance was about 10% at a wavelength of 650 nm. Amorphous ilicon solar cells were deposited using the textured fluorine doped zinc oxide films as a front electrode. The short circuit current was increased over similar cells made with fluorine doped tin oxide, but the open circuit voltages and fill factors were reduced. The voltage was restored by overcoating the fluorine-doped zinc oxide with a thin layer of fluorine-doped tin oxide
Physical and Mathematical Description of Nuclear Weapons Identification System (NWIS) Signatures
No full textThis report describes all time and frequency analysis parameters measured with the new Nuclear Weapons Identification System (NWIS) processor with three input channels: (1) the 252Cf source ionization chamber (2) a detection channel; and (3) a second detection channel for active measurements. An intuitive and physical description of the various functions is given as well as a brief mathematical description and a brief description of how the data are acquired. If the fill five channel capability is used, the number of functions increases in number but not in type. The parameters provided by this new NWIS processor can be divided into two general classes: time analysis signatures including multiplicities and frequency analysis signatures. Data from measurements with an 18.75 kg highly enriched uranium (93.2 wt 0/0, 235U) metai casting for storage are presented to illustrate the various time and frequency analysis parameters
Polycrystal Simulations of Texture Evolution during Deformation Processing
No full textSome recent research on the hot deformation of aluminum alloys has indicated that at elevated temperatures, slip occurs on {110} systems in addition to the usual {111} systems active at lower temperatures. The effect of these additional slip systems on the texture evolution of aluminum single and polycrystals is studied using finite element simulations. The crystals are deformed in plane strain compression, and the constitutive response is modeled using crystal plasticity to track the reorientation of the crystals. By discretizing each crystal with a large number of elements, the non-uniform deformations due to local inhomogeneities and interactions with neighboring crystals are modeled. The resulting textures and microstructures are examined with regard to effect of including the additional systems, initial orientation of the single crystals, and stability of the cube orientation
Security message exchange interoperability scenarios
No full textThis contribution describes three interoperability scenarios for the ATM Security Message Exchange (SME) protocol. These scenarios include network-wide signaling support for the Security Services Information Element, partial signaling support wherethe SSIE is only supported in private or workgroup ATM networks, and the case where the SSIE is nonsupported by any network elements (exceptthosethat implement security services). Explanatory text is proposed for inclusion infection 2.3 of the ATM Security Specification, Version 1.0
Ion Microbeam Studies of Cadmium Zinc Telluride Radiation Detectors by IBICC
No full textIon Beam Induced Charge Collection (IBICC) and Time Resolved IBICC (TRIBICC) techniques were e for imaging electronic properties of Cadmium Zinc Telluride (CZT) room temperature radiation detectors. The detectors were bombarded with a scanned 5.4 MeV He microbeam and the detector response was analyzed at each point. The electron mobility (A) and Metime (z.), and charge collection efficiency maps were calculated from the data. In order to determine the radiation damage to the detectors, the signal deteriomtion was measured as the function of dose
Applications of Virtual Reality to Nuclear Safeguards
No full textThis paper explores two potential applications of Virtual Reality (VR) to international nuclear safeguards: training and information organization and navigation. The applications are represented by two existing prototype systems, one for training nuclear weapons dismantlement and one utilizing a VR model to facilitate intuitive access to related sets of information