10,918 research outputs found
Tres discursos de D. J. M. Rivas Groot
No full textCompilación de discursos pronunciados por José María Rivas Groot, en calidad de Ministro de Instrucción Pública, publicados en la Revista de Instrucción Pública de Colombia.- Tercer contenido del “Quijote” / Discurso del Sr. José M. Rivas en nombre del Gobierno y de la Junta organizadora.
-Voto nacional / Discurso pronunciado en 1901 por el Sr. José M. Rivas Groot en la peregrinación al templo del Sagrado Corazón de Jesús.
-Discurso sobre instrucción pública / pronunciado por el Sr. José M. Rivas Groot en el Senado de 1903
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications
No full textWe report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar
Using ecological and field survey data to establish a national list of the wild bee pollinators of crops
No full textMM was funded by grant INIA-RTA2013-00139-C03-01 (MINECO and FEDER)Hutchinson, L.A., Oliver, T.H., Breeze, T.D., Bailes, E.J., Brünjes, L., Campbell, A.J., Erhardt, A., de Groot, G.A., Földesi, R., García, D., Goulson, D., Hainaut, H., Hambäck, P.A., Holzschuh, A., Jauker, F., Klatt, B.K., Klein, A.-M., Kleijn, D., Kovács-Hostyánszki, A., Krimmer, E., McKerchar, M., Miñarro, M., Phillips, B.B., Potts, S.G., Pufal, G., Radzevičiūtė, R., Roberts, S.P.M., Samnegård, U., Schulze, J., Shaw, R.F., Tscharntke, T., Vereecken, N.J., Westbury, D.B., Westphal, C., Wietzke, A., Woodcock, B.A., Garratt, M.P.D
M. Petit, M. de Benedictis, D. Britton, M. de Groot, W. Henrichsmeyer, F. Lechi. - Agricultural policy formation in the European Community : the birth of milk quotas and cap reform.
No full textM. Petit, M. de Benedictis, D. Britton, M. de Groot, W. Henrichsmeyer, F. Lechi. - Agricultural policy formation in the European Community : the birth of milk quotas and cap reform.. In: Économie rurale. N°187, 1988. pp. 73-75
M. Petit, M. de Benedictis, D. Britton, M. de Groot, W. Henrichsmeyer, F. Lechi. - Agricultural policy formation in the European Community : the birth of milk quotas and cap reform.
No full textM. Petit, M. de Benedictis, D. Britton, M. de Groot, W. Henrichsmeyer, F. Lechi. - Agricultural policy formation in the European Community : the birth of milk quotas and cap reform.. In: Économie rurale. N°187, 1988. pp. 73-75
Memoria del presidente y discurso del socio José Rivas Groot, leídos en la sesión solemne celebrada el día 21 de julio de 1901
No full textDocumento que compila las memorias del director de la Sociedad San Vicente de Paul de Bogotá para el año 1901, así como el discurso que pronunció José María Rivas Groot en calidad de socio, en el marco de la celebración de una sesión extraordinaria llevada a cabo el 21 de julio. En el documento se hace referencia a varios aspectos relacionados con la administración, finanzas y organización de la sociedad.- Memoria del presidente
- Discurso del socio D. José M. Rivas Groo
The AM Canum Venaticorum binary SDSS J173047.59+554518.5
No full textThe AM Canum Venaticorum (AM CVn) binaries are a rare group of hydrogen-deficient, ultrashort period, mass-transferring white dwarf binaries and are possible progenitors of Type Ia supernovae. We present time-resolved spectroscopy of the recently discovered AM CVn binary SDSS J173047.59+554518.5. The average spectrum shows strong double-peaked helium emission lines, as well as a variety of metal lines, including neon; this is the second detection of neon in an AM CVn binary, after the much brighter system GP Com. We detect no calcium in the accretion disc, a puzzling feature that has been noted in many of the longer period AM CVn binaries. We measure an orbital period, from the radial velocities of the emission lines, of 35.2 ± 0.2 min, confirming the ultracompact binary nature of the system. The emission lines seen in SDSS J1730 are very narrow, although double-peaked, implying a low-inclination, face-on accretion disc; using the measured velocities of the line peaks, we estimate i ≤ 11°. This low inclination makes SDSS J1730 an excellent system for the identification of emission lines
H. de Groot, Inleidinge töt de Hollandsche Recht-Geleerdheid, uitgegeven en van aateke-ningen en bijlagen voorzien door, F. Dovring, H. F. W. D. Fischer, E. M. Meijers
No full textH. de Groot, Inleidinge töt de Hollandsche Recht-Geleerdheid, uitgegeven en van aateke-ningen en bijlagen voorzien door, F. Dovring, H. F. W. D. Fischer, E. M. Meijers. In: Revue internationale de droit comparé. Vol. 6 N°4, Octobre-décembre 1954. p. 863
H. de Groot, Inleidinge töt de Hollandsche Recht-Geleerdheid, uitgegeven en van aateke-ningen en bijlagen voorzien door, F. Dovring, H. F. W. D. Fischer, E. M. Meijers
No full textH. de Groot, Inleidinge töt de Hollandsche Recht-Geleerdheid, uitgegeven en van aateke-ningen en bijlagen voorzien door, F. Dovring, H. F. W. D. Fischer, E. M. Meijers. In: Revue internationale de droit comparé. Vol. 6 N°4, Octobre-décembre 1954. p. 863
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