Istituto Nazionale di Ricerca Metrologica
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Setup for the Calibration of Current Measuring Systems Under DC Signals Affected by Ripple
No full textDataset for the absolute frequency measurement of IT-Yb1 relative to IT-CsF2
No full textDataset of the comparison of the atomic clocks at INRIM between June 2021 and September 2022. Results discussed in Goti et al., Absolute frequency measurement of a Yb optical clock at the limit of the Cs fountain, Metrologia, 60, 035002 (2023).
The involved atomic clocks are the Cs fountains IT-CsF2 and the Yb optical lattice clock IT-Yb1.
Data is organized in folders. The data in the folder named 'INRIM_ITYb1-INRIM_ITCsF2-USO' is obtained making use of an optical-to-microwave chain. The data in the folder 'INRIM_ITYb1-INRIM_ITCsF2' is collected using an hydrogen maser as transfer oscillator. In the folders data is separated is one file per day. Data is reported as fractional frequency ratios in bins of 864 s. Timetags are reported in modified Julian date (MJD). A validity flag is given where 0 = invalid, valid otherwise. Each folder includes a yaml file with metadata required for generalized data processing as in [Lodewyck et al., 2020]. The Python package used for data processing can be found on github
Josephson Traveling Wave Parametric Amplifiers as Quantum Source of Entangled Photons for Microwave Quantum Radar Applications
No full textJosephson Traveling Wave Parametric Amplifiers (TWPAs) have the potential of offering quan tum limited noise and large bandwidth. These amplifiers are based on the parametric amplification of microwaves traveling through a transmission line with embedded nonlinear elements. In this paper, the design, fabrication, and characterization of the Josephson Traveling Wave Parametric Amplifier (JTWPA), based on QED devices, as a non-classical quantum source for generating signal-idler en tangled state are presented. The cryogenic and room temperature experimental results for a JTWPA will be reported. The performance comparison of the JTWPA-based Microwave Quantum Radar in terms of Range vs SNR are reported showing that a long range MQR can be obtained
Superconducting high kinetic inductance films for quantum circuits
No full textHigh-kinetic inductance disordered superconductors are gaining growing interest in the scientific community, especially for applications in the field of cQED and quantum sensing.
Thin films offer the possibility to tune the inductance by optimising the chemical composition and the crystalline properties of the film, which depend on the deposition
process. Tunable kinetic inductance values enable the exploration of a wide range of couplings between different elements in quantum circuits. Moreover, high-kinetic inductance resonators or artificial transmission lines can be exploited to achieve compact read-out devices and quantum circuits. In the framework of the DART WARS experiment, we have developed high-kinetic inductance thin NbTiN films for the microfabrication of low-noise and high dynamic range Kinetic Inductance Traveling Wave Parametric Amplifiers (KI-TWPAs). We present the optimisation of the deposition process via rf
sputtering with a Nb80%Ti20% target, in order to reach high control on the film characteristics. The parameter landscape related to the different sputtering conditions, such as pressure, power and nitrogen flow has been explored and the thickness of the film has been exploited as fine-tuning parameter to adjust the kinetic inductance and critical temperature values. Besides the microfabrication of KI-TWPA devices, the optimised NbTiN films find direct applications for the development of a wide range of quantum technologies, such as Kinetic Inductance Detectors (KIDs), high-kinetic inductance resonators and superconducting nanowires
A METHOD OF MANUFACTURING A REFERENCE MATERIAL FOR CALIBRATING A LUMINANCE MEASURING DEVICE FOR ROAD PAVEMENTS, CORRESPONDING REFERENCE MATERIAL AND CALIBRATION KIT
No full textReference Measurement Systems for the Calibration of Instrument Transformers Under Power Quality Phenomena and their Uncertainties
Get PDFEffect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Get PDFMemristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbOx-based memristive cells. For this purpose, the effect of Au, Pt, Ir, TiN, and Nb top electrodes was investigated in devices based on amorphous NbOx grown by anodic oxidation on a Nb substrate exploited also as counter electrode. It is shown that the choice of the metal electrode regulates electronic transport properties of metal-insulator interfaces, strongly influences the electroforming process, and the following resistive switching characteristics. Results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. It is shown that Pt represents the best choice for the realization of memristive cells when the NbOx thickness is reduced, making possible the realization of memristive cells characterised by low variability in operating voltages, resistance states and with low device-to-device variability. These results can provide new insights towards a rational design of redox-based memristive cells
Investigation of Superconducting Ti/Ti-Au/Au Tri-Layer Films With a Co-Sputtering Process for Transition-Edge Sensors
Get PDFThe critical temperature (Tc) of superconducting Ti/Au bilayer films is crucial for the performance of transition-edge sensors.We use a co-sputtering technique to insert a Ti-Au mixture layer as an artificial diffusion layer between a superconducting Ti film and a normal Au bilayer. The Ti-Au mixture layers have different thicknesses and component ratios. The cross-section and element information of thin films was characterized by a high resolution transmission electronmicroscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The variation of Tc is measured for a series of Ti/Ti-Au/Au films. Tc is related to both the thickness and Ti-Au ratio in the mixture layer.We attempt to model
the Tc variation based on the Usadel theory with an equivalent thickness ratio
