15,070 research outputs found
Nieuwe-Kost, Of Verandering van Spys : Handelende van Veelderhande Verschyningen Van Overleeden Menschen na hun Dood; Als mede hunne Samenspraaken, gehouden met sommige leevendige Personagiěn en bekende Familien, zo in 'sHertogenbos, Tertholen, en Andere Plaatsen, &c. &c. ; Met Figuuren / In een seer Oude Tyd beschreven en nagelaten door den Hr. Columbanus Vrancx, Licentiaat in de Godheid ...
No full textVorlageform der Veröffentlichungsangabe: Gedrukt, Voor Reekening van den Uitgeever, En zyn te bekoomen tot Amsterdam, By A. De Winter En G. De Groot, Boekverkooper
Nieuwe-Kost, Of Verandering van Spys : Handelende van Veelderhande Verschyningen Van Overleeden Menschen na hun Dood; Als mede hunne Samenspraaken, gehouden met sommige leevendige Personagiěn en bekende Familien, zo in 'sHertogenbos, Tertholen, en Andere Plaatsen, &c. &c. ; Met Figuuren
No full textTitelbl. in Rot- und SchwarzdruckVorlageform der Veröffentlichungsangabe: Gedrukt, Voor Reekening van den Uitgeever, En zyn te bekoomen tot Amsterdam, By A. De Winter En G. De Groot, BoekverkoopersIll
R. G. De Groot, Staatsangehörigkeitsrecht im Wandel
No full textR. G. De Groot, Staatsangehörigkeitsrecht im Wandel. In: Revue internationale de droit comparé. Vol. 41 N°4, Octobre-décembre 1989. p. 1069
Survey on Rules on Loss of Nationality in International Treaties and Case Law. CEPS Paper in Liberty and Security in Europe No. 57, 30 August 2013
Full text linkThis paper offers a picture of the obligations existing under international and European law in respect of the loss of nationality. It describes international instruments including obligations in this field with direct relevancy for the loss of nationality of Member States of the European Union, but also obligations regarding loss of nationality in regional non-European treaties. Attention is given to two important judicial decisions of the European Court of Justice (Janko Rottmann) and the European Court of Human Rights (Genovese v Malta) regarding nationality. Special attention is devoted to Article 15 of the Universal Declaration of Human Rights, which forbids the arbitrary deprivation of nationality. A survey is provided of possible sub-principles that can be derived from this rule. Finally, some observations are made on the burden of proof in cases of loss of nationality
Joannes de boetgezant : begrepen in zes boecken /
No full textVingerafdruk: 169604 - b1 A2 $hee : *b2 Q leA2, l. 5-6: verkoren, | voorDrukkersmerk.Another issue of the other edition Amsterdam, wed. G. de Groot, 1696.Europeana-GoogleBook
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Using ecological and field survey data to establish a national list of the wild bee pollinators of crops
Full text linkMM was funded by grant INIA-RTA2013-00139-C03-01 (MINECO and FEDER)Hutchinson, L.A., Oliver, T.H., Breeze, T.D., Bailes, E.J., Brünjes, L., Campbell, A.J., Erhardt, A., de Groot, G.A., Földesi, R., García, D., Goulson, D., Hainaut, H., Hambäck, P.A., Holzschuh, A., Jauker, F., Klatt, B.K., Klein, A.-M., Kleijn, D., Kovács-Hostyánszki, A., Krimmer, E., McKerchar, M., Miñarro, M., Phillips, B.B., Potts, S.G., Pufal, G., Radzevičiūtė, R., Roberts, S.P.M., Samnegård, U., Schulze, J., Shaw, R.F., Tscharntke, T., Vereecken, N.J., Westbury, D.B., Westphal, C., Wietzke, A., Woodcock, B.A., Garratt, M.P.D
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
Full text linkSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
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